US3415 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The US3415 is the highest performance trenc P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The US3415 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -20V 73mΩ -4A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge D z Excellent CdV/dt effect decline z 100% EAS Guaranteed G z Green Device Available z ESD Rating:3000V HBM D S G S Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A ID IDM TA=70°C TA=25°C Power Dissipation Units V ±8 V -4.0 Pulsed Drain Current B A Maximum -20 -30 1.4 PD TA=70°C Junction and Storage Temperature Range A -3.5 W 0.9 TJ, TSTG °C -55 to 150 Thermal Data Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State R JA R JL 1 Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W US3415 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250 A, VGS=0V -20 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250 A -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 VDS=0V, VGS=±8V Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A 43 48 60 VGS=-2.5V, I D=-4A 45 54 m VGS=-1.8V, I D=-2A 56 73 m TJ=125°C VDS=-5V, ID=-4A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance ±10 35 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance A -1 VSD Crss ±1 -0.55 Forward Transconductance Coss A -5 VDS=0V, VGS=±4.5V gFS IS Units V TJ=55°C VGS=-4.5V, I D=-4A Static Drain-Source On-Resistance Max -1 VDS=-16V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-4A 8 A m 16 -0.78 S -1 V -2.2 A 1450 pF 205 pF 160 pF 6.5 17.2 nC 1.3 nC Qgd Gate Drain Charge 4.5 nC tD(on) Turn-On DelayTime 9.5 ns tr Turn-On Rise Time 17 ns tD(off) Turn-Off DelayTime 94 ns tf Turn-Off Fall Time 35 ns trr Body Diode Reverse Recovery Time 31 Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/ s ns nC VGS=-4.5V, VDS=-10V, RL=2.5 , RGEN=3 IF=-4A, dI/dt=100A/ s 13.8 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 US3415 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 25 10 -4.5V -8V VDS=-5V -3.0V 20 8 15 6 -2.5V -ID(A) -ID (A) -2.0V 10 125°C 4 VGS=-1.5V 5 2 0 25°C 0 0 1 2 3 4 5 0 80 1.5 2 1.6 Normalized On-Resistance VGS=-1.8V RDS(ON) (m ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 VGS=-2.5V 40 VGS=-4.5V 20 ID=-4A, VGS=-2.5V 1.4 ID=-2A, VGS=-1.8V 1.2 ID=-4A, VGS=-4.5V 1.0 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1E+01 90 1E+00 80 ID=-4A 125°C 1E-01 70 -IS (A) RDS(ON) (m ) 0.5 1E-02 25°C 60 1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 125°C 50 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 40 25°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-05 30 1E-06 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 US3415 P-Ch 20V Fast Switching MOSFETs 2400 5 VDS=-10V ID=-4A 2000 Capacitance (pF) -VGS (Volts) 4 3 2 Ciss 1600 1200 800 Coss 1 400 Crss 0 0 0 5 10 15 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 40 Power (W) 1.0 10ms 1s 10s 20 10 0.1s DC 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.1 1 10 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse JA.R JA 1 PD 0.1 JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.Z R JA=90°C/W 0.01 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 20 30 100 s 1ms 0.1 15 TJ(Max)=150°C TA=25°C 10 s RDS(ON) limited 10.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics Ton Z -ID (Amps) 100.0 5 T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 100 1000