Transistors SMD Type High Voltage High Performance Transistor FMMT497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 NPN silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Peak collector current ICM 1 A IB 200 mA Ptot 500 mW Tj,Tstg -55 to +150 Base current Power dissipation Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 300 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 300 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector cutoff current 100 nA ICBO VCB=250V Collector Cut-Off Current ICES VCE=250V 100 nA Emitter cut-off current IEBO VEB=4V 100 nA Collector-emitter saturation voltage * VCE(sat) IC=100mA,IB=10mA IC=250mA,IB=25mA 0.2 0.3 V Base-emitter saturation voltage * VBE(sat) IC=250mA,IB=25mA 1.0 V Base-emitter voltage * VBE(ON) IC=250mA,VCE=10V 1.0 V Static Forward Current Transfer Ratio Transition Frequency hFE fT Collector-Base Breakdown Voltage * Pulse test: tp = 300 ìs; d Cobo IC=1mA, VCE=10V 100 IC=100mA, VCE=10V* 80 IC=250mA, VCE=10V* 20 IC=50mA,VCE=10V,f=100MHz 75 VCB=10V,f=1MHz 300 MHz 5 pF 0.02. Marking Marking 497 www.kexin.com.cn 1