RHF350 Rad-hard 550 MHz low noise operational amplifier Datasheet − production data Features Ceramic Flat-8S ■ Bandwidth: 550 MHz (unity gain) ■ Quiescent current: 4 mA ■ Slew rate: 940 V/µs ■ Input noise: 1.5 nV/√Hz ■ Distortion: SFDR = -66 dBc (10 MHz, 1Vpp) ■ 2.8 Vpp minimum output swing on 100 Ω load for a +5 V supply ■ 5 V power supply NC 300 krad MIL-STD-883 1019 ELDRS free compliant IN - NC +VCC IN + OUT ■ ■ Pin connections (top view) 1 NC -VCC SEL immune at 125 °C, LET up to 110 MEV.cm2/mg 4 5 The upper metallic lid is not electrically connected to any pin, nor to the IC die inside the package. ■ SET characterized, LET up to 110 MEV.cm2/mg ■ QMLV qualified ■ Available in ceramic Flat-8S package Description The RHF350 device is a current feedback operational amplifier that uses very high speed complementary technology to provide a bandwidth of up to 550 MHz while drawing only 4 mA of quiescent current. With a slew rate of 940 V/µs and an output stage optimized for driving a standard 100 Ω load, this circuit is highly suitable for applications where speed and powersaving are the main requirements. The device is a single operator available in a Flat-8 hermetic ceramic package, saving board space as well as providing excellent thermal and dynamic performance. Applications ■ Communication satellites ■ Space data acquisition systems ■ Aerospace instrumentation ■ Nuclear and high energy physics ■ Harsh radiation environments ■ ADC drivers Table 1. 8 Device summary(1) Reference SMD Quality level RHF350K1 - Engineering model RHF350K-01V 5962F0723201VXC Package Lead finish Mass EPPL Temperature range Flat-8S Gold 0.45 g - -55 °C to +125 °C QML-V model 1. Contact ST sales for information about the specific conditions for products in QML-Q versions. August 2012 This is information on a product in full production. Doc ID 15604 Rev 4 1/23 www.st.com 23 Contents RHF350 Contents 1 Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Power supply considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Single power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Noise measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 Measurement of the input voltage noise eN . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 Measurement of the negative input current noise iNn . . . . . . . . . . . . . . . 13 4.3 Measurement of the positive input current noise iNp . . . . . . . . . . . . . . . . 13 5 Intermodulation distortion product . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Inverting amplifier biasing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 Active filtering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Ceramic Flat-8S package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 9 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/23 Doc ID 15604 Rev 4 RHF350 1 Absolute maximum ratings and operating conditions Absolute maximum ratings and operating conditions Table 2. Absolute maximum ratings Symbol Value Unit 6 V +/-0.5 V +/-2.5 V -65 to +150 °C Maximum junction temperature 150 °C Rthja Flat-8 thermal resistance junction to ambient 50 °C/W Rthjc Flat-8 thermal resistance junction to case 30 °C/W Pmax Flat-8 maximum power dissipation(4) (Tamb = 25 °C) for Tj = 150 °C 830 mW HBM: human body model(5) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 2 0.5 kV MM: machine model(6) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 200 60 V CDM: charged device model(7) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 1.5 1.5 kV Latch-up immunity 200 mA VCC Vid Parameter Supply voltage(1) (2) Differential input voltage (3) Vin Input voltage range Tstg Storage temperature Tj ESD 1. All voltages values are measured with respect to the ground pin. 2. Differential voltage are non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of input and output voltage must never exceed VCC +0.3 V. 4. Short-circuits can cause excessive heating. Destructive dissipation can result from short-circuits on all amplifiers. 