NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 20 A, 1200 V VCEsat = 1.80 V Eoff = 0.7 mJ Features • • • • • Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge 5 ms Short Circuit Capability These are Pb−Free Devices C Typical Applications • • • • Inverter Welding Machines Microwave Ovens Industrial Switching Motor Control Inverter G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM IF A 40 20 200 A 40 20 IFM 200 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 600 V, TJ ≤ 150°C TSC 5 ms Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM 20N120L AYWWG W 192 77 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. August, 2012 − Rev. 2 C A Diode pulsed current, Tpulse limited by TJmax © Semiconductor Components Industries, LLC, 2012 G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB20N120LWG Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB20N120L/D NGTB20N120LWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.65 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 20 A VGE = 15 V, IC = 20 A, TJ = 150°C VCEsat − − 1.80 2.0 2.2 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 4700 − pF Coes − 155 − Cres − 100 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 20 A, VGE = 15 V Gate to collector charge Qg 200 Qge 36 Qgc 98 td(on) 86 tr 26 td(off) 235 tf 180 Eon 3.1 Eoff 0.7 td(on) 84 tr 26 td(off) 235 tf 250 Eon 3.9 Eoff 1.3 VF 1.55 1.65 nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 0 V/ 15 V Turn−off switching loss Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 125°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 0 V/ 15 V Turn−off switching loss ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 20 A VGE = 0 V, IF = 20 A, TJ = 150°C http://onsemi.com 2 1.75 V NGTB20N120LWG TYPICAL CHARACTERISTICS 120 VGE = 20 to 13 V TJ = 25°C 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 11 V 10 V 80 60 9V 40 20 0 8V 7V 0 1 2 3 4 40 8V 20 7V 0 1 2 3 4 Figure 2. Output Characteristics 5 120 IC, COLLECTOR CURRENT (A) 100 11 V 80 10 V TJ = −40°C 60 40 9V 7V 20 8V 0 1 2 3 4 100 80 60 40 5 TJ = 150°C 20 0 TJ = 25°C 0 5 10 15 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 120 Cies IF, FORWARD CURRENT (A) IC, COLLECTOR CURRENT (A) 9V Figure 1. Output Characteristics 10,000 C, CAPACITANCE (pF) 10 V 60 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 to 13 V 1000 100 Coes Cres 10 80 VCE, COLLECTOR−EMITTER VOLTAGE (V) 120 0 100 0 5 VGE = 20 to 11 V TJ = 150°C 0 25 50 75 100 125 150 175 100 TJ = 25°C 60 40 20 0 200 TJ = 125°C 80 0 0.5 1.0 1.5 2.0 2.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics http://onsemi.com 3 3.0 NGTB20N120LWG TYPICAL CHARACTERISTICS 4.5 200 V 14 400 V 12 4.0 SWITCHING ENERGY (mJ) VGE, GATE−EMITTER VOLTAGE (V) 16 600 V 10 8 6 4 2 0 0 50 100 150 1.5 Eoff 1.0 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature 160 10 td(off) 100 td(on) tr 10 VCE = 600 V VGE = 15 V IC = 20 A RG = 10 W 0 20 40 VCE = 600 V VGE = 15 V TJ = 150°C RG = 10 W 9 SWITCHING ENERGY (mJ) SWITCHING TIME (ns) 2.0 QG, GATE CHARGE (nC) 8 7 Eon 6 5 4 Eoff 3 2 1 60 80 100 120 140 0 160 8 12 16 20 24 28 32 36 40 44 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. IC 1000 48 52 9 8 tf 7 td(off) 100 ENERGY (mJ) SWITCHING TIME (ns) VCE = 600 V VGE = 15 V IC = 20 A RG = 10 W 2.5 0 250 200 tf td(on) tr 10 1 Eon 3.0 0.5 1000 1 3.5 VCE = 600 V VGE = 15 V TJ = 150°C RG = 10 W 8 12 16 20 6 VCE = 600 V VGE = 15 V IC = 20 A TJ = 150°C Eon 5 4 3 Eoff 2 1 24 28 32 36 40 44 48 0 52 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W) Figure 11. Switching Time vs. IC Figure 12. Energy Loss vs. RG http://onsemi.com 4 75 85 NGTB20N120LWG TYPICAL CHARACTERISTICS 7 td(off) 1000 tf td(on) 100 tr VCE = 600 V VGE = 15 V IC = 20 A TJ = 150°C 10 1 5 15 25 35 45 55 65 2 Eoff 1 375 425 475 525 575 625 675 725 775 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Switching Time vs. RG Figure 14. Energy Loss vs. VCE 1000 IC, COLLECTOR CURRENT (A) td(off) 100 td(on) tr VGE = 15 V IC = 20 A RG = 10 W TJ = 150°C 375 425 475 525 575 625 675 725 50 ms 100 100 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 775 1 ms 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 3 RG, GATE RESISTOR (W) tf 1 Eon 4 0 1000 10 5 85 75 VGE = 15 V IC = 20 A RG = 10 W TJ = 150°C 6 SWITCHING ENERGY (mJ) SWITCHING TIME (ns) 10,000 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB20N120LWG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 1 50% Duty Cycle RqJC = 0.65 20% 0.1 10% Junction R1 5% 1% C2 C1 Case 0.00001 Ri (°C/W) 0.02659 0.06231 0.10246 0.2121 0.1057 Cn ti (sec) 1.0E−4 1.76E−4 0.002 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance 10 THERMAL RESPONSE (ZqJC) RqJC = 1.5 1 50% Duty Cycle 20% 10% 0.1 5% 2% 0.01 0.001 R1 Junction R2 Case Ci = ti/Ri C1 1% 0.00001 Cn C2 Ri (°C/W) ti (sec) 0.19655 0.414 0.5 0.345 0.0934 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Rn 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 19. Diode Transient Thermal Impedance Figure 20. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 1000 NGTB20N120LWG Figure 21. Definition of Turn On Waveform http://onsemi.com 7 NGTB20N120LWG Figure 22. Definition of Turn Off Waveform http://onsemi.com 8 NGTB20N120LWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE E −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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