STMICROELECTRONICS RHF330

RHF330
Rad-hard 1 GHz low noise operational amplifier
Preliminary data
Features
■
Bandwidth: 1 GHz (gain = +2)
■
Slew rate: 1800 V/μs
Pin connections
(top view)
1
8
■
Input noise: 1.3 nV/√ Hz
NC
■
Distortion: SFDR = -78 dBc (10 MHz, 2 Vpp)
IN -
NC
+VCC
■
100 Ω load optimized output stage
IN +
OUT
■
5 V power supply
■
300 krad MIL-STD-883 1019.7 ELDRS free
compliant
■
SEL immune at 125° C, LET up to
110 MEV.cm2/mg
■
SET characterized, LET up to
110 MEV.cm2/mg
■
QMLV qualified under SMD 5962-0723101
■
Mass: 0.45 g
■
Communication satellites
■
Space data acquisition systems
■
Aerospace instrumentation
■
Nuclear and high energy physics
■
Harsh radiation environments
■
ADC drivers
4
Description
Device summary
Order code
SMD pin
Quality level
RHF330K1
-
Engineering model
Flat-8
Gold
QMLV-Flight
Flat-8
Gold
RHF330K-01V 5962F0723101VXC
Note:
May 2010
5
The RHF330 is a current feedback operational
amplifier that uses very high-speed
complementary technology to provide a large
bandwidth of 1 GHz in gains of 2 while drawing
only 16.6 mA of quiescent current. The RHF330
also offers 0.1 dB gain flatness up to 160 MHz
with a gain of 2. With a slew rate of 1800 V/µs and
an output stage optimized for standard 100 Ω
loads, this device is highly suitable for
applications where speed and low distortion are
the main requirements. The device is a single
operator available in a Flat-8 hermetic ceramic
package, saving board space as well as providing
excellent thermal and dynamic performance.
Applications
Table 1.
NC
-VCC
Package Lead finish
Marking
RHF310K1
EPPL Packing
-
Strip pack
5962F0723101VXC Target Strip pack
Contact your ST sales office for information on the specific conditions for products in die form and
QML-Q versions.
Doc ID 15576 Rev 3
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/22
www.st.com
22
Contents
RHF330
Contents
1
Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Demonstration board schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Power supply considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
5
Single power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Noise measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1
Measurement of the input voltage noise eN . . . . . . . . . . . . . . . . . . . . . . . 15
5.2
Measurement of the negative input current noise iNn . . . . . . . . . . . . . . . 15
5.3
Measurement of the positive input current noise iNp . . . . . . . . . . . . . . . . 15
6
Intermodulation distortion product . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7
Bias of an inverting amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
8
Active filtering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
9
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
Doc ID 15576 Rev 3
RHF330
1
Absolute maximum ratings and operating conditions
Absolute maximum ratings and operating conditions
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
6
V
± 0.5
V
± 2.5
V
-65 to +150
°C
Maximum junction temperature
150
°C
Rthja
Flat-8 thermal resistance junction to ambient
50
°C/W
Rthjc
Flat-8 thermal resistance junction to case
30
°C/W
Pmax
Flat-8 maximum power dissipation(4)
(Tamb = + 25° C) for Tj = 150° C
830
mW
HBM: human body model(5)
pins 1, 4, 5, 6, 7 and 8
pins 2 and 3
2
0.6
kV
MM: machine model(6)
pins 1, 4, 5, 6, 7 and 8
pins 2 and 3
200
80
V
CDM: charged device model(7)
pins 1, 4, 5, 6, 7 and 8
pins 2 and 3
1.5
1
kV
Latch-up immunity
200
mA
VCC
Vid
Parameter
Supply voltage(1)
(2)
Differential input voltage
(3)
Vin
Input voltage range
Tstg
Storage temperature
Tj
ESD
1. All voltage values are measured with respect to the ground pin.
2. Differential voltage is the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output voltage must never exceed VCC +0.3 V.
4. Short-circuits can cause excessive heating. Destructive dissipation can result from short-circuits on all
amplifiers.
5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a
1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations
while the other pins are floating.
6. This is a minimum value.
Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5Ω). This is done for all couples of
connected pin combinations while the other pins are floating.
