TYSEMI SI8822

IC
IC
SMD Type
Product specification
SI8822
TSSOP-8
■ Features
Unit: mm
● VDS (V) = 20V
● ID = 7A (VGS=10V)
● RDS(ON) < 21mΩ (VGS = 10V)
● RDS(ON) < 24mΩ (VGS = 4.5V)
● RDS(ON) < 32mΩ (VGS = 2.5V)
● RDS(ON) < 50mΩ (VGS = 1.8V)
D1
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G1
D2
G2
S1
S2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current *1
TA=25℃
7
ID
5.7
TA=70℃
Pulsed Drain Current *2
Power Dissipation *1
IDM
TA=25℃
A
30
1.5
PD
W
0.96
TA=70℃
Maximum Junction-to-Ambient *1
t ≤ 10s
Maximum Junction-to-Ambient *1
Steady-State
Junction and Storage Temperature Range
83
RθJA
℃/W
130
TJ, TSTG
-55 to 150
℃
2
*1The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz.
Copper, in a still air environment with TA =25℃
*2 Repetitive rating, pulse width limited by junction temperature.
http://www.twtysemi.com
[email protected]
4008-318-123
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IC
IC
MOSFET
SMD Type
Product specification
SI8822
■ Electrical Characteristics Ta = 25℃
Parameter
Test conditons
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
Min
ID=250μA, VGS=0V
1
VDS=16V, VGS=0V ,TJ=55℃
5
IGSS
VDS=0V, VGS=±10V
VDS=VGS ID=250μA
0.5
On state drain current
ID(ON)
VGS=4.5V, VDS=5V
30
VGS=10V, ID=7A
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
0.8
nA
1
V
A
16.5
21
23
28
19
24
VGS=2.5V, ID=5.5A
25
32
VGS=1.8V, ID=2A
36
50
TJ=125℃
VDS=5V, ID=7A
μA
±100
VGS=4.5V, ID=6.6A
VGS=4.5V, ID=7A
Unit
V
VDS=16V, VGS=0V
VGS(th)
RDS(ON)
Max
20
Gate Threshold Voltage
Static Drain-Source On-Resistance
Typ
24
mΩ
S
630
VGS=0V, VDS=10V, f=1MHz
pF
164
137
VGS=0V, VDS=0V, f=1MHz
1.5
Ω
9.3
VGS=4.5V, VDS= =10V, ID=7A
nC
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
3.6
Turn-On DelayTime
tD(on)
5.7
ns
11.5
ns
31.5
ns
9.7
ns
Turn-On Rise Time
tr
Turn-Off DelayTime
tD(off)
Turn-Off FallTime
0.6
VGS=5V, VDS=10V, RL=1.4Ω,RGEN=3Ω
tf
Body Diode Reverse Recovery Time
trr
IF=7A, dI/dt=100A/μs
15.2
ns
Body Diode Reverse Recovery Charge
Qrr
IF=7A, dI/dt=100A/μs
6.3
nC
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
VSD
IS=1A,VGS=0V
0.7
2.5
A
1
V
■ Marking
Marking
8822
http://www.twtysemi.com
[email protected]
4008-318-123
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