STMICROELECTRONICS RHF350

RHF350
Rad-hard 550 MHz low noise operational amplifier
Datasheet − production data
Features
Ceramic Flat-8S
■
Bandwidth: 550 MHz (unity gain)
■
Quiescent current: 4 mA
■
Slew rate: 940 V/µs
■
Input noise: 1.5 nV/√Hz
■
Distortion: SFDR = -66 dBc (10 MHz, 1Vpp)
■
2.8 Vpp minimum output swing on 100 Ω load
for a +5 V supply
■
5 V power supply
NC
300 krad MIL-STD-883 1019 ELDRS free
compliant
IN -
NC
+VCC
IN +
OUT
■
■
Pin connections
(top view)
1
NC
-VCC
SEL immune at 125 °C, LET up to
110 MEV.cm2/mg
4
5
The upper metallic lid is not electrically connected to any
pin, nor to the IC die inside the package.
■
SET characterized, LET up to
110 MEV.cm2/mg
■
QMLV qualified
■
Available in ceramic Flat-8S package
Description
The RHF350 device is a current feedback
operational amplifier that uses very high speed
complementary technology to provide
a bandwidth of up to 550 MHz while drawing only
4 mA of quiescent current. With a slew rate of
940 V/µs and an output stage optimized for
driving a standard 100 Ω load, this circuit is highly
suitable for applications where speed and powersaving are the main requirements. The device is
a single operator available in a Flat-8 hermetic
ceramic package, saving board space as well as
providing excellent thermal and dynamic
performance.
Applications
■
Communication satellites
■
Space data acquisition systems
■
Aerospace instrumentation
■
Nuclear and high energy physics
■
Harsh radiation environments
■
ADC drivers
Table 1.
8
Device summary(1)
Reference
SMD
Quality level
RHF350K1
-
Engineering model
RHF350K-01V 5962F0723201VXC
Package
Lead
finish
Mass EPPL Temperature range
Flat-8S
Gold
0.45 g
-
-55 °C to +125 °C
QML-V model
1. Contact ST sales for information about the specific conditions for products in QML-Q versions.
August 2012
This is information on a product in full production.
Doc ID 15604 Rev 4
1/23
www.st.com
23
Contents
RHF350
Contents
1
Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Power supply considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Single power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Noise measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
Measurement of the input voltage noise eN . . . . . . . . . . . . . . . . . . . . . . . 13
4.2
Measurement of the negative input current noise iNn . . . . . . . . . . . . . . . 13
4.3
Measurement of the positive input current noise iNp . . . . . . . . . . . . . . . . 13
5
Intermodulation distortion product . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Inverting amplifier biasing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7
Active filtering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Ceramic Flat-8S package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
9
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/23
Doc ID 15604 Rev 4
RHF350
1
Absolute maximum ratings and operating conditions
Absolute maximum ratings and operating conditions
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
6
V
+/-0.5
V
+/-2.5
V
-65 to +150
°C
Maximum junction temperature
150
°C
Rthja
Flat-8 thermal resistance junction to ambient
50
°C/W
Rthjc
Flat-8 thermal resistance junction to case
30
°C/W
Pmax
Flat-8 maximum power dissipation(4) (Tamb = 25 °C) for
Tj = 150 °C
830
mW
HBM: human body model(5)
pins 1, 4, 5, 6, 7 and 8
pins 2 and 3
2
0.5
kV
MM: machine model(6)
pins 1, 4, 5, 6, 7 and 8
pins 2 and 3
200
60
V
CDM: charged device model(7)
pins 1, 4, 5, 6, 7 and 8
pins 2 and 3
1.5
1.5
kV
Latch-up immunity
200
mA
VCC
Vid
Parameter
Supply voltage(1)
(2)
Differential input voltage
(3)
Vin
Input voltage range
Tstg
Storage temperature
Tj
ESD
1. All voltages values are measured with respect to the ground pin.
2. Differential voltage are non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output voltage must never exceed VCC +0.3 V.
