US3404 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The US3404 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US3404 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID 30V 43m 5.8A Applications z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Features Advanced high cell density Trench technology SOT23 Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline D Green Device Available G D S G S Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current Units V VGS ±20 V ID IDM 4.9 TA=25°C 5.8 TA=70°C B TA=25°C Power Dissipation Maximum 30 20 1.4 PD TA=70°C Junction and Storage Temperature Range A W 1 TJ, TSTG -55 to 150 °C Thermal Data Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W US3404 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol , unless otherwise noted) Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=250µA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.8A TJ=125°C VGS=4.5V, ID=5.0A Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=5.8A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 10 1.9 100 nA 3 V 22.5 28 31.3 38 34.5 43 VGS=10V, VDS=15V, ID=5.8A mΩ S 1 V 2.5 A 820 pF 102 pF 77 VGS=0V, VDS=0V, f=1MHz mΩ 14.5 680 VGS=0V, VDS=15V, f=1MHz µA A 0.76 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Units V 1 TJ=55°C gFS Max 30 VDS=24V, VGS=0V VGS(th) IS Typ pF 3 3.6 Ω 13.88 17 nC 6.78 8.1 nC 1.8 nC Qgd Gate Drain Charge 3.12 tD(on) Turn-On DelayTime 4.6 6.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime nC ns VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω 3.8 5.7 ns 20.9 30 ns tf Turn-Off Fall Time 5 7.5 ns trr Body Diode Reverse Recovery Time IF=5.8A, dI/dt=100A/µs 16.1 Qrr Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs 7.4 21 10 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 5 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 US3404 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 30 10V 25 20 6V 5V 4.5V ID(A) ID (A) 20 15 3.5V 12 8 10 125°C 4 VGS=3V 5 VDS=5V 16 4V 25°C 0 0 0 1 2 3 4 0 5 0.5 60 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 1.6 50 VGS=4.5V 40 30 20 VGS=10V 10 0 5 10 15 VGS=10V ID=5A 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 60 1.0E+00 ID=5A 50 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 10 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 1.0 US3404 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 1000 10 VDS=15V ID=5.8A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 Crss 0 0 2 4 6 8 10 12 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 15 30 100µs 10µs 10ms 0.1s 1 25 TJ(Max)=150°C TA=25°C 30 1ms 10 20 40 Power W ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 100 1000