5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating. 6. This is a minimum value. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of connected pin combinations while the other pins are floating. 7. Charged device model: all pins and package are charged together to the specified voltage and then discharged directly to ground through only one pin. Table 3. Recommended operating conditions Symbol Parameter VCC Supply voltage Vicm Common mode input voltage TA Ambient temperature range Doc ID 15604 Rev 4 Value Unit 4.5 to 5.5 V -VCC +1.5 V to +VCC -1.5 V V -55 to +125 °C 3/23 Electrical characteristics RHF350 2 Electrical characteristics Note: All electrical parameters apply both pre and post irradiation. Post irradiation data are guaranteed by qualification, they are not tested in production. Table 4. Radiations TID Value Unit 300 krad 110 MeV.cm²/mg High dose rate (50 - 300 rad / sec.) up to Heavy-ions Table 5. SEL immunity (at 125 °C) up to SEU characterized up to Electrical characteristics for VCC = ±2.5 V, (unless otherwise specified) Symbol Parameter Test conditions Temp.(1) Min. Typ. Max. +125 °C -4 1 4 +25 °C -4 0.4 4 -55 °C -4 0.8 4 +125 °C 8.5 35 +25 °C 9 35 -55 °C 9 35 +125 °C 2.5 25 +25 °C 2 20 -55 °C 1.8 25 Unit DC performance Vio Iib+ Iib- CMR SVR PSRR ICC 4/23 Input offset voltage Non-inverting input bias current Inverting input bias current Common mode rejection ratio 20 log (∆Vic/∆Vio) Supply voltage rejection ratio 20 log (∆VCC/∆Vio) Power supply rejection ratio 20 log (∆VCC/∆Vout) Supply current ∆Vic = ±1 V ∆VCC = 3.5 V to 5 V ∆VCC = 200 mVpp at 1 kHz No load Doc ID 15604 Rev 4 +125 °C 50 55 +25 °C 54 57 -55 °C 50 58 +125 °C 55 87 +25 °C 68 87 -55 °C 55 88 mV µA µA dB dB +25 °C 51 dB +125 °C 3.8 4.9 +25 °C 4 4.9 -55 °C 4 4.9 mA RHF350 Table 5. Electrical characteristics Electrical characteristics for VCC = ±2.5 V, (unless otherwise specified) (continued) Symbol Parameter Test conditions Temp.(1) Min. Typ. +125 °C 150 244 +25 °C 170 260 -55 °C 150 276 Max. Unit Dynamic performance and output characteristics ROL ∆Vout= ±1 V, RL = 100 Ω Transimpedance Bw Small signal -3 dB bandwidth RL = 100 Ω, AV = +1 +25 °C 550 RL = 100 Ω, AV = +2 +25 °C 390 RL = 100 Ω, AV = +10 +25 °C 125 RL = 100 Ω, AV = -2 Vout = 2 Vpp, AV = +2, RL = 100 Ω Slew rate(2) SR High level output voltage VOH RL = 100 Ω kΩ MHz +125 °C 250 380 +25 °C 250 425 -55 °C 250 466 +25 °C 700 940 +125 °C 1.3 1.6 +25 °C 1.44 1.55 -55 °C 1.3 1.5 V/µs V VOL High level output voltage Isink Output sink current RL = 100 Ω Output to GND +125 °C -1.6 +25 °C -1.55 -1.44 -55 °C -1.5 +125 °C 135 210 +25 °C 135 225 -55 °C 135 225 -1.3 -1.3 mA Isource Output source current Output to GND +125 °C -200 -140 +25 °C -225 -140 -55 °C -240 -140 1. Tmin < Tamb < Tmax: worst case of the parameter on a standard sample across the temperature range. The evaluation is done on 50 units in the SO-8 plastic package. 2. Not physically tested. Guaranteed by design, measured on bench. Table 6. Closed-loop gain and feedback components Gain (V/V) +1 -1 +2 -2 + 10 - 10 Rfb (Ω) 820 300 300 300 300 300 Doc ID 15604 Rev 4 5/23 Electrical characteristics Frequency response, positive gain Figure 2. Flatness, gain = +1 Figure 3. Flatness, gain = +2 Figure 4. Flatness, gain = +4 Figure 5. Flatness, gain = +10 Figure 6. Slew rate Gain (dB) Figure 1. RHF350 1.50 Output response (V ) 1.25 1.00 0.75 0.50 0.25 Gain = +2 VCC = +5 V Load = 100 0.00 -2 ns -1 ns 0s Time (ns) 6/23 Doc ID 15604 Rev 4 1 ns 2 ns RHF350 Electrical characteristics Figure 7. Isink Figure 8. Isource Figure 9. Input current noise vs. frequency Figure 10. Input voltage noise vs. frequency 'AIND" .ONINVERTINGINPUTINSHORTCIRCUIT 6##6 Figure 11. Quiescent current vs. VCC Figure 12. Noise 5 4 ICC(+) 3 ICC (mA) 2 1 Gain = +2 VCC = 5 V Input to ground, no load 0 -1 -2 -3 ICC(-) -4 VCC = 5 V -5 0.0 0.5 1.0 1.5 2.0 2.5 VCC (V) Doc ID 15604 Rev 4 7/23 Electrical characteristics RHF350 Figure 13. Distortion vs. output amplitude Figure 14. Output amplitude vs. load Max. output amplitude (Vp-p) 4.0 ($ ($ 'AIN 6## 6 &-(Z ,OAD 3.5 3.0 2.5 Gain = +2 VCC = 5 V Load = 100 2.0 10 Figure 15. Reverse isolation vs. frequency 100 1k 10k 100k Figure 16. SVR vs. temperature 0 90 85 -20 Isolation (dB) 80 SVR (dB) -40 -60 75 70 65 60 -80 Small signal VCC = 5 V Load = 100 -100 1M 55 VCC = 5 V Load = 100 50 10M 100M 1G -40 -20 0 20 40 60 Frequency (Hz) Temperature (°C) Figure 17. Iout vs. temperature Figure 18. ROL vs. temperature 80 100 120 80 100 120 1000 340 800 Isource 320 600 300 200 ROL (M ) Iout (mA) 400 0 -200 -400 Isink 280 260 240 -600 -800 220 Output: short-circuit VCC = 5 V 200 -1000 -40 -20 0 20 40 60 80 100 Open loop VCC = 5 V 120 8/23 -40 -20 0 20 40 60 Temperature (°C) Temperature (°C) Doc ID 15604 Rev 4 RHF350 Electrical characteristics Figure 19. CMR vs. temperature Figure 20. Ibias vs. temperature 70 14 68 12 66 Ib+ 10 64 IBI AS ( A) CMR (dB) 8 62 60 58 6 4 Ib- 2 56 0 54 52 Gain = +2 VCC = 5 V Load = 100 -2 VCC = 5 V Load = 100 Ω -4 50 -40 -20 0 20 40 60 80 100 120 -40 -20 0 Temperature (°C) 20 40 60 80 100 120 Temperature (°C) Figure 21. Vio vs. temperature Figure 22. VOH and VOL vs. temperature 1000 800 VIO 600 400 200 Open loop VCC = 5 V Load = 100 0 -40 -20 0 20 40 Temperature 60 80 100 120 ) Figure 23. ICC vs. temperature 6 4 ICC(+) 2 ICC (mA) 0 -2 ICC(-) -4 -6 -8 Gain = +2 VCC = 5 V no load In+/In- to GND -10 -40 -20 0 20 40 Temperature 60 80 100 120 ) Doc ID 15604 Rev 4 9/23 Power supply considerations 3 RHF350 Power supply considerations Correct power supply bypassing is very important to optimize performance in highfrequency ranges. The bypass capacitors should be placed as close as possible to the IC pins to improve high-frequency bypassing. A capacitor greater than 1 µF is necessary to minimize the distortion. For better quality bypassing, a 10 nF capacitor can be added. It should also be placed as close as possible to the IC pins. The bypass capacitors must be incorporated for both the negative and positive supply. Figure 24. Circuit for power supply bypassing 10 µF + 10 nF + - 10 nF 10 µF + AM00835 Single power supply In the event that a single supply system is used, biasing is necessary to obtain a positive output dynamic range between the 0 V and +VCC supply rails. Considering the values of VOH and VOL, the amplifier provides an output swing from +0.9 V to +4.1 V on a 100 Ω load. The amplifier must be biased with a mid-supply (nominally +VCC/2), in order to maintain the DC component of the signal at this value. Several options are possible to provide this bias supply, such as a virtual ground using an operational amplifier or a two-resistance divider (which is the cheapest solution). A high resistance value is required to limit the current consumption. On the other hand, the current must be high enough to bias the non-inverting input of the amplifier. If we consider this bias current (35 µA maximum) as 1% of the current through the resistance divider, to keep a stable mid-supply two resistances of 750 Ω can be used. The input provides a high-pass filter with a break frequency below 10 Hz which is necessary to remove the original 0 V DC component of the input signal, and to set it at +VCC/2. Figure 25 on page 11 illustrates a 5 V single power supply configuration. A capacitor CG is added to the gain network to ensure a unity gain at low frequencies in order to keep the right DC component at the output. CG contributes to a high-pass filter with Rfb//RG and its value is calculated with regard to the cut-off frequency of this low-pass filter. 