NGTB20N120L D

NGTB20N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
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20 A, 1200 V
VCEsat = 1.80 V
Eoff = 0.7 mJ
Features
•
•
•
•
•
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
5 ms Short Circuit Capability
These are Pb−Free Devices
C
Typical Applications
•
•
•
•
Inverter Welding Machines
Microwave Ovens
Industrial Switching
Motor Control Inverter
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM
IF
A
40
20
200
A
40
20
IFM
200
A
Gate−emitter voltage
VGE
$20
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Short Circuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ ≤ 150°C
TSC
5
ms
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
TO−247
CASE 340L
STYLE 4
E
MARKING DIAGRAM
20N120L
AYWWG
W
192
77
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
August, 2012 − Rev. 2
C
A
Diode pulsed current, Tpulse limited
by TJmax
© Semiconductor Components Industries, LLC, 2012
G
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB20N120LWG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB20N120L/D
NGTB20N120LWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.65
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.5
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 20 A, TJ = 150°C
VCEsat
−
−
1.80
2.0
2.2
−
V
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
ICES
−
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
4700
−
pF
Coes
−
155
−
Cres
−
100
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 20 A, VGE = 15 V
Gate to collector charge
Qg
200
Qge
36
Qgc
98
td(on)
86
tr
26
td(off)
235
tf
180
Eon
3.1
Eoff
0.7
td(on)
84
tr
26
td(off)
235
tf
250
Eon
3.9
Eoff
1.3
VF
1.55
1.65
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn−off switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 125°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn−off switching loss
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 20 A
VGE = 0 V, IF = 20 A, TJ = 150°C
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2
1.75
V
NGTB20N120LWG
TYPICAL CHARACTERISTICS
120
VGE = 20 to 13 V
TJ = 25°C
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
120
11 V
10 V
80
60
9V
40
20
0
8V
7V
0
1
2
3
4
40
8V
20
7V
0
1
2
3
4
Figure 2. Output Characteristics
5
120
IC, COLLECTOR CURRENT (A)
100
11 V
80
10 V
TJ = −40°C
60
40
9V
7V
20
8V
0
1
2
3
4
100
80
60
40
5
TJ = 150°C
20
0
TJ = 25°C
0
5
10
15
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
120
Cies
IF, FORWARD CURRENT (A)
IC, COLLECTOR CURRENT (A)
9V
Figure 1. Output Characteristics
10,000
C, CAPACITANCE (pF)
10 V
60
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 to 13 V
1000
100
Coes
Cres
10
80
VCE, COLLECTOR−EMITTER VOLTAGE (V)
120
0
100
0
5
VGE = 20 to 11 V
TJ = 150°C
0
25
50
75
100
125
150
175
100
TJ = 25°C
60
40
20
0
200
TJ = 125°C
80
0
0.5
1.0
1.5
2.0
2.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 5. Typical Capacitance
Figure 6. Diode Forward Characteristics
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3
3.0
NGTB20N120LWG
TYPICAL CHARACTERISTICS
4.5
200 V
14
400 V
12
4.0
SWITCHING ENERGY (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
16
600 V
10
8
6
4
2
0
0
50
100
150
1.5
Eoff
1.0
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Charge
Figure 8. Energy Loss vs. Temperature
160
10
td(off)
100
td(on)
tr
10
VCE = 600 V
VGE = 15 V
IC = 20 A
RG = 10 W
0
20
40
VCE = 600 V
VGE = 15 V
TJ = 150°C
RG = 10 W
9
SWITCHING ENERGY (mJ)
SWITCHING TIME (ns)
2.0
QG, GATE CHARGE (nC)
8
7
Eon
6
5
4
Eoff
3
2
1
60
80
100
120
140
0
160
8
12
16
20
24
28
32
36
40
44
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 9. Switching Time vs. Temperature
Figure 10. Energy Loss vs. IC
1000
48
52
9
8
tf
7
td(off)
100
ENERGY (mJ)
SWITCHING TIME (ns)
VCE = 600 V
VGE = 15 V
IC = 20 A
RG = 10 W
2.5
0
250
200
tf
td(on)
tr
10
1
Eon
3.0
0.5
1000
1
3.5
VCE = 600 V
VGE = 15 V
TJ = 150°C
RG = 10 W
8
12
16
20
6
VCE = 600 V
VGE = 15 V
IC = 20 A
TJ = 150°C
Eon
5
4
3
Eoff
2
1
24
28
32
36
40
44
48
0
52
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
RG, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC
Figure 12. Energy Loss vs. RG
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4
75
85
NGTB20N120LWG
TYPICAL CHARACTERISTICS
7
td(off)
1000
tf
td(on)
100
tr
VCE = 600 V
VGE = 15 V
IC = 20 A
TJ = 150°C
10
1
5
15
25
35
45
55
65
2
Eoff
1
375 425
475
525
575
625
675
725 775
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. RG
Figure 14. Energy Loss vs. VCE
1000
IC, COLLECTOR CURRENT (A)
td(off)
100
td(on)
tr
VGE = 15 V
IC = 20 A
RG = 10 W
TJ = 150°C
375 425
475
525
575
625
675
725
50 ms
100
100 ms
10
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
775
1 ms
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
Figure 16. Safe Operating Area
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
3
RG, GATE RESISTOR (W)
tf
1
Eon
4
0
1000
10
5
85
75
VGE = 15 V
IC = 20 A
RG = 10 W
TJ = 150°C
6
SWITCHING ENERGY (mJ)
SWITCHING TIME (ns)
10,000
100
10
1
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
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5
NGTB20N120LWG
TYPICAL CHARACTERISTICS
THERMAL RESPONSE (ZqJC)
1
50% Duty Cycle
RqJC = 0.65
20%
0.1 10%
Junction R1
5%
1%
C2
C1
Case
0.00001
Ri (°C/W)
0.02659
0.06231
0.10246
0.2121
0.1057
Cn
ti (sec)
1.0E−4
1.76E−4
0.002
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
Rn
Ci = ti/Ri
2%
0.01
R2
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
10
THERMAL RESPONSE (ZqJC)
RqJC = 1.5
1
50% Duty Cycle
20%
10%
0.1 5%
2%
0.01
0.001
R1
Junction
R2
Case
Ci = ti/Ri
C1
1%
0.00001
Cn
C2
Ri (°C/W)
ti (sec)
0.19655
0.414
0.5
0.345
0.0934
1.48E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
Rn
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 19. Diode Transient Thermal Impedance
Figure 20. Test Circuit for Switching Characteristics
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6
10
100
1000
NGTB20N120LWG
Figure 21. Definition of Turn On Waveform
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7
NGTB20N120LWG
Figure 22. Definition of Turn Off Waveform
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8
NGTB20N120LWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
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NGTB20N120L/D