SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PT Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current Total Power Dissipation at TC = 25°C De-rate Above TC = 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 100V 80V 6.0V 4.0A 2.0A 25W 143mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Unit 7.0 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9157 Issue 1 Page 1 of 2 SILICON NPN TRANSISTOR 2N3767 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = 100mA ICEO Collector-Emitter Breakdown Voltage Collector-Emitter Cut off Current IEBO Emitter-Base Cut-Off Current VEB = 6.0V IC = 0 500 VCE = 100V VBE = -1.5V 10 ICEX Collector-Emitter Cut-Off Current VCE = 70V VBE = -1.5V (1) V(BR)CEO Min. IB = 0 Typ. Max. 80 V VCE = 80V 500 TA = 150°C ICBO (1) VBE hFE (1) (1) VBE(sat) (1) µA 1.0 mA Collector-Base Cut-Off Current VCB = 100V IE = 0 10 µA Base-Emitter Voltage VCE = 10V IC = 1.0A 1.5 V IC = 50mA VCE = 5V 30 IC = 500mA VCE = 5V 40 TA = -55°C 13 IC = 1.0A VCE = 10V 20 IC = 500mA IB = 50mA 1.0 IC = 1.0A IB = 100mA 2.5 IC = 1.0A IB = 100mA 1.5 IC = 500mA VCE = 10V DC Current Gain VCE(sat) Unit Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 160 V DYNAMIC CHARACTERISTICS |hfe| Magnitude of Small-Signal Short-Circuit Current Gain Cobo Output Capacitance ton Turn On Time VCC = 30V IC = 500mA 0.25 toff Turn Off Time IB1 = 50mA IB2 = - IB1 2.5 1.0 8.0 f = 10MHz VCB = 10V IE = 0 50 f = 1.0MHz Notes (1) Pulse Width ≤ 300us, δ ≤ 2% pF µs 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. MECHANICAL DATA 11.94 (0.470) 12.70 (0.500) 2 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Dimensions in mm (inches) TO66 (TO-213AA) METAL PACKAGE Underside View PIN 1 - Base PIN 2 - Emitter Case - Collector 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] 9.14 (0.360) min. Website: http://www.semelab-tt.com Document Number 9157 Issue 1 Page 2 of 2