10/23 Doc ID 15604 Rev 4 RHF350 Power supply considerations Figure 25. Circuit for +5 V single supply +5 V 10 µF + IN +5 V Rin 1 kΩ 100 µ F _ OUT 100 Ω R1 750 Ω Rfb R2 750 Ω + 1 µF RG 10 nF + CG AM00844 Doc ID 15604 Rev 4 11/23 Noise measurements 4 RHF350 Noise measurements The noise model is shown in Figure 26. ● eN: input voltage noise of the amplifier. ● iNn: negative input current noise of the amplifier. ● iNp: positive input current noise of the amplifier. Figure 26. Noise model + Output iN + R3 HP3577 Input noise: 8 nV/√Hz _ N3 eN iN - R2 N2 R1 N1 AM00837 The thermal noise of a resistance R is: Equation 1 4kTR∆F where ∆F is the specified bandwidth. On a 1 Hz bandwidth the thermal noise is reduced to: Equation 2 4kTR where k is the Boltzmann's constant, equal to 1,374.E(-23)J/°K. T is the temperature (°K). The output noise eNo is calculated using the superposition theorem. However, eNo is not the simple sum of all noise sources, but rather the square root of the sum of the square of each noise source, as shown in Equation 3. Equation 3 eNo = 12/23 2 2 2 2 2 V1 + V2 + V3 + V4 + V5 + V6 2 Doc ID 15604 Rev 4 RHF350 Noise measurements Equation 4 2 2 2 2 2 2 2 2 2 R2 R2 2 eNo = eN × g + iNn × R2 + iNp × R3 × g + -------- × 4kTR1 + 4kTR2 + 1 + -------- × 4kTR3 R1 R1 The input noise of the instrumentation must be extracted from the measured noise value. The real output noise value of the driver is: Equation 5 eNo = 2 ( Measured ) – ( instrumentation ) 2 The input noise is called equivalent input noise because it is not directly measured but is evaluated from the measurement of the output divided by the closed loop gain (eNo/g). After simplification of the fourth and the fifth term of Equation 4 we obtain: Equation 6 2 2 2 2 2 2 2 2 R2 2 eNo = eN × g + iNn × R2 + iNp × R3 × g + g × 4kTR2 + 1 + -------- × 4kTR3 R1 4.1 Measurement of the input voltage noise eN If we assume a short-circuit on the non-inverting input (R3 = 0), from Equation 6 we can derive: Equation 7 eNo = 2 2 2 2 eN × g + iNn × R2 + g × 4kTR2 In order to easily extract the value of eN, the resistance R2 will be chosen to be as low as possible. On the other hand, the gain must be large enough. R3 = 0, gain: g = 100 4.2 Measurement of the negative input current noise iNn To measure the negative input current noise iNn, we set R3 = 0 and use Equation 7. This time, the gain must be lower in order to decrease the thermal noise contribution. R3 = 0, gain: g = 10 4.3 Measurement of the positive input current noise iNp To extract iNp from Equation 5, a resistance R3 is connected to the non-inverting input. The value of R3 must be chosen in order to keep its thermal noise contribution as low as possible against the iNp contribution. R3 = 100 W, gain: g = 10 Doc ID 15604 Rev 4 13/23 Intermodulation distortion product 5 RHF350 Intermodulation distortion product The non-ideal output of the amplifier can be described by the following series of equations. Equation 8 V out = C 0 + C 1 Vin + C 2 V 2 in + …+ C n V n in Where the input is Vin = Asinωt, C0 is the DC component, C1 (Vin) is the fundamental and Cn is the amplitude of the harmonics of the output signal Vout. A one-frequency (one-tone) input signal contributes to harmonic distortion. A two-tone input signal contributes to harmonic distortion and to the intermodulation product. The study of the intermodulation and distortion for a two-tone input signal is the first step in characterizing the driving capability of multi-tone input signals. In this case: Equation 9 V in = A sin ω1 t + A sin ω2 t then: Equation 10 2 V out = C 0 + C 1 ( A sin ω1 t + A sin ω2 t ) + C 2 ( A sin ω1 t + A sin ω2 t ) …+ C n ( A sin ω1 t + A sin ω2 t ) n From this expression, we can extract the distortion terms, and the intermodulation terms from a single sine wave. ● Second-order intermodulation terms IM2 by the frequencies (ω1 - ω2) and (ω1 +ω2) with an amplitude of C2A2. ● Third-order intermodulation terms IM3 by the frequencies (2ω1 - ω2), (2ω1 +ω2), (−ω1 + 2ω2) and (ω1 + 2ω2) with an amplitude of (3/4)C3A3. The intermodulation product of the driver is measured by using the driver as a mixer in a summing amplifier configuration (Figure 27). In this way, the non-linearity problem of an external mixing device is avoided. 