SMD Type Product specification 2SJ606 TO-263 Unit: mm +0.1 1.27-0.1 Features MAX. (VGS = -4.0 V, ID =-42 A) Low Ciss: Ciss = 4800 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 RDS(on)2 = 23m +0.2 4.57-0.2 +0.2 2.54-0.2 +0.1 0.81-0.1 2.54 5.08 +0.2 15.25-0.2 MAX. (VGS =-10 V, ID = -42A) +0.2 8.7-0.2 RDS(on)1 =15 m +0.1 1.27-0.1 +0.2 2.54-0.2 Low on-resistance +0.2 0.4-0.2 +0.1 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V ID 83 A Drain current (DC) Drain current(pulse) * Power dissipation 300 ID PD 120 W TA=25 PD 1.5 W Channel temperature Tch 150 Tstg -55 to +150 10 A TC=25 Storage temperature * PW Unit s, duty cycle 1% http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification 2SJ606 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Symbol Testconditons IDSS VDS=-60V,VGS=0 IGSS VGS= Min 20V,VDS=0 RDS(on) Max Unit -10 A 10 VGS(off) VDS=-10V,ID=-1mA Yfs Typ VDS=-10V,ID=-42A -1.5 -2.0 38 74 -2.5 A V S VGS=-10V,ID=-42A 12 15 m VGS=-4.0V,ID=-42A 16 23 m Ciss VDS=-10V,VGS=0,f=1MHZ 4800 pF Output capacitance Coss 1200 pF Reverse transfer capacitance Crss 340 pF Turn-on delay time td(on) 13 ns Rise time Turn-off delay time Fall time 13 ns td(off) 290 ns tf 160 ns tr VGS(on)=-30V,ID=--42A ,VDD=-10V,RG=0 Total Gate Charge QG ID = -83A 120 nC Gate to Source Charge QGS VDD= -48 V 20 nC Gate to Drain Charge QGD VGS =-10 V 30 nC VF(S-D) IF = 83A, VGS = 0 V 1.1 V Reverse Recovery Time trr IF = 83 A, VGS = 0 V 60 ns Reverse Recovery Charge Qrr di/dt = 100 A / 120 nC Body Diode Forward Voltage http://www.twtysemi.com [email protected] s 4008-318-123 2 of 2