XINDEYI US3405

Unitpoower
US3405
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product US3405 is Pb-free
(meets ROHS & Sony 259 specifications). US3405
is aa Green
Green Product
Product ordering
ordering option.
option. US3405 and
is
O3405L are electrically identical.
VDS (V) = -30V
ID = -2.6 A (V GS = -10V)
RDS(ON) < 130m (VGS = -10V)
RDS(ON) < 180m (VGS = -4.5V)
D
TO-236
(SOT-23)
Top View
G
D
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
ID
IDM
B
±12
V
Junction and Storage Temperature Range
-30
1.4
W
1
TJ, TSTG
°C
-55 to 150
Symbol
t 10s
Steady-State
Steady-State
A
-2.2
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
-2.6
TA=25°C
Power Dissipation A
Maximum
-30
R
JA
R
JL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
Unitpoower
US3405
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250 A, VGS=0V
-30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250 A
-1.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-10
TJ=55°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VGS=-4.5V, ID=-2A
VDS=-5V, ID=-2.5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
±100
nA
-1.8
-2.3
V
102
130
137
180
A
TJ=125°C
RDS(ON)
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15V, ID=-2.5A
A
-5
VGS=-10V, ID=-2.6A
Output Capacitance
Units
-1
Zero Gate Voltage Drain Current
Coss
Max
V
VDS=-24V, VGS=0V
IDSS
IS
Typ
7
m
m
S
11
-0.83
m
-1
V
-2.2
A
481
pF
54
pF
34
pF
12
1.25
nC
1.75
nC
Qgd
Gate Drain Charge
4.35
nC
tD(on)
Turn-On DelayTime
8.9
ns
tr
Turn-On Rise Time
8.8
ns
tD(off)
Turn-Off DelayTime
23
ns
tf
Turn-Off Fall Time
6.9
ns
26
ns
nC
VGS=-10V, VDS=-15V, RL=6 ,
RGEN=6
trr
IF=-2.5A, dI/dt=100A/ s
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/ s
15.6
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. Unitpower DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. Unitpower RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Unitpoower
US3405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
20
VDS=-5V
-10V
8
15
6
-ID(A)
-ID (A)
-4.5V
10
-4V
125°C
-3.5V
5
4
2
25°C
VGS=-3V
0
0
0
1
2
3
4
5
0
0.5
1
200
Normalized On-Resistance
160
RDS(ON) (m )
2
2.5
3
3.5
4
4.5
5
1.6
180
140
VGS=-4.5V
120
100
VGS=-10V
80
60
40
VGS=-10V
1.4
VGS=-4.5V
1.2
ID=-2A
1
0.8
0
1
2
3
4
5
6
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
350
1.0E+00
-IS (A)
125°C
150
1.0E-05
0
1.0E-06
6
8
125
150
175
1.0E-03
50
4
100
1.0E-02
25°C
1.0E-04
25°C
2
75
1.0E-01
250
100
50
125°C
ID=-2A
200
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
400
300
RDS(ON) (m )
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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US3405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VDS=-15V
ID=-2.5A
Capacitance (pF)
-VGS (Volts)
4
3
2
1
0
600
Ciss
400
200
Coss
0
0
1
2
3
4
5
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=150°C
TA=25°C
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
40
TJ(Max)=150°C
TA=25°C
10 s
RDS(ON)
10.0 limited
30
100 s
Power (W)
100.0
-ID (Amps)
Crss
1ms
0.1s
10ms
1.0
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
JA.R JA
1
10
100
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
JA
Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.Z
R JA=90°C/W
0.1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
Z
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000