MBRA320T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. Features •Small Compact Surface Mountable Package with J-Bent Leads •Rectangular Package for Automated Handling •Highly Stable Oxide Passivated Junction •Very Low Forward Voltage Drop •Guardring for Stress Protection •Pb-Free Package is Available http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 20 VOLTS 1 Cathode 2 Anode 1 Mechanical Characteristics: •Case: Epoxy, Molded •Weight: 70 mg (approximately) •Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable •Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds •Shipped in 12 mm tape, 5000 units per 13 inch reel •Polarity: Cathode Lead Indicated by Polarity Band •ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B •Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 100°C) Symbol Value Unit VRRM VRWM VR 20 V IO 3.0 MARKING DIAGRAM A32 AYWWG A32 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Tstg -65 to +150 °C Operating Junction Temperature TJ -65 to +125 °C dv/dt 10,000 V/ms Voltage Rate of Change (Rated VR, TJ = 25°C) 2 SMA CASE 403D PLASTIC 80 A Device Package Shipping† MBRA320T3G SMA (Pb-Free) 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 March, 2008 - Rev. 0 1 Publication Order Number: MBRA320/D MBRA320T3G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJL RθJA 15 80 °C/W VF 0.50 Volts Thermal Resistance - Junction-to-Lead (Note 1) Thermal Resistance - Junction-to-Ambient (Note 1) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (IF = 3.0 A, TJ = 25°C) Maximum Instantaneous Reverse Current (Note 2) IR TJ = 25°C TJ = 100°C 2.0 20 (VR = 20 V) mA 1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS 1 10 IF, FORWARD CURRENT (AMPS) IF, FORWARD CURRENT (AMPS) 10 TJ = 125°C TJ = 100°C TJ = 25°C 0.1 0.0 TJ = -65°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 TJ = 100°C TJ = 125°C TJ = 25°C 0.1 0.0 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) TJ = -65°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 MBRA320T3G 1.E-01 IR, REVERSE CURRENT (AMPS) 1.E-01 1.E-02 1.E-02 1.E-03 TJ = 100°C 1.E-03 TJ = 100°C TJ = 25°C 1.E-04 1.E-04 TJ = 25°C 1.E-05 1.E-06 IR, MAXIMUM REVERSE CURRENT (AMPS) TYPICAL CHARACTERISTICS 0 5 1.E-05 10 15 20 1.E-06 0 5 VR, REVERSE VOLTAGE (V) PFO, AVERAGE POWER DISSIPATION (W) dc 4 SQUARE WAVE 3 2 1 70 80 90 100 110 120 130 6 5 SQUARE WAVE 4 3 2 dc 1 0 0 1 TL, LEAD TEMPERATURE (°C) 2 TJ = 25°C 600 500 400 300 200 100 4 4 Figure 6. Forward Power Dissipation 700 0 0 3 IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating C, CAPACITANCE (pF) IO, AVERAGE FORWARD CURRENT (AMPS) RqJL = 15°C/W 60 20 Figure 4. Maximum Reverse Current 6 0 50 15 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 5 10 8 12 16 20 24 28 32 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance http://onsemi.com 3 36 40 5 MBRA320T3G R(t), TRANSIENT THERMAL RESISTANCE (°C/W) TYPICAL CHARACTERISTICS 1000 D = 0.5 100 10 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 100 1000 t, TIME (S) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Thermal Response, Junction-to-Ambient (min pad) 100 D = 0.5 0.2 10 0.1 0.05 1 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, TIME (S) Figure 9. Thermal Response, Junction to Ambient (1 inch pad) http://onsemi.com 4 1000 MBRA320T3G PACKAGE DIMENSIONS SMA CASE 403D-02 ISSUE C HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D-01 OBSOLETE, NEW STANDARD IS 403D-02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.91 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.16 2.41 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.075 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.085 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.095 0.006 0.064 0.016 0.115 0.180 0.220 0.060 A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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