14/23 Doc ID 15604 Rev 4 RHF350 Intermodulation distortion product Figure 27. Inverting summing amplifier Vin1 R1 Vin2 R2 Rfb _ Vout + 100Ω R Doc ID 15604 Rev 4 15/23 Inverting amplifier biasing 6 RHF350 Inverting amplifier biasing A resistance is necessary to achieve good input biasing, such as resistance R shown in Figure 28. The value of this resistance is calculated from the negative and positive input bias current. The aim is to compensate for the offset bias current, which can affect the input offset voltage and the output DC component. Assuming Iib-, Iib+, Rin, Rfb and a 0 V output, the resistance R is: Equation 11 R in × R fb R = ----------------------R in + R fb Figure 28. Compensation of the input bias current Rfb Iib - Rin _ VCC+ Output + Load VCC - Iib + R AM00839 16/23 Doc ID 15604 Rev 4 RHF350 7 Active filtering Active filtering Figure 29. Low-pass active filtering, Sallen-Key C1 R1 R2 + IN OUT C2 _ RG 100 Ω Rfb AM00840 From the resistors Rfb and RG we can directly calculate the gain of the filter in a classic noninverting amplification configuration. Equation 12 R fb A V = g = 1 + -------Rg We assume the following expression is the response of the system. Equation 13 Vout jω g T jω = ---------------- = ----------------------------------------Vin jω jω ( jω) 2 1 + 2ζ ----- + -----------ωc ω 2 c The cut-off frequency is not gain-dependent and so becomes: Equation 14 1 ωc = ------------------------------------R1R2C1C2 The damping factor is calculated by Equation 15: Equation 15 1 ζ = --- ωc ( C 1 R 1 + C 1 R 2 + C 2 R 1 – C 1 R 1 g ) 2 Doc ID 15604 Rev 4 17/23 Active filtering RHF350 The higher the gain, the more sensitive the damping factor is. When the gain is higher than 1, it is preferable to use very stable resistor and capacitor values. In the case of R1= R2 = R: Equation 16 R fb 2C 2 – C 1 -------Rg ζ = -------------------------------2 C1 C2 Due to a limited selection of capacitor values in comparison with resistor values, we can set C1= C2 = C, so that: Equation 17 R fb 2R 2 – R 1 -------Rg ζ = -------------------------------2 R1 R2 18/23 Doc ID 15604 Rev 4 RHF350 8 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 15604 Rev 4 19/23 Package information RHF350 Ceramic Flat-8S package information Figure 30. Ceramic Flat-8S package outline 1. The upper metallic lid is not electrically connected to any pin, nor to the IC dice inside the package. Table 7. Ceramic Flat-8S package mechanical data Dimensions Symbol Inches Min. Typ. Max. Min. Typ. Max. A 2.24 2.44 2.64 0.088 0.096 0.104 b 0.38 0.43 0.48 0.015 0.017 0.019 c 0.10 0.13 0.16 0.004 0.005 0.006 D 6.35 6.48 6.61 0.250 0.255 0.260 E 6.35 6.48 6.61 0.250 0.255 0.260 E2 4.32 4.45 4.58 0.170 0.175 0.180 E3 0.88 1.01 1.14 0.035 0.040 0.045 e 1.27 0.050 L 3.00 0.118 Q 0.66 0.79 0.92 0.026 0.031 0.092 S1 0.92 1.12 1.32 0.036 0.044 0.052 N 20/23 Millimeters 08 Doc ID 15604 Rev 4 08 RHF350 Ordering information 9 Ordering information Table 8. Order codes Order code Description RHF350K1 Engineering model RHF350K-01V Temperature range Package -55 °C to +125 °C Flat-8S QMLV-Flight Marking Packing RHF350K1 Conductive strip pack 5962F0723201VXC Doc ID 15604 Rev 4 21/23 Revision history 10 RHF350 Revision history Table 9. 22/23 Document revision history Date Revision Changes 20-May-2009 1 Initial release. 12-Jul-2010 2 Added Mass in Features on cover page. Added Table 1: Device summary on cover page, with full ordering information. Changed temperature limits in Table 5. 27-Jul-2011 3 Added Note: on page 18 and in the "Pin connections" diagram on the coverpage. 03-Aug-2012 4 UpdatedTable 5. with values after radiations. Replaced note on page 18 with footnote. Minor corrections throughout document. Doc ID 15604 Rev 4 RHF350 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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