Transistors SMD Type NPN Transistors 2SD1005 1.70 Features 0.1 World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. 0.42 0.1 Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA). 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Collector current (pulse) * IC 1.5 A PT 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Total power dissipation ambient temperature * at 25 *1. PW 10ms,duty cycle 50% *2. When mounted on ceramic substrate of 16cm2 X 0.7mm Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 100 Collector- emitter breakdown voltage VCEO Ic=1 mA， IB= 0 80 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 0.5 Collector-emitter saturation voltage * VCE(sat) IC=500 mA, IB=50mA Base - emitter saturation voltage * V 5 VBE(sat) IC=500 mA, IB=50mA Base - emitter voltage * VBE VCE= 10V, IC= 10mA 0.6 DC current gain hFE VCE= 2V, IC= 100mA 90 200 VCE= 2V, IC= 500mA 45 200 * Collector output capacitance Cob Transition frequency *. PW fT 350us,duty cycle hFE Classification(1) Unit 1.5 uA V 0.7 400 VCB= 10V, IE=0,f=1MHz 12 pF VCE= 5 V, IE =-10mA 160 MHz 2% Type 2SD1005-W 2SD1005-V 2SD1005-U Range 90-180 135-270 200-400 Marking BW BV BU www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1005 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SD1005 ■ Typical Characterisitics www.kexin.com.cn 3