TYSEMI HR1A4A

SMD Type
Product specification
HR1A4A
Features
Up to 2A High Current Drives Such As IC Outputs and
Actuators Available
On-chip Bias Resistor
Low Power Consumption During Drive
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-10
V
Collector Current (DC)
IC(DC)
-1.0
A
Collector Current (Pulse)
IC(pulse) *1
-2.0
A
Base Current (DC)
IB(DC)
-0.02
A
Total Power Dissipation
PT *2
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 PW
10ms, Duty Cycle 50%
*2 When 0.7mm x 16cm2 ceramic board is used.
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector Cut-off Current
ICBO
DC Current Gain
hFE *
Collector Saturation Voltage
Low Level Input Voltage
Min
VCE = -2.0V , IC = -0.1A
150
VCE = -2.0V , IC = -0.5A
100
VCE = -2.0V , IC = -1.0A
50
VCE(sat) * IC = -500mA, IB = -10mA
VIL *
Input Resistance
R1
Emitter-Base Resistance
R2
* PW
Testconditons
Typ
VCB = -60V, IE = 0
VCE = -5.0V, IC = -100 A
0.20
-0.3
7
10
Max
Unit
-100
nA
0.35
V
-1.5
V
13
k
350 s, Duty Cycle 2%
http://www.twtysemi.com
[email protected]
4008-318-123
1of 3
SMD Type
Product specification
HR1A4A
Marking
Marking
MX
Equivalent Circuit
Electrical Characteristics Curves
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 3
SMD Type
Product specification
HR1A4A
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 3