4. Short-circuits can cause excessive heating. Destructive dissipation can result from short-circuits on all
amplifiers.
5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a
1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations
while the other pins are floating.
6. This is a minimum value.
Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of
connected pin combinations while the other pins are floating.
7. Charged device model: all pins and package are charged together to the specified voltage and then
discharged directly to ground through only one pin.
Table 3.
Recommended operating conditions
Symbol
Parameter
VCC
Supply voltage
Vicm
Common mode input voltage
TA
Ambient temperature range
Doc ID 15604 Rev 4
Value
Unit
4.5 to 5.5
V
-VCC +1.5 V to
+VCC -1.5 V
V
-55 to +125
°C
3/23
Electrical characteristics
RHF350
2
Electrical characteristics
Note:
All electrical parameters apply both pre and post irradiation. Post irradiation data are
guaranteed by qualification, they are not tested in production.
Table 4.
Radiations
TID
Value
Unit
300
krad
110
MeV.cm²/mg
High dose rate (50 - 300 rad / sec.) up to
Heavy-ions
Table 5.
SEL immunity (at 125 °C) up to
SEU characterized up to
Electrical characteristics for VCC = ±2.5 V, (unless otherwise specified)
Symbol
Parameter
Test conditions
Temp.(1)
Min.
Typ.
Max.
+125 °C
-4
1
4
+25 °C
-4
0.4
4
-55 °C
-4
0.8
4
+125 °C
8.5
35
+25 °C
9
35
-55 °C
9
35
+125 °C
2.5
25
+25 °C
2
20
-55 °C
1.8
25
Unit
DC performance
Vio
Iib+
Iib-
CMR
SVR
PSRR
ICC
4/23
Input offset voltage
Non-inverting input bias
current
Inverting input bias current
Common mode rejection ratio
20 log (∆Vic/∆Vio)
Supply voltage rejection ratio
20 log (∆VCC/∆Vio)
Power supply rejection ratio
20 log (∆VCC/∆Vout)
Supply current
∆Vic = ±1 V
∆VCC = 3.5 V to 5 V
∆VCC = 200 mVpp at 1 kHz
No load
Doc ID 15604 Rev 4
+125 °C
50
55
+25 °C
54
57
-55 °C
50
58
+125 °C
55
87
+25 °C
68
87
-55 °C
55
88
mV
µA
µA
dB
dB
+25 °C
51
dB
+125 °C
3.8
4.9
+25 °C
4
4.9
-55 °C
4
4.9
mA
RHF350
Table 5.
Electrical characteristics
Electrical characteristics for VCC = ±2.5 V, (unless otherwise specified) (continued)
Symbol
Parameter
Test conditions
Temp.(1)
Min.
Typ.
+125 °C
150
244
+25 °C
170
260
-55 °C
150
276
Max.
Unit
Dynamic performance and output characteristics
ROL
∆Vout= ±1 V,
RL = 100 Ω
Transimpedance
Bw
Small signal -3 dB bandwidth
RL = 100 Ω, AV = +1
+25 °C
550
RL = 100 Ω, AV = +2
+25 °C
390
RL = 100 Ω, AV = +10
+25 °C
125
RL = 100 Ω, AV = -2
Vout = 2 Vpp,
AV = +2, RL = 100 Ω
Slew rate(2)
SR
High level output voltage
VOH
RL = 100 Ω
kΩ
MHz
+125 °C
250
380
+25 °C
250
425
-55 °C
250
466
+25 °C
700
940
+125 °C
1.3
1.6
+25 °C
1.44
1.55
-55 °C
1.3
1.5
V/µs
V
VOL
High level output voltage
Isink
Output sink current
RL = 100 Ω
Output to GND
+125 °C
-1.6
+25 °C
-1.55 -1.44
-55 °C
-1.5
+125 °C
135
210
+25 °C
135
225
-55 °C
135
225
-1.3
-1.3
mA
Isource
Output source current
Output to GND
+125 °C
-200
-140
+25 °C
-225
-140
-55 °C
-240
-140
1. Tmin < Tamb < Tmax: worst case of the parameter on a standard sample across the temperature range. The evaluation is
done on 50 units in the SO-8 plastic package.
