SMD Type Product specification 2SK3494 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.1 0.81-0.1 2.54 +0.2 15.25-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 +0.2 8.7-0.2 High avalanche resistance 5.60 Low on-resistance, low Qg 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 250 V Gate to source voltage VGSS 30 V Drain current Power dissipation TC=25 ID 20 A Idp * 80 A 50 PD TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.4 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=200V,VGS=0 Gate leakage current IGSS VGS= 30V,VDS=0 Gate threshold voltage Vth VDS=10V,ID=1mA 2.0 Yfs VDS=10V,ID=10A 7 RDS(on) VGS=10V,ID=10A Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss VDS=25V,VGS=0,f=1MHZ Typ Max 10 A 1 A 4.0 14 82 Unit V S 105 m 2450 pF Output capacitance Coss 356 pF Reverse transfer capacitance Crss 40 pF Turn-on delay time ton 36 ns Rise time tr Turn-off delay time toff Fall time ID=10A,VGS(on)=10V,RL=10 ,VDD=100V 20 ns 184 ns tf 29 ns Total Gate Charge QG 41 nC Gate to Source Charge QGS 8.4 nC Gate to Drain Charge QGD 14 nC http://www.twtysemi.com ID =10A, VDD =100V, VGS = 10 V [email protected] 4008-318-123 1 of 1