SILICON NPN TRANSISTOR 2N3700CSM • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic Ceramic Surface Mount Package (SOT23 Compatible) • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Power Dissipation at TA = 25°C Derate Above TA = 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 140V 80V 7.0V 1.0A 0.5W 2.9mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Unit 350 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5594 Issue 2 Page 1 of 3 SILICON NPN TRANSISTOR 2N3700CSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 30mA IB = 0 IEBO Emitter-Base Cut-Off Current VEB = 7.0V IC = 0 10 VEB = 5.0V IC = 0 10 ICES Collector-Emitter Cut-Off Current (1) ICBO hFE Collector-Base Cut-Off Current (1) DC Current Gain (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min. Typ. Max. 80 Unit V VCE = 90V 10 TA = 150°C 5 VCB = 140V IE = 0 10 IC = 0.10mA VCE = 10V 50 IC = 10mA VCE = 10V 90 IC = 150mA VCE = 10V 100 TA = -55°C 40 IC = 500mA VCE = 10V 50 IC = 1.0A VCE = 10V 15 IC = 150mA IB = 15mA 0.2 IC = 500mA IB = 50mA 0.5 IC = 150mA IB = 15mA 1.1 IC = 50mA VCE = 10V µA nA µA 300 V DYNAMIC CHARACTERISTICS |hfe| Magnitude of Small-Signal Short-Circuit Current Gain hfe Small-Signal Short-Circuit Current Gain Cobo Output Capacitance Cibo Input Capacitance 4 5 20 f = 20MHz IC = 1.0mA VCE = 5.0V f = 1.0KHz VCB = 10V 80 IE = 0 f = 1.0MHz VEB = 0.5V IC = 0 f = 1.0MHz 400 12 pF 60 pF Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5594 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR 2N3700CSM MECHANICAL DATA Dimensions in mm (inches) 1.02 ± 0.10 (0.04 ± 0.004) R0.31 (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) 1.40 (0.055) max. 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) LCC1 (Underside View) Pad 1 - Base Pad 2 – Emitter Pad 3 - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5594 Issue 2 Page 3 of 3