7. Charged device model: all pins and package are charged together to the specified voltage and then
discharged directly to ground through only one pin.
Table 3.
Operating conditions
Symbol
Parameter
VCC
Supply voltage
Vicm
Common-mode input voltage
Tamb
Operating free-air temperature
range(1)
Value
Unit
4.5 to 5.5
V
-VCC +1.5 to +VCC-1.5
V
-55 to +125
°C
1. Tj must never exceed +150°C. P = (Tj - Tamb)/Rthja = (Tj - Tcase)/Rthjc with P being the power that the
RHF330 must dissipate in the application.
Doc ID 15576 Rev 3
3/22
Electrical characteristics
RHF330
2
Electrical characteristics
Table 4.
Electrical characteristics for VCC= ±2.5 V, Tamb = +25° C
(unless otherwise specified)
Symbol
Parameter
Test conditions
Temp.
Min.
+125°C
-3.1
+25°C
-3.1
-55°C
-3.1
Typ.
Max.
Unit
DC performance
Vio
Input offset voltage
+3.1
0.18
Iib+
Iib-
55
+25°C
Inverting input bias current
26
CMR
55
+125°C
34
+25°C
SVR
PSRR
Supply voltage rejection ratio
20 log (ΔVCC/ΔVout)
Power supply rejection ratio
20 log (ΔVCC/ΔVout)
ΔVic = ±1 V
ΔVCC = 3.5 V to 5 V
ΔVCC = 200 mVpp at
1 kHz
7
Supply current
No load
22
μA
μA
34
+125°C
48
+25°C
48
-55°C
48
+125°C
45
+25°C
60
-55°C
45
+25°C
54
dB
74
dB
56
dB
+125°C
ICC
55
-55°C
-55°C
Common mode rejection ratio
20 log (ΔVic/ΔVio)
mV
+3.1
+125°C
Non-inverting input bias
current
+3.1
20.2
+25°C
16.6
-55°C
20.2
mA
20.2
Dynamic performance and output characteristics
ROL
Transimpedance
ΔVout= ±1 V, RL = 100 Ω
Vout = 20 mVpp
RL = 100 Ω, AV = +2
-3 dB bandwidth
RL = 100 Ω, AV = -4
Bw
Gain flatness at 0.1 dB
4/22
Vout = 20 mVpp
AV = +2, RL = 100 Ω
Doc ID 15576 Rev 3
+125°C
85
+25°C
104
-55°C
85
+25°C
kΩ
1000
+125°C
400
+25°C
400
-55°C
400
+25°C
153
630
160
MHz
RHF330
Electrical characteristics
Table 4.
Electrical characteristics for VCC= ±2.5 V, Tamb = +25° C
(unless otherwise specified) (continued)
Symbol
SR
VOH
Parameter
Slew rate
High level output voltage
Test conditions
Temp.
Vout = 2 Vpp,
AV = +2, RL = 100 Ω
+25°C
Min.
Typ.
1800
+125°C
1.35
+25°C
1.5
-55°C
1.35
Low level output voltage
-1.35
V
RL = 100 Ω
+25°C
Output to GND
Iout
Isource
(2)
V/μs
1.64
-1.55
-55°C
Isink(1)
Unit
V
RL = 100 Ω
+125°C
VOL
Max.
Output to GND
-1.5
-1.35
+125°C
360
+25°C
360
-55°C
360
+125°C
-320
+25°C
-320
-55°C
-320
453
mA
-400
Noise and distortion
eN
Equivalent input noise
voltage(3)
F = 100 kHz
+25°C
1.3
nV/√ Hz
Equivalent positive input noise
F = 100 kHz
current(3)
+25°C
22
pA/√ Hz
Equivalent negative input
noise current(3)
+25°C
16
pA/√ Hz
F = 10 MHz
+25°C
-78
F = 20 MHz
+25°C
-73
F = 100 MHz
+25°C
-48
F = 150 MHz
+25°C
-37
iN
F = 100 kHz
AV = +2, Vout = 2 Vpp,
RL = 100 Ω
SFDR
Spurious free dynamic range
dBc
1. See Figure 11 for more details.
2. See Figure 10 for more details.
3. See Chapter 5 on page 14.
Table 5.
