MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150°C Operating Junction Temperature Guard−Ring for Stress Protection These are Pb−Free and Halide−Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 60 VOLTS Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal SMA−FL CASE 403AA STYLE 6 Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • MARKING DIAGRAM 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B AYWW RAHG G RAH = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRAF360T3G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 0 1 Publication Order Number: MBRAF360/D MBRAF360T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 60 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 100°C 4.0 @ TL = 80°C A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 125°C IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Storage Temperature Range Tstg − 65 to +150 °C Operating Junction Temperature (Note 1) TJ − 65 to +150 °C A 6 A 125 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) RqJL 25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 90 °C/W Symbol Value Unit 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 3.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR V 0.740 mA 0.15 10 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = 150°C TJ = 175°C 1 TJ = 100°C TJ = 25°C 0.1 0.01 TJ = 175°C 1 0.1 TJ = −40°C 0.0 0.2 0.4 0.6 0.01 0.8 TJ = 150°C TJ = 25°C TJ = 100°C TJ = −40°C 0.0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 MBRAF360T3G IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 1.0E−01 TJ = 175°C 1.0E−02 TJ = 150°C 1.0E−03 TJ = 100°C 1.0E−04 1.0E−05 TJ = 25°C 1.0E−06 1.0E−07 0 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 60 Figure 3. Typical Reverse Current 1.0E−01 TJ = 175°C TJ = 150°C 1.0E−02 TJ = 100°C 1.0E−03 1.0E−04 TJ = 25°C 1.0E−05 1.0E−06 0 10 20 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current 1000 TJ = 25°C C, CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 100 10 0 10 20 40 30 50 VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance http://onsemi.com 3 60 70 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) MBRAF360T3G 100 10 1 50% Duty Cycle 10% 20% 5% 2% 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 6. Typical Transient Thermal Response, Junction−to−Ambient http://onsemi.com 4 100 1000 MBRAF360T3G PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c RECOMMENDED SOLDER FOOTPRINT* C SIDE VIEW SEATING PLANE 1.76 2X MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 5.56 b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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