IRF IRF3711STRL

PD- 94062D
IRF3711
IRF3711S
IRF3711L
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
20V
6.0mΩ
110A†
TO-220AB
IRF3711
D2Pak
IRF3711S
TO-262
IRF3711L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation…
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 20
110†
69
440
120
3.1
0.96
-55 to + 150
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Typ.
Max.
Junction-to-Case ‡
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„‡
Junction-to-Ambient (PCB mount)…‡
–––
0.50
–––
–––
1.04
–––
62
40
Units
°C/W
Notes  through ‡ are on page 11
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1
12/9/04
IRF3711/3711S/3711L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.022
4.7
6.2
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, I D = 250µA
––– V/°C Reference to 25°C, ID = 1mA
6.0
VGS = 10V, ID = 15A ƒ
mΩ
8.5
VGS = 4.5V, ID = 12A ƒ
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
100
VDS = 16V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
53
–––
–––
–––
–––
0.3
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
29
7.3
8.9
33
–––
12
220
17
12
2980
1770
280
Max. Units
Conditions
–––
S
VDS = 16V, ID = 30A
44
ID = 15A
–––
nC
VDS = 10V
–––
VGS = 4.5V
–––
VGS = 0V, VDS = 10V
2.5
Ω
–––
VDD = 10V
ns
–––
ID = 30A
–––
RG = 1.8Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
pF
VDS = 10V
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
460
30
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
––– 110†
–––
–––
440
––– 0.88
––– 0.82
––– 50
––– 61
––– 48
––– 65
1.3
–––
75
92
72
98
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 30A, V GS = 0V ƒ
TJ = 125°C, IS = 30A, VGS = 0V ƒ
TJ = 25°C, IF = 16A, VR=10V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 16A, VR=10V
di/dt = 100A/µs ƒ
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IRF3711/3711S/3711L
1000
1000
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
2.7V
100
2.7V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
10
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
100
V DS = 25V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
3.0
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
2.0
20µs PULSE WIDTH
TJ = 150 ° C
8.0
ID = 110A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF3711/3711S/3711L
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
1000
Crss
14
VGS , Gate-to-Source Voltage (V)
100000
ID = 30A
VDS = 16V
VDS = 10V
12
10
8
6
4
2
100
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
100
0
VDS, Drain-to-Source Voltage (V)
0
20
40
60
80
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
1000
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.6
100
100µsec
1msec
10
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF3711/3711S/3711L
120
V DS
LIMITED BY PACKAGE
VGS
100
D.U.T.
RG
ID , Drain Current (A)
RD
+
-VDD
80
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
Fig 10a. Switching Time Test Circuit
40
VDS
20
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF3711/3711S/3711L
EAS , Single Pulse Avalanche Energy (mJ)
1400
15V
TOP
1200
L
VDS
DRIVER
BOTTOM
ID
13A
19A
30A
1000
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF3711/3711S/3711L
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRF3711/3711S/3711L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T HE AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
RE CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
8
PAR T NUMB E R
DAT E CODE
YEAR 7 = 1997
WE E K 19
L INE C
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IRF3711/3711S/3711L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IR F530S WIT H
L OT CODE 8024
AS S EMB L ED ON WW 02, 2000
IN T HE AS S EMB LY LINE "L "
INT ERNAT IONAL
R ECT IFIER
LOGO
Note: "P" in ass embly line
pos ition indicates "Lead-F ree"
PART NUMB E R
F530S
AS S E MBL Y
L OT CODE
DAT E CODE
YEAR 0 = 2000
WEE K 02
L INE L
OR
INT E RNAT IONAL
RE CT IF IE R
LOGO
AS S E MB LY
LOT CODE
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PART NUMBE R
F 530S
DAT E CODE
P = DE S IGNAT E S LE AD-F RE E
PRODUCT (OPT IONAL)
YE AR 0 = 2000
WEE K 02
A = AS SE MBLY S IT E CODE
9
IRF3711/3711S/3711L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMPL E : T HIS IS AN IRL 3103L
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T HE AS S E MB L Y L INE "C"
Note: "P" in as s embly line
pos ition indicates "L ead-F ree"
INT E RNAT IONAL
RE CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PART NUMB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
OR
INT E RNAT IONAL
RE CT IF IER
L OGO
AS S E MB L Y
L OT CODE
10
PART NUMB E R
DAT E CODE
P = DE S IGNAT E S L E AD-F REE
PRODUCT (OPT IONAL)
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
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IRF3711/3711S/3711L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
Notes:
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
 Repetitive rating; pulse width limited by
max. junction temperature.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ This is only applied to TO-220AB package
‚ Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 30A.
… This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Rθ is measured at TJ approximately 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
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11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/