2. Not physically tested. Guaranteed by design, measured on bench.
Table 6.
Closed-loop gain and feedback components
Gain (V/V)
+1
-1
+2
-2
+ 10
- 10
Rfb (Ω)
820
300
300
300
300
300
Doc ID 15604 Rev 4
5/23
Electrical characteristics
Frequency response, positive gain Figure 2.
Flatness, gain = +1
Figure 3.
Flatness, gain = +2
Figure 4.
Flatness, gain = +4
Figure 5.
Flatness, gain = +10
Figure 6.
Slew rate
Gain (dB)
Figure 1.
RHF350
1.50
Output response (V )
1.25
1.00
0.75
0.50
0.25
Gain = +2
VCC = +5 V
Load = 100
0.00
-2 ns
-1 ns
0s
Time (ns)
6/23
Doc ID 15604 Rev 4
1 ns
2 ns
RHF350
Electrical characteristics
Figure 7.
Isink
Figure 8.
Isource
Figure 9.
Input current noise vs. frequency
Figure 10. Input voltage noise vs. frequency
'AIND"
.ONINVERTINGINPUTINSHORTCIRCUIT
6##6
Figure 11. Quiescent current vs. VCC
Figure 12. Noise
5
4
ICC(+)
3
ICC (mA)
2
1
Gain = +2
VCC = 5 V
Input to ground, no load
0
-1
-2
-3
ICC(-)
-4
VCC = 5 V
-5
0.0
0.5
1.0
1.5
2.0
2.5
VCC (V)
Doc ID 15604 Rev 4
7/23
Electrical characteristics
RHF350
Figure 13. Distortion vs. output amplitude
Figure 14. Output amplitude vs. load
Max. output amplitude (Vp-p)
4.0
($
($
'AIN
6## 6
&-(Z
,OAD
3.5
3.0
2.5
Gain = +2
VCC = 5 V
Load = 100
2.0
10
Figure 15. Reverse isolation vs. frequency
100
1k
10k
100k
Figure 16. SVR vs. temperature
0
90
85
-20
Isolation (dB)
80
SVR (dB)
-40
-60
75
70
65
60
-80
Small signal
VCC = 5 V
Load = 100
-100
1M
55
VCC = 5 V
Load = 100
50
10M
100M
1G
-40
-20
0
20
40
60
Frequency (Hz)
Temperature (°C)
Figure 17. Iout vs. temperature
Figure 18. ROL vs. temperature
80
100
120
80
100
120
1000
340
800
Isource
320
600
300
200
ROL (M )
Iout (mA)
400
0
-200
-400
Isink
280
260
240
-600
-800
220
Output: short-circuit
VCC = 5 V
200
-1000
-40
-20
0
20
40
60
80
100
Open loop
VCC = 5 V
120
8/23
-40
-20
0
20
40
60
Temperature (°C)
Temperature (°C)
Doc ID 15604 Rev 4
RHF350
Electrical characteristics
Figure 19. CMR vs. temperature
Figure 20. Ibias vs. temperature
70
14
68
12
66
Ib+
10
64
IBI AS ( A)
CMR (dB)
8
62
60
58
6
4
Ib-
2
56
0
54
52
Gain = +2
VCC = 5 V
Load = 100
-2
VCC = 5 V
Load = 100 Ω
-4
50
-40
-20
0
20
40
60
80
100
120
-40
-20
0
Temperature (°C)
20
40
60
80
100
120
Temperature (°C)
Figure 21. Vio vs. temperature
Figure 22. VOH and VOL vs. temperature
1000
800
VIO
600
400
200
Open loop
VCC = 5 V
Load = 100
0
-40
-20
0
20
40
Temperature
60
80
100
120
)
Figure 23. ICC vs. temperature
6
4
ICC(+)
2
ICC (mA)
0
-2
ICC(-)
-4
-6
-8
Gain = +2
VCC = 5 V
no load
In+/In- to GND
-10
-40
-20
0
20
40
Temperature
60
80
100
120
)
Doc ID 15604 Rev 4
9/23
Power supply considerations
3
RHF350
Power supply considerations
Correct power supply bypassing is very important to optimize performance in highfrequency ranges. The bypass capacitors should be placed as close as possible to the IC
pins to improve high-frequency bypassing. A capacitor greater than 1 µF is necessary to
minimize the distortion. For better quality bypassing, a 10 nF capacitor can be added. It
should also be placed as close as possible to the IC pins. The bypass capacitors must be
incorporated for both the negative and positive supply.
