Transistors IC SMD Type Product specification KO3400(AO3400) SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS (V) = 30V 0.4 3 (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) 52m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = 2.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 RDS(ON) 1 0.55 28m +0.1 1.3-0.1 RDS(ON) +0.1 2.4-0.1 ID = 5.8 A (VGS = 10V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-Source Voltage Parameter VDS 30 V Gate-Source Voltage VGS Continuous Drain Current TA=25 ID Pulsed Drain Current * IDM TA=25 PD V 5.8 4.9 TA=70 Power Dissipation 12 A 30 1.4 W 1 TA=70 Thermal Resistance.Junction- to-Ambient RthJA 85 /W Thermal Resistance.Junction- to-Case Rthc 43 /W TJ, TSTG -55 to 150 Junction and Storage Temperature Range * Repetitive rating, pulse width limited by junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 1of 2 Transistors IC SMD Type Product specification KO3400(AO3400) Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Testconditons ID=250 Min RDS(ON) On state drain current ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Max 30 A, VGS=0V Unit V VDS=24V, VGS=0V 1 VDS=24V, VGS=0V ,TJ=55 5 A VDS=0V, VGS= 12V 100 0.7 nA 1.1 1.4 22.8 28 32 39 VGS=4.5V, ID=5A 27.3 33 m VGS=2.5V, ID=4A 43.3 52 m VDS=VGS ID=250 A VGS=10V, ID=5.8A Static Drain-Source On-Resistance Typ VGS=10V, ID=5.8A TJ=125 VGS=4.5V, VDS=5V 30 VDS=5V, ID=5A 10 m A 15 823 S 1050 VGS=0V, VDS=15V, f=1MHz 99 VGS=0V, VDS=0V, f=1MHz 1.4 2 9.7 12 pF pF 77 VGS=4.5V, VDS=15V, ID=5.8A V pF nC Gate Source Charge Qgs 1.6 nC Gate Drain Charge Qgd 3.1 nC Turn-On DelayTime tD(on) 3.3 5 ns Turn-On Rise Time tr 4.8 7 ns Turn-Off DelayTime tD(off) 26.3 40 ns tf 4.1 6 ns Turn-Off Fall Time VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 Body Diode Reverse Recovery Time trr IF=5A, dI/dt=100A/ s 16 20 ns Body Diode Reverse Recovery Charge Qrr IF=5A, dI/dt=100A/ s 8.9 12 nC Maximum Body-Diode Continuous Current IS 2.5 A Pulsed Body-Diode Current * ISM Diode Forward Voltage VSD IS=1A,VGS=0V 0.71 30 A 1 V * Repetitive rating, pulse width limited by junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2