NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area • High VCE; High Current Gain • These are Pb−Free Devices DARLINGTON POWER TRANSISTORS 4 AMPERES 350 VOLTS 45 WATTS Benefits • Reliable Performance at Higher Powers • Designed for Inductive Loads • Very Low Current Requirements Applications • • • • • MARKING DIAGRAM Internal Combustion Engine Ignition Control Switching Regulators Motor Controls Light Ballast Photo Flash 4 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 350 Vdc Collector−Base Breakdown Voltage VCBO 700 Vdc Collector−Emitter Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 5.0 Vdc IC ICM 4.0 8.0 Adc Base Current IB 0.5 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 45 0.36 W W/°C TJ, Tstg −65 to +150 °C Collector Current Continuous Peak Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DPAK CASE 369C STYLE 1 YWW NJD 35N04G Y = Year WW = Work Week NJD35N04 = Device Code G = Pb−Free Device ORDERING INFORMATION Package Shipping† NJD35N04G DPAK (Pb−Free) 75 Units / Rail NJD35N04T4G DPAK (Pb−Free) 2500/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Case Junction−to−Ambient © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 2 Symbol Value Unit RqJC RqJA 2.78 71.4 °C/W 1 Publication Order Number: NJD35N04/D NJD35N04G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 350 − − Vdc Collector Cutoff Current (VCE = 500 V) (IB = 0) (VCE = 500 V, TC = 125°C) ICES − − − − 50 250 mAdc Collector Cutoff Current (VCE = 350 V) (IB = 0) (VCE = 300 V, TC = 125°C) ICEO − − − − 50 250 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO − − 5.0 mAdc Collector−Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125°C) VCE(sat) − − 1.5 Vdc Base−Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125°C) VBE(sat) − − 2.0 Vdc Base−Emitter On Voltage (IC = 2.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V 125°C) VBE(on) − − 2.0 Vdc 2000 300 − − fT 90 − − MHz Cob − 60 − pF ts tf − − 18 0.8 − − mSec OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mA, L = 10 mH) ON CHARACTERISTICS DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 Vdc) hFE − − − DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 2.0 A, VCE = 10 V, f = 1.0 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS VCC = 12 V, Vclamp = 250 V, L = 4 mH IC = 2 A, IB1 = 20 mA, IB2 = −20 mA C B E 2 KW Figure 1. Darlington Circuit Schematic http://onsemi.com 2 NJD35N04G TYPICAL CHARACTERISTICS 10,000 45 hFE, DC CURRENT GAIN 40 35 30 TC 25 20 15 10 1000 25°C 100 VCE = 2 V 5.0 0 10 10 30 50 70 90 110 130 150 170 Figure 3. DC Current Gain Ic/Ib = 100 2.5 2.0 1.5 0.5 0 25°C 125°C 0.1 10 Figure 2. Power Derating 3.0 1.0 1.0 IC, COLLECTOR CURRENT (AMPS) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 3.5 0.1 T, TEMPERATURE (°C) 4.0 VBE(on), BASE−EMITTER VOLTAGE (V) 125°C 1.0 10 2.4 2.0 1.6 25°C 1.2 125°C 0.8 0.4 0 Ic/Ib = 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. Collector−Emitter Saturation Voltage Figure 5. Base−Emitter Saturation Voltage 2.0 10 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 50 1.6 25°C 1.2 0.8 125°C VCE = 2 V 0.4 0.1 1.0 10 10 mS DC 1.0 1 mS 300 mS 100 mS 0.1 0.01 10 100 1000 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 6. Base−Emitter Voltage Figure 7. Forward Bias Safe Operating Area (FBSOA) http://onsemi.com 3 NJD35N04G PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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