Figure 24. Circuit for power supply bypassing
10 µF
+
10 nF
+
-
10 nF
10 µF
+
AM00835
Single power supply
In the event that a single supply system is used, biasing is necessary to obtain a positive
output dynamic range between the 0 V and +VCC supply rails. Considering the values of
VOH and VOL, the amplifier provides an output swing from +0.9 V to +4.1 V on a 100 Ω load.
The amplifier must be biased with a mid-supply (nominally +VCC/2), in order to maintain the
DC component of the signal at this value. Several options are possible to provide this bias
supply, such as a virtual ground using an operational amplifier or a two-resistance divider
(which is the cheapest solution). A high resistance value is required to limit the current
consumption. On the other hand, the current must be high enough to bias the non-inverting
input of the amplifier. If we consider this bias current (35 µA maximum) as 1% of the current
through the resistance divider, to keep a stable mid-supply two resistances of 750 Ω can be
used.
The input provides a high-pass filter with a break frequency below 10 Hz which is necessary
to remove the original 0 V DC component of the input signal, and to set it at +VCC/2.
Figure 25 on page 11 illustrates a 5 V single power supply configuration. A capacitor CG is
added to the gain network to ensure a unity gain at low frequencies in order to keep the right
DC component at the output. CG contributes to a high-pass filter with Rfb//RG and its value is
calculated with regard to the cut-off frequency of this low-pass filter.
10/23
Doc ID 15604 Rev 4
RHF350
Power supply considerations
Figure 25. Circuit for +5 V single supply
+5 V
10 µF
+
IN
+5 V
Rin
1 kΩ
100 µ F
_
OUT
100 Ω
R1
750 Ω
Rfb
R2
750 Ω
+ 1 µF
RG
10 nF
+
CG
AM00844
Doc ID 15604 Rev 4
11/23
Noise measurements
4
RHF350
Noise measurements
The noise model is shown in Figure 26.
●
eN: input voltage noise of the amplifier.
●
iNn: negative input current noise of the amplifier.
●
iNp: positive input current noise of the amplifier.
Figure 26. Noise model
+
Output
iN +
R3
HP3577
Input noise:
8 nV/√Hz
_
N3
eN
iN -
R2
N2
R1
N1
AM00837
The thermal noise of a resistance R is:
Equation 1
4kTR∆F
where ∆F is the specified bandwidth.
On a 1 Hz bandwidth the thermal noise is reduced to:
Equation 2
4kTR
where k is the Boltzmann's constant, equal to 1,374.E(-23)J/°K. T is the temperature (°K).
The output noise eNo is calculated using the superposition theorem. However, eNo is not
the simple sum of all noise sources, but rather the square root of the sum of the square of
each noise source, as shown in Equation 3.
Equation 3
eNo =
12/23
2
2
2
2
2
V1 + V2 + V3 + V4 + V5 + V6
2
Doc ID 15604 Rev 4
RHF350
Noise measurements
Equation 4
2
2
2
2
2
2
2
2
2 R2
R2 2
eNo = eN × g + iNn × R2 + iNp × R3 × g + -------- × 4kTR1 + 4kTR2 + 1 + -------- × 4kTR3
R1
R1
The input noise of the instrumentation must be extracted from the measured noise value.
