ONSEMI NJD1718T4G

NJD1718T4G
Power Transistors
PNP Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier and power switching
applications.
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Features
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.5 Vdc (Max) @ IC = −1 A
• High Switching Speed: tSTG = 320 ns (typ)
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
•
Machine Model, C u 400 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCB
−50
Vdc
VCEO
−50
Vdc
VEB
−5
Vdc
IC
−2
−3
Adc
Base Current
IB
−0.4
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
15
0.1
W
W/°C
Total Device Dissipation @ TA = 25°C*
Derate above 25°C
PD
1.68
0.011
W
W/°C
TJ, Tstg
−65 to +150
°C
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1 2
3
A
Y
WW
G
DPAK
CASE 369C
STYLE 1
AYWW
J
1718G
= Assembly Location
= Year
= Work Week
= Pb−Free Device
ORDERING INFORMATION
Device
NJD1718T4G
Package
Shipping†
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction−to−Case
Junction−to−Ambient*
RqJC
RqJA
10
89.3
°C/W
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 2
1
Publication Order Number:
NJD1718/D
NJD1718T4G
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
BVCEO
Typ
Max
Unit
−50
−
Vdc
−
−100
−
−100
70
40
240
−
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = −10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
ICBO
Emitter Cutoff Current (VBE = −5 Vdc, IC = 0)
IEBO
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = −0.5 A, VCE = 2 V)
(IC = −1.5 Adc, VCE = 2 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 1)
(IC = −1 A, IB = −0.05 A)
VCE(sat)
Base−Emitter Saturation Voltage (Note 1)
(IC = −1 A, IB = −0.05 Adc)
VBE(sat)
Base−Emitter On Voltage (Note 1)
(IC = −1 Adc, VCE = −2 Vdc)
VBE(on)
−
Vdc
−
−0.2
−0.5
−
−
−1.2
−
−
−1.2
fT
−
80
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
−
33
−
pF
Switching Timers
VCC = −30 V, IC = −1 A
IB = −50 mA, RB = 200 W
tON
−
55
−
ns
tSTG
−
320
−
tf
−
40
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = −500 mAdc, VCE = −2 Vdc, ftest = 10 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
2. fT = ⎪hfe⎪• ftest.
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2
NJD1718T4G
TYPICAL CHARACTERISTICS
300
hFE, DC CURRENT GAIN
VCE = 2.0 V
150°C
200
25°C
100
−55°C
0
0.001
0.01
0.1
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1.2
IC/IB = 20
0.8
150°C
0.6
0.4
25°C
0.2
0
0.001
10
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
IC/IB = 20
1.20
1.00
−55°C
0.80
25°C
0.60
150°C
0.40
0.20
0.001
0.01
0.1
1
10
C, CAPACITANCE (pF)
1.20
1.10
10
VCE = 2.0 V
1.00
0.90
−55°C
0.80
25°C
0.70
0.60
150°C
0.50
0.40
0.30
0.20
0.001
IC, COLLECTOR CURRENT (A)
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. Base−Emitter Saturation Voltage
Figure 4. Base−Emitter Voltage
10
100
1000
TA = 25°C
Cib
100
Cob
10
1
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector−Emitter Saturation Voltage
0.1
1
10
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
Figure 1. DC Current Gain
1.40
−55°C
1
100
VCE = 2.0 V
TA = 25°C
10
0.001
0.01
0.1
1
VR, REVERSE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 5. Capacitance
Figure 6. Current−Gain−Bandwidth Product
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3
10
NJD1718T4G
TYPICAL CHARACTERISTICS
16
PD, POWER DISSIPATION (W)
IC, COLLECTOR CURRENT (A)
10
100 ms
1.0 ms
1
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.1
1.0 s
10 ms
1
10
6
4
2
0
100
0
20
40
80
60
100
120
Figure 8. Power Derating
0.3
0.2
0.1
0.01
0.02
8
TA, AMBIENT TEMPERATURE (°C)
0.2
0.02
10
Figure 7. State Operating Area
D = 0.5
0.03
12
VCE, COLLECTOR EMITTER VOLTAGE (V)
1
0.7
0.5
0.1
0.07
0.05
14
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.02
0.01
0.1
0.2
0.5
1
2
t, TIME (ms)
5
Figure 9. Thermal Response
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4
10
160
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0 (SINGLE PULSE)
0.05
140
20
50
100
200
NJD1718T4G
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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5
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For additional information, please contact your local
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NJD1718/D