Closed-loop gain and feedback components
Gain (V/V)
+1
1
+2
-2
+4
-4
+ 10
- 10
Rfb (Ω)
300
270
300
270
240
240
200
200
Doc ID 15576 Rev 3
5/22
Electrical characteristics
Frequency response, positive gain Figure 2.
Flatness, gain = +2 compensated
6.5
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4 Small Signal
-6 Vcc=5V
-8 Load=100Ω
-10
1M
Gain=10
Vin
Vout
+
6.4
-
6.3
Gain=4
Gain (dB)
Gain (dB)
Figure 1.
RHF330
Gain=2
6.2
0.5pF
100
300
300
Gain=+2, Vcc=+5V,
Small Signal
6.1
Gain=1
6.0
5.9
10M
100M
5.8
1M
1G
10M
Frequency (Hz)
Flatness, gain = +4 compensated
Figure 4.
12.2
20.3
12.1
20.2
12.0
20.1
11.9
20.0
11.8
19.9
Gain (dB)
Gain (dB)
Figure 3.
11.7
Vin
Vout
+
11.6
2.7pF
19.8
Vin
240
19.6
100
82
19.5
19.4
Gain=+4, Vcc=+5V,
Small Signal
11.2
1M
Vout
+
19.7
-
11.4
11.3
10M
100M
12pF
Gain=+10, Vcc=+5V,
Small Signal
19.3
1M
1G
100
200
22
10M
Frequency (Hz)
Figure 5.
100M
1G
Frequency (Hz)
Quiescent current vs. VCC
Figure 6.
Positive slew rate
2.00
20
1.75
15
Icc(+)
1.50
Output Response (V)
10
5
Icc (mA)
1G
Flatness, gain = +10 compensated
-
11.5
100M
Frequency (Hz)
0
-5
-10
Icc(-)
Gain=+2
Vcc=+5V
Load=100Ω
1.25
1.00
0.75
0.50
0.25
-15
-20
0.0
Gain=+2
Input to ground, no load
0.5
1.0
0.00
1.5
2.0
2.5
-2ns
6/22
-1ns
0s
Time (ns)
+/- Vcc (V)
Doc ID 15576 Rev 3
1ns
2ns
RHF330
Figure 7.
Electrical characteristics
Negative slew rate
Figure 8.
2.00
4.0
1.50
Max. Output Amplitude (Vp-p)
Gain=+2
Vcc=+5V
Load=100Ω
1.75
Output Response (V)
Output amplitude vs. load
1.25
1.00
0.75
0.50
0.25
3.5
3.0
2.5
Gain=+2
Vcc=5V
Load=100Ω
0.00
2.0
-2ns
-1ns
0s
1ns
2ns
10
100
Time (ns)
Figure 9.
1k
10k
100k
Load (ohms)
Distortion vs. amplitude
Figure 10. Isource
0
-50
Gain=+2
Vcc=+5V
F=10MHz
Load=100Ω
-100
Isource (mA)
-150
HD2
HD3
-200
-250
-300
-350
-400
-450
-500
-550
-600
0.0
0.5
1.0
1.5
2.0
V (V)
Figure 11. Isink
Figure 12. Noise figure
600
550
500
450
Isink (mA)
400
350
300
250
200
150
100
Vcc=5V
50
0
-2.0
-1.5
-1.0
-0.5
0.0
V (V)
Doc ID 15576 Rev 3
7/22
Electrical characteristics
RHF330
Figure 13. Input current noise vs. frequency
Figure 14. Input voltage noise vs. frequency
Gain=14.1dB
Rg=180ohms
Rfb=750ohms
non-inverting input in short-circuit
Vcc=5V
Neg. Current
Noise
Gain=37dB
Rg=10ohms
Rfb=750ohms
non-inverting input in short-circuit
Vcc=5V
Pos. Current
Noise
Figure 15. Reverse isolation vs. frequency
Figure 16. Iout vs. temperature
2.0
0
1.5
Isource
-20
0.5
-40
Iout (A)
Gain (dB)
1.0
-60
0.0
-0.5
Isink
-1.0
-80
Small Signal
Vcc=5V
Load=100Ω
-100
1M
-1.5
Output: short-circuit
Vcc=5V
-2.0
10M
100M
1G
-40
-20
0
Frequency (Hz)
Figure 17. CMR vs. temperature
40
60
80
100
120
80
100
120
Figure 18. SVR vs. temperature
60
85
58
80
56
75
54
SVR (dB)
CMR (dB)
20
Temperature (°C)
52
70
65
50
60
48
46
55
Vcc=5V
Load=100Ω
Gain=+1
Vcc=5V
Load=100Ω
50
-40
-20
0
20
40
60
80
100
120
Temperature (°C)
8/22
-40
-20
0
20
40
60
Temperature (°C)
Doc ID 15576 Rev 3
RHF330
Electrical characteristics
Figure 19. ROL vs. temperature
Figure 20. VOH and VOL vs. temperature
180
2
VOH
1
VOH & OL (V)
ROL (M )
160
140
120
0
-1
VOL
-2
100
Gain=+2
Vcc=5V
Load=100Ω
-3
Open Loop
Vcc=5V
-4
-40
80
-40
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