The real output noise value of the driver is:
Equation 5
eNo =
2
( Measured ) – ( instrumentation )
2
The input noise is called equivalent input noise because it is not directly measured but is
evaluated from the measurement of the output divided by the closed loop gain (eNo/g).
After simplification of the fourth and the fifth term of Equation 4 we obtain:
Equation 6
2
2
2
2
2
2
2
2
R2 2
eNo = eN × g + iNn × R2 + iNp × R3 × g + g × 4kTR2 + 1 + -------- × 4kTR3
R1
4.1
Measurement of the input voltage noise eN
If we assume a short-circuit on the non-inverting input (R3 = 0), from Equation 6 we can
derive:
Equation 7
eNo =
2
2
2
2
eN × g + iNn × R2 + g × 4kTR2
In order to easily extract the value of eN, the resistance R2 will be chosen to be as low as
possible. On the other hand, the gain must be large enough.
R3 = 0, gain: g = 100
4.2
Measurement of the negative input current noise iNn
To measure the negative input current noise iNn, we set R3 = 0 and use Equation 7. This
time, the gain must be lower in order to decrease the thermal noise contribution.
R3 = 0, gain: g = 10
4.3
Measurement of the positive input current noise iNp
To extract iNp from Equation 5, a resistance R3 is connected to the non-inverting input. The
value of R3 must be chosen in order to keep its thermal noise contribution as low as
possible against the iNp contribution.
R3 = 100 W, gain: g = 10
Doc ID 15604 Rev 4
13/23
Intermodulation distortion product
5
RHF350
Intermodulation distortion product
The non-ideal output of the amplifier can be described by the following series of equations.
Equation 8
V out = C 0 + C 1 Vin + C 2 V
2
in
+ …+ C n V
n
in
Where the input is Vin = Asinωt, C0 is the DC component, C1 (Vin) is the fundamental and Cn
is the amplitude of the harmonics of the output signal Vout.
A one-frequency (one-tone) input signal contributes to harmonic distortion. A two-tone input
signal contributes to harmonic distortion and to the intermodulation product.
The study of the intermodulation and distortion for a two-tone input signal is the first step in
characterizing the driving capability of multi-tone input signals.
In this case:
Equation 9
V in = A sin ω1 t + A sin ω2 t
then:
Equation 10
2
V out = C 0 + C 1 ( A sin ω1 t + A sin ω2 t ) + C 2 ( A sin ω1 t + A sin ω2 t ) …+ C n ( A sin ω1 t + A sin ω2 t )
n
From this expression, we can extract the distortion terms, and the intermodulation terms
from a single sine wave.
●
Second-order intermodulation terms IM2 by the frequencies (ω1 - ω2) and (ω1 +ω2) with
an amplitude of C2A2.
●
Third-order intermodulation terms IM3 by the frequencies (2ω1 - ω2), (2ω1 +ω2),
(−ω1 + 2ω2) and (ω1 + 2ω2) with an amplitude of (3/4)C3A3.
The intermodulation product of the driver is measured by using the driver as a mixer in
a summing amplifier configuration (Figure 27). In this way, the non-linearity problem of an
external mixing device is avoided.
14/23
Doc ID 15604 Rev 4
RHF350
Intermodulation distortion product
Figure 27. Inverting summing amplifier
Vin1
R1
Vin2
R2
Rfb
_
Vout
+
100Ω
R
Doc ID 15604 Rev 4
15/23
Inverting amplifier biasing
6
RHF350
Inverting amplifier biasing
A resistance is necessary to achieve good input biasing, such as resistance R shown in
Figure 28.
The value of this resistance is calculated from the negative and positive input bias current.
