KEXIN KO3419

MOSFET
IC
SMD Type
P-Channel Enhancement Mode
Field Effect Transistor
KO3419(AO3419)
SOT-23
Features
VDS (V) = -20V
RDS(ON)
95m
(VGS = -4.5V)
2
+0.1
0.95-0.1
+0.1
1.9-0.1
(VGS = -2.5V)
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
145m
1
0.55
(VGS = -10V)
+0.1
1.3-0.1
75m
+0.1
2.4-0.1
RDS(ON)
0.4
3
ID = -3.5 A
RDS(ON)
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
Continuous Drain
Current *1
TA=25
ID
-2.8
TA=70
Pulsed Drain Current *2
Power Dissipation *1
TA=25
IDM
PD
Thermal Resistance.Junction-to-Case
Junction and Storage Temperature Range
*1The value of R
JA
V
A
-15
1.4
W
0.9
TA=70
Thermal Resistance.Junction-to-Ambient
12
-3.5
R
JA
R
JC
TJ, TSTG
125
/W
60
/W
-55 to 150
is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 Repetitive rating, pulse width limited by junction temperature.
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1
IC
MOSFET
SMD Type
KO3419(AO3419)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
Testconditons
ID=250
Min
RDS(ON)
-20
A, VGS=0V
VDS=-16V, VGS=0V ,TJ=55
-2.5
A
VDS=0V, VGS=
10V
VDS=VGS ID=-250
1
-0.7
A
VGS=-10V, ID=-3.5A
TJ=125
VGS=-2.5V, ID=-1A
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
VGS=-4.5V, VDS=-5V
-0.9
-1.4
59
75
83
105
76
95
111
145
-15
VDS=-5V, ID=-3.5A
512
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=- =-10V, ID=-3.5A
V
m
A
6.8
VGS=0V, VDS=-10V, f=1MHz
A
S
620
pF
77
pF
62
pF
9.2
13
5.5
6.6
nC
0.8
nC
Gate Drain Charge
Qgd
1.9
nC
Turn-On DelayTime
tD(on)
5
ns
Turn-On Rise Time
tr
6.7
ns
VGS=-10V, VDS=-10V, RL=2.8
,RGEN=3
Turn-0ff DelayTime
tD(off)
28
ns
Turn-Off Fall Time
tf
13.5
ns
Body Diode Reverse Recovery Time
trr
IF=-3.5A, dI/dt=100A/µs
9.8
Body Diode Reverse Recovery Charge
Qrr
IF=-3.5A, dI/dt=100A/µs
2.7
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
2
ID(ON)
Unit
V
-0.5
VGS=-4.5V, ID=-3A
On state drain current
Max
VDS=-16V, VGS=0V
VGS=-10V, ID=-3.5A
Static Drain-Source On-Resistance
Typ
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VSD
IS=-1A,VGS=0V
-0.65
-0.81
12
ns
nC
-2
A
-0.95
V