MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3419(AO3419) SOT-23 Features VDS (V) = -20V RDS(ON) 95m (VGS = -4.5V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -2.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 145m 1 0.55 (VGS = -10V) +0.1 1.3-0.1 75m +0.1 2.4-0.1 RDS(ON) 0.4 3 ID = -3.5 A RDS(ON) Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS Continuous Drain Current *1 TA=25 ID -2.8 TA=70 Pulsed Drain Current *2 Power Dissipation *1 TA=25 IDM PD Thermal Resistance.Junction-to-Case Junction and Storage Temperature Range *1The value of R JA V A -15 1.4 W 0.9 TA=70 Thermal Resistance.Junction-to-Ambient 12 -3.5 R JA R JC TJ, TSTG 125 /W 60 /W -55 to 150 is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. www.kexin.com.cn 1 IC MOSFET SMD Type KO3419(AO3419) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Testconditons ID=250 Min RDS(ON) -20 A, VGS=0V VDS=-16V, VGS=0V ,TJ=55 -2.5 A VDS=0V, VGS= 10V VDS=VGS ID=-250 1 -0.7 A VGS=-10V, ID=-3.5A TJ=125 VGS=-2.5V, ID=-1A Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=-4.5V, VDS=-5V -0.9 -1.4 59 75 83 105 76 95 111 145 -15 VDS=-5V, ID=-3.5A 512 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=- =-10V, ID=-3.5A V m A 6.8 VGS=0V, VDS=-10V, f=1MHz A S 620 pF 77 pF 62 pF 9.2 13 5.5 6.6 nC 0.8 nC Gate Drain Charge Qgd 1.9 nC Turn-On DelayTime tD(on) 5 ns Turn-On Rise Time tr 6.7 ns VGS=-10V, VDS=-10V, RL=2.8 ,RGEN=3 Turn-0ff DelayTime tD(off) 28 ns Turn-Off Fall Time tf 13.5 ns Body Diode Reverse Recovery Time trr IF=-3.5A, dI/dt=100A/µs 9.8 Body Diode Reverse Recovery Charge Qrr IF=-3.5A, dI/dt=100A/µs 2.7 Maximum Body-Diode Continuous Current IS Diode Forward Voltage 2 ID(ON) Unit V -0.5 VGS=-4.5V, ID=-3A On state drain current Max VDS=-16V, VGS=0V VGS=-10V, ID=-3.5A Static Drain-Source On-Resistance Typ www.kexin.com.cn VSD IS=-1A,VGS=0V -0.65 -0.81 12 ns nC -2 A -0.95 V