TYSEMI 2SK3634

IC
SMD Type
Product specification
2SK3634
TO-252
Features
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
High voltage: VDSS = 200 V
Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
MAX. (VGS = 10 V, ID = 3.0 A)
+0.15
0.50-0.15
RDS(on) = 0.60
30 V
+0.2
9.70-0.2
Gate voltage rating:
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
200
V
Gate to source voltage
VGSS
30
V
ID
6.0
A
Idp *
18
A
Drain current
Power dissipation
TC=25
20
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
1.0
TA=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
VDS=200V,VGS=0
Gate leakage current
IGSS
VGS= 30V,VDS=0
VGS(off)
VDS=10V,ID=1mA
2.5
Yfs
VDS=10V,ID=3.0A
2
RDS(on)
VGS=10V,ID=3.0A
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Typ
Max
10
10
3.5
4
0.47
Ciss
VDS=10V,VGS=0,f=1MHZ
4.5
Unit
A
A
V
S
0.60
270
pF
Output capacitance
Coss
75
pF
Reverse transfer capacitance
Crss
33
pF
Turn-on delay time
ton
4
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
http://www.twtysemi.com
ID=3.0A,VGS(on)=10V,RG=0 ,VDD=100V
VDD = 160V
VGS = 10 V
ID = 6.0A
[email protected]
8
ns
14
ns
6
ns
9
nC
1.5
nC
4.5
nC
4008-318-123
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