The aim is to compensate for the offset bias current, which can affect the input offset voltage
and the output DC component. Assuming Iib-, Iib+, Rin, Rfb and a 0 V output, the resistance
R is:
Equation 11
R in × R fb
R = ----------------------R in + R fb
Figure 28. Compensation of the input bias current
Rfb
Iib -
Rin
_
VCC+
Output
+
Load
VCC -
Iib +
R
AM00839
16/23
Doc ID 15604 Rev 4
RHF350
7
Active filtering
Active filtering
Figure 29. Low-pass active filtering, Sallen-Key
C1
R1
R2
+
IN
OUT
C2
_
RG
100 Ω
Rfb
AM00840
From the resistors Rfb and RG we can directly calculate the gain of the filter in a classic noninverting amplification configuration.
Equation 12
R fb
A V = g = 1 + -------Rg
We assume the following expression is the response of the system.
Equation 13
Vout jω
g
T jω = ---------------- = ----------------------------------------Vin jω
jω ( jω) 2
1 + 2ζ ----- + -----------ωc ω 2
c
The cut-off frequency is not gain-dependent and so becomes:
Equation 14
1
ωc = ------------------------------------R1R2C1C2
The damping factor is calculated by Equation 15:
Equation 15
1
ζ = --- ωc ( C 1 R 1 + C 1 R 2 + C 2 R 1 – C 1 R 1 g )
2
Doc ID 15604 Rev 4
17/23
Active filtering
RHF350
The higher the gain, the more sensitive the damping factor is. When the gain is higher than
1, it is preferable to use very stable resistor and capacitor values. In the case of R1= R2 = R:
Equation 16
R fb
2C 2 – C 1 -------Rg
ζ = -------------------------------2 C1 C2
Due to a limited selection of capacitor values in comparison with resistor values, we can set
C1= C2 = C, so that:
Equation 17
R fb
2R 2 – R 1 -------Rg
ζ = -------------------------------2 R1 R2
18/23
Doc ID 15604 Rev 4
RHF350
8
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Doc ID 15604 Rev 4
19/23
Package information
RHF350
Ceramic Flat-8S package information
Figure 30. Ceramic Flat-8S package outline
1. The upper metallic lid is not electrically connected to any pin, nor to the IC dice inside the package.
Table 7.
Ceramic Flat-8S package mechanical data
Dimensions
Symbol
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
2.24
2.44
2.64
0.088
0.096
0.104
b
0.38
0.43
0.48
0.015
0.017
0.019
c
0.10
0.13
0.16
0.004
0.005
0.006
D
6.35
6.48
6.61
0.250
0.255
0.260
E
6.35
6.48
6.61
0.250
0.255
0.260
E2
4.32
4.45
4.58
0.170
0.175
0.180
E3
0.88
1.01
1.14
0.035
0.040
0.045
e
1.27
0.050
L
3.00
0.118
Q
0.66
0.79
0.92
0.026
0.031
0.092
S1
0.92
1.12
1.32
0.036
0.044
0.052
N
20/23
Millimeters
08
Doc ID 15604 Rev 4
08
RHF350
Ordering information
9
Ordering information
Table 8.
Order codes
Order code
Description
RHF350K1
Engineering
model
RHF350K-01V
Temperature
range
Package
-55 °C to
+125 °C
Flat-8S
QMLV-Flight
Marking
Packing
RHF350K1
Conductive
strip pack
5962F0723201VXC
Doc ID 15604 Rev 4
21/23
Revision history
10
RHF350
Revision history
Table 9.
22/23
Document revision history
Date
Revision
Changes
20-May-2009
1
Initial release.
12-Jul-2010
2
Added Mass in Features on cover page.
Added Table 1: Device summary on cover page, with full
ordering information.
Changed temperature limits in Table 5.
27-Jul-2011
3
Added Note: on page 18 and in the "Pin connections" diagram
on the coverpage.
03-Aug-2012
4
UpdatedTable 5. with values after radiations.
Replaced note on page 18 with footnote.
Minor corrections throughout document.
Doc ID 15604 Rev 4
RHF350
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 15604 Rev 4
23/23