Transistors IC SMD Type Product specification FMMT417 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 320 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6 V Peak collector current ICM 60 A Collector current IC 500 mA Power dissipation Ptot 330 mW Tj,Tstg -55 to +150 Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA 320 V Collector-emitter breakdown voltage * V(BR)CEO IC=100ìA 100 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA 6 V 0.1 ìA VCB=80V, Tamb=100 10 ìA VEB=4V 0.1 ìA Collector-emitter saturation voltage * VCE(sat) IC=10mA,IB=1mA 0.5 V Base-emitter saturation voltage * VBE(sat) IC=10mA,IB=1mA 0.9 V Collector cutoff current ICBO Emitter cut-off current IEBO Current in second breakdown ISB Static Forward Current Transfer Ratio Transition frequency hFE fT Collector-base capacitance * Pulse test: tp = 300 ìs; d Ccb VCB=80V VC=200V, CCE=620pF 15 A VC=250V, CCE=620pF 25 A IC=10mA,VCE=10V * 25 IC=10mA,VCE=20V,f=20MHz 40 MHz 8 VCB=20V, IE=0, f=1MHz pF 0.02. Marking Marking 417 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1