Figure 21. Ibias vs. temperature
Figure 22. ICC vs. temperature
20
30
28
15
Ib(+)
Icc(+)
26
10
24
5
0
20
ICC (mA)
I bias ( A)
22
18
16
-10
Icc(-)
-15
Ib(−)
14
-5
12
-20
10
-25
Vcc=5V
Load=100Ω
8
6
-30
Gain=+2
Vcc=5V
no Load
In+/In- to GND
-35
-40
-20
0
20
40
60
80
100
120
Temperature (°C)
-40
-20
0
20
40
60
80
100
120
Temperature ( C)
Figure 23. Vio vs. temperature
1000
VIO (micro V)
800
Open Loop
Vcc=5V
Load=100Ω
600
400
200
0
-40
-20
0
20
40
60
80
100
120
Temperature ( C)
Doc ID 15576 Rev 3
9/22
Demonstration board schematics
3
RHF330
Demonstration board schematics
Figure 24. Electrical schematics (inverting and non-inverting gain configurations)
Figure 25. RHF3xx demonstration board
10/22
Doc ID 15576 Rev 3
RHF330
Demonstration board schematics
Figure 26. Top view layout
Figure 27. Bottom view layout
Doc ID 15576 Rev 3
11/22
Power supply considerations
4
RHF330
Power supply considerations
Correct power supply bypassing is very important for optimizing performance in highfrequency ranges. The bypass capacitors should be placed as close as possible to the IC
pins to improve high-frequency bypassing. A capacitor greater than 1 μF is necessary to
minimize the distortion. For better quality bypassing, a 10 nF capacitor can be added. It
should also be placed as close as possible to the IC pins. The bypass capacitors must be
incorporated for both the negative and the positive supply.
For example, on the RHF3xx single op-amp demonstration board, these capacitors are C6,
C7, C8, C9.
Figure 28. Circuit for power supply bypassing
+VCC
10 µF
+
10 nF
+
10 nF
-
10 µF
+
-VCC
AM00835
4.1
Single power supply
In the event that a single supply system is used, biasing is necessary to obtain a positive
output dynamic range between 0 V and +VCC supply rails. Considering the values of VOH
and VOL, the amplifier provides an output swing from +0.9 V to +4.1 V on a 100 Ω load.
The amplifier must be biased with a mid-supply (nominally +VCC/2), in order to maintain the
DC component of the signal at this value. Several options are possible to provide this bias
supply, such as a virtual ground using an operational amplifier or a two-resistance divider
(which is the cheapest solution). A high resistance value is required to limit the current
consumption. On the other hand, the current must be high enough to bias the non-inverting
input of the amplifier. If we consider this bias current (55 μA maximum) as 1% of the current
through the resistance divider, to keep a stable mid-supply, two resistances of 470 Ω can be
used.
The input provides a high-pass filter with a break frequency below 10 Hz which is necessary
to remove the original 0 V DC component of the input signal, and to set it at +VCC/2.
Figure 29 on page 13 illustrates a 5 V single power supply configuration for the RHF3xx
single op-amp demonstration board.
12/22
Doc ID 15576 Rev 3
RHF330
Power supply considerations
A capacitor CG is added in the gain network to ensure a unity gain at low frequencies to
keep the right DC component at the output. CG contributes to a high-pass filter with Rfb//RG
and its value is calculated with regard to the cut-off frequency of this low-pass filter.
