Transistors SMD Type Product specification FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE(sat) at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -12 V Collector current IC -800 mA Peak collector current ICM -5 A Ptot 625 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1of 2 Transistors SMD Type Product specification FMMT734 Electrical Characteristics Ta = 25 Min Typ Collector-base breakdown voltage Parameter V(BR)CBO IC=-100ìA Symbol Testconditons -100 -130 V Collector-emitter breakdown voltage * V(BR)CEO IC=-5mA -100 -116 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -12 -17 Collector cutoff current ICBO Collector cutoff current ICEO Emitter cut-off current IEBO VEB=-7V Collector-emitter saturation voltage * VCE(sat) Max Unit V VCB=-80V -10 nA VCE=-80V -200 nA -10 nA IC=-100mA, IB=-1mA -0.68 -0.75 V IC=-250mA, IB=-1mA -0.72 -0.80 V IC=-500mA, IB=-5mA -0.78 -0.86 V IC=-800mA, IB=-5mA -0.86 -0.97 V IC=-800mA, IB=-5mA -0.72 V IC=-1A, IB=-5mA -0.90 -1.05 V Base-emitter saturation voltage * VBE(sat) IC=-1A,IB=-5mA -1.6 -1.75 V Base-Emitter Turn-On Voltage * VBE(ON) IC=-1A,VCE=-5V -1.3 -1.75 V 60K IC=-10mA, VCE=-5V Static Forward Current Transfer Ratio* hFE IC=-100mA, VCE=-5V 20K 60K IC=-1A, VCE=-5V 15K 50K IC=-2A, VCE=-5V 5K 15K IC=-5A, VCE=-5V 150 IC=-1A, VCE=-2V 20K Transition Frequency fT IC=-10mA,VCE=-10V,f=100MHz 140 Output Capacitance Cobo VCB=-10V,f=1MHz 14 Turn-On Time ton IC=-500mA, VCC=-20V 460 ns Turn-Off Time toff IB= 1mA 1200 ns * Pulse test: tp = 300 ìs; d MHz 25 pF 0.02. Marking Marking 734 http://www.twtysemi.com [email protected] 4008-318-123 2of 2