HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 • Silicon Epitaxial NPN Transistor • High Speed, Low Saturation Switch • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IB IC ICM PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Base Current Continuous Collector Current Peak Repetitive Collector Current TA = 25°C Total Power Dissipation at TC = 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 120V 60V 6V 1.0A 2A 5A 870mW 5W 200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Unit RθJA Thermal Resistance, Junction To Ambient 200 °C/W RθJC Thermal Resistance, Junction To Case 35 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5569 Issue 2 Page 1 of 3 HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage IC = 5mA VBE = 0 120 IC = 10mA IB = 0 60 Emitter - Base Voltage IE = 1.0mA IC = 0 6 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 5A IB = 0.5A ICES Collector Cut-Off Current VCE = 60V IEBO Emitter Cut-Off Current VEB = 4V (1) V(BR)CBO V(BR)CEO (1) VEBO VCE(sat) (1) VBE(sat) (1) hFE (1) DC Current Gain Min. Typ. Max. Unit V 0.4 1.0 1.3 1.6 VBE = 0 0.02 10 IC = 0 0.05 10 IC = 1.0A VCE = 2V 100 IC = 1.5A VCE = 0.6V 75 IC = 2A VCE = 2V 40 80 70 100 µA 150 DYNAMIC CHARACTERISTICS IC = 0.5A VCE = 5V fT Transition Frequency Cobo Output Capacitance VCB = 10V f = 1.0MHz 40 100 Cibo Input Capacitance VEB = 0.5V f = 1.0MHz 300 500 ton Turn on Time VCC = 20V IC = 0.5A toff Turn off Time IB1= -IB2 = 50mA MHz f = 20MHz pF 0.6 µS 1.2 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5569 Issue 2 Page 2 of 3 HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO39 (TO-205AD) METAL PACKAGE Underside View PIN 1 - Emitter PIN 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] PIN 3 - Collector Website: http://www.semelab-tt.com Document Number 5569 Issue 2 Page 3 of 3