Figure 29. Circuit for +5 V single supply
+5 V
10 µF
+
IN
+5 V
Rin
1 kΩ
100 µ F
_
OUT
100 Ω
R1
470 Ω
Rfb
R2
470 Ω
+ 1 µF
RG
10 nF
+
CG
AM00836
Doc ID 15576 Rev 3
13/22
Noise measurements
5
RHF330
Noise measurements
The noise model is shown in Figure 30.
●
eN: input voltage noise of the amplifier
●
iNn: negative input current noise of the amplifier
●
iNp: positive input current noise of the amplifier
Figure 30. Noise model
+
Output
iN +
R3
HP3577
Input noise:
8 nV/√Hz
_
N3
eN
iN -
R2
N2
R1
N1
AM00837
The thermal noise of a resistance R is:
4kTRΔF
where ΔF is the specified bandwidth.
On a 1 Hz bandwidth the thermal noise is reduced to:
4kTR
where k is the Boltzmann's constant, equal to 1,374.E(-23)J/°K. T is the temperature (°K).
The output noise eNo is calculated using the superposition theorem. However, eNo is not
the simple sum of all noise sources but rather the square root of the sum of the square of
each noise source, as shown in Equation 1.
Equation 1
eNo =
14/22
2
2
2
2
2
V1 + V2 + V3 + V4 + V5 + V6
2
Doc ID 15576 Rev 3
RHF330
Noise measurements
Equation 2
2
2
2
2
2
2
2
2
2
2 R2
eNo = eN × g + iNn × R2 + iNp × R3 × g + -------- × 4kTR1 + 4kTR2 + 1 + R2
-------- × 4kTR3
R1
R1
The input noise of the instrumentation must be extracted from the measured noise value.
The real output noise value of the driver is:
Equation 3
eNo =
2
( Measured ) – ( instrumentation )
2
The input noise is called equivalent input noise because it is not directly measured but is
evaluated from the measurement of the output divided by the closed loop gain (eNo/g).
After simplification of the fourth and the fifth term of Equation 2 we obtain:
Equation 4
2
2
2
2
2
2
2
2
2
eNo = eN × g + iNn × R2 + iNp × R3 × g + g × 4kTR2 + 1 + R2
-------- × 4kTR3
R1
5.1
Measurement of the input voltage noise eN
If we assume a short-circuit on the non-inverting input (R3=0), from Equation 4 we can
derive:
Equation 5
eNo =
2
2
2
2
eN × g + iNn × R2 + g × 4kTR2
To easily extract the value of eN, the resistance R2 is as low as possible. On the other hand,
the gain must be large enough.
R3=0, gain: g=100
5.2
Measurement of the negative input current noise iNn
To measure the negative input current noise iNn, we set R3=0 and use Equation 5. This
time, the gain must be lower to decrease the thermal noise contribution.
R3=0, gain: g=10
5.3
Measurement of the positive input current noise iNp
To extract iNp from Equation 3, a resistance R3 is connected to the non-inverting input. The
value of R3 must be chosen so that its thermal noise contribution is as low as possible
against the iNp contribution.
R3=100 W, gain: g=10
Doc ID 15576 Rev 3
15/22
Intermodulation distortion product
6
RHF330
Intermodulation distortion product
The non-ideal output of the amplifier can be described by the following series of equations.
V out = C 0 + C 1 V in + C 2 V
2
in
+ …+ C n V
n
in
Where the input is Vin=Asinωt, C0 is the DC component, C1(Vin) is the fundamental and Cn is
the amplitude of the harmonics of the output signal Vout.
A one-frequency (one-tone) input signal contributes to harmonic distortion. A two-tone input
signal contributes to harmonic distortion and to the intermodulation product.
The study of the intermodulation and distortion for a two-tone input signal is the first step in
characterizing the driving capability of multi-tone input signals.
In this case:
V in = A sin ω1 t + A sin ω2 t
Then:
2
V out = C 0 + C 1 ( A sin ω1 t + A sin ω2 t ) + C 2 ( A sin ω1 t + A sin ω2 t ) …+ C n ( A sin ω1 t + A sin ω2 t )
n
From this expression, we can extract the distortion terms and the intermodulation terms
from a single sine wave.
