Transistors Diodes IC Transistor T SMD Type Product specification KTC4377 SOT-89 ■ Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 2 2.60±0.1 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-Emitter voltage VCEO 10 V Emitter-base voltage VEBO 6 V Collector Current IC 2 A Collector Power Dissipation PC 500 mW Junction Temperature Tj 150 ℃ Tstg -55 to 150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 30 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 10 V Emitter-Base Breakdown Voltage 6 V(BR)EBO IE=1mA, IC=0 Collector Cut-off Current ICBO VCB=30V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 100 nA DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Transition frequency fT Collector Output Capacitance VCE=1V, IC=500mA 140 VCE=1V, IC=2A 70 V 600 140 IC=2A, IB=50mA 0.5 VCE=1V, IC=2A Cob 1.5 V V VCE=1V, IC=500mA 150 MHz VCB=10V, IE=0, f=1MHz 27 pF ■ hFE Classification Marking SA SB SC SD Rank A B C D hFE 140～240 200～330 300～450 420～600 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1