VISHAY VBT1045CBP-E3-4W

New Product
VBT1045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.34 V at IF = 2.5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C
• Not recommended for PCB bottom side wave mounting
2
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
1
VBT1045CBP
PIN 1
PIN 2
TYPICAL APPLICATIONS
K
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
45 V
IFSM
100 A
VF at IF = 5.0 A
0.41 V
TOP max.
150 °C
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h
SYMBOL
VBT1045CBP
UNIT
VRRM
45
V
IF(AV) (1)
10
A
5
IFSM
100
A
TOP, TSTG
- 40 to + 150
°C
TJ (2)
≤ 200
°C
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Document Number: 89371
Revision: 27-Oct-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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New Product
VBT1045CBP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 2.5 A
TA = 25 °C
IF = 5.0 A
Instantaneous forward voltage per diode
VF (1)
IF = 2.5 A
TA = 25 °C
VR = 45 V
TYP.
MAX.
0.44
-
0.49
0.58
0.34
-
0.41
0.50
-
500
μA
5
15
mA
IR (2)
TA = 125 °C
UNIT
V
TA = 125 °C
IF = 5.0 A
Reverse current per diode
SYMBOL
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT1045CBP
UNIT
3.5
per diode
Typical thermal resistance
°C/W
RθJC
per device
2.5
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VBT1045CBP-E3/4W
1.38
4W
50/tube
Tube
TO-263AB
VBT1045CBP-E3/8W
1.38
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
4.0
D = 0.5
3.5
10
Average Power Loss (W)
Average Forward Rectified Current (A)
12
8
6
4
2
0
100
D = 0.8
D = 0.3
3.0
D = 0.2
2.5
D = 1.0
2.0
D = 0.1
1.5
T
1.0
0.5
D = tp/T
tp
4
5
0
110
120
130
140
150
0
1
2
3
6
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89371
Revision: 27-Oct-10
New Product
VBT1045CBP
Vishay General Semiconductor
10 000
TA = 150 °C
10
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.1
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Current (mA)
10
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
40
60
80
1
0.1
0.01
0.001
20
Junction to Case
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
Document Number: 89371
Revision: 27-Oct-10
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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