●
Second order intermodulation terms IM2 by the frequencies (ω1-ω2) and (ω1+ω2) with an
amplitude of C2A2.
●
Third order intermodulation terms IM3 by the frequencies (2ω1-ω2), (2ω1+ω2), (−ω1+2ω2)
and (ω1+2ω2) with an amplitude of (3/4)C3A3.
The intermodulation product of the driver is measured by using the driver as a mixer in a
summing amplifier configuration (Figure 31 on page 17). In this way, the non-linearity
problem of an external mixing device is avoided.
16/22
Doc ID 15576 Rev 3
RHF330
Intermodulation distortion product
Figure 31. Inverting summing amplifier
Vin1
R1
Vin2
R2
Rfb
_
Vout
+
100 Ω
R
AM00838
Doc ID 15576 Rev 3
17/22
Bias of an inverting amplifier
7
RHF330
Bias of an inverting amplifier
A resistance is necessary to achieve good input biasing, such as resistance R shown in
Figure 32.
The value of this resistance is calculated from the negative and positive input bias current.
The aim is to compensate for the offset bias current, which can affect the input offset voltage
and the output DC component. Assuming Iib-, Iib+, Rin, Rfb and a zero volt output, the
resistance R is:
R in × R fb
R = ----------------------R in + R fb
Figure 32. Compensation of the input bias current
Rfb
Iib -
Rin
_
VCC+
Output
+
Load
VCC -
Iib +
R
AM00839
18/22
Doc ID 15576 Rev 3
RHF330
8
Active filtering
Active filtering
Figure 33. Low-pass active filtering, Sallen-Key
C1
R1
R2
+
IN
OUT
C2
_
RG
100 Ω
Rfb
AM00840
From the resistors Rfb and RG we can directly calculate the gain of the filter in a classic noninverting amplification configuration.
R fb
A V = g = 1 + -------Rg
We assume the following expression is the response of the system.
Vout jω
g
T jω = ---------------- = ---------------------------------------2
Vin jω
jω
( jω)
1 + 2ζ ----- + -----------ωc ω 2
c
The cut-off frequency is not gain-dependent and so becomes:
1
ωc = -----------------------------------R1R2C1C2
The damping factor is calculated by the following expression.
1
ζ = --- ωc ( C 1 R 1 + C 1 R 2 + C 2 R 1 – C 1 R 1 g )
2
The higher the gain, the more sensitive the damping factor is. When the gain is higher than
1, it is preferable to use very stable resistor and capacitor values. In the case of R1=R2=R:
R fb
2C 2 – C 1 -------Rg
ζ = -------------------------------2 C1 C2
Due to a limited selection of capacitor values in comparison with the resistors, we can set
C1=C2=C, so that:
R fb
2R 2 – R 1 -------Rg
ζ = -------------------------------2 R1 R2
Doc ID 15576 Rev 3
19/22
Package information
9
RHF330
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 34. Ceramic Flat-8 package mechanical drawing
Table 6.
Ceramic Flat-8 package mechanical data
Dimensions
Ref.
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
2.24
2.44
2.64
0.088
0.096
0.104
b
0.38
0.43
0.48
0.015
0.017
0.019
c
0.10
0.13
0.16
0.004
0.005
0.006
D
6.35
6.48
6.61
0.250
0.255
0.260
E
6.35
6.48
6.61
0.250
0.255
0.260
E2
4.32
4.45
4.58
0.170
0.175
0.180
E3
0.88
1.01
1.14
0.035
0.040
0.045
e
1.27
0.050
L
3.00
0.118
Q
0.66
0.79
0.92
0.026
0.031
0.092
S1
0.92
1.12
1.32
0.036
0.044
0.052
N
20/22
Millimeters
08
Doc ID 15576 Rev 3
08
RHF330
10
Revision history
Revision history
Table 7.
Document revision history
Date
Revision
Changes
20-May-2009
1
Initial release.
04-May-2010
2
Modified temperature limits in Table 4.
Changed order codes in Table 7.
27-May-2010
3
Added Mass in Features on cover page.
Added full ordering information in Table 1.
Doc ID 15576 Rev 3
21/22
RHF330
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2010 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
22/22
Doc ID 15576 Rev 3