XINDEYI US3404

US3404
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The US3404 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US3404 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
RDS(ON)
ID
30V
43m
5.8A
Applications
z
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Features
Advanced high cell density Trench technology
SOT23 Pin Configuration
Super Low Gate Charge
Excellent Cdv/dt effect decline
D
Green Device Available
G
D
S
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
Units
V
VGS
±20
V
ID
IDM
4.9
TA=25°C
5.8
TA=70°C
B
TA=25°C
Power Dissipation
Maximum
30
20
1.4
PD
TA=70°C
Junction and Storage Temperature Range
A
W
1
TJ, TSTG
-55 to 150
°C
Thermal Data
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
Symbol
A
A
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
1
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
US3404
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25
Symbol
, unless otherwise noted)
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Conditions
Min
ID=250µA, VGS=0V
5
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
20
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.8A
TJ=125°C
VGS=4.5V, ID=5.0A
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=5.8A
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
10
1.9
100
nA
3
V
22.5
28
31.3
38
34.5
43
VGS=10V, VDS=15V, ID=5.8A
mΩ
S
1
V
2.5
A
820
pF
102
pF
77
VGS=0V, VDS=0V, f=1MHz
mΩ
14.5
680
VGS=0V, VDS=15V, f=1MHz
µA
A
0.76
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Units
V
1
TJ=55°C
gFS
Max
30
VDS=24V, VGS=0V
VGS(th)
IS
Typ
pF
3
3.6
Ω
13.88
17
nC
6.78
8.1
nC
1.8
nC
Qgd
Gate Drain Charge
3.12
tD(on)
Turn-On DelayTime
4.6
6.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
nC
ns
VGS=10V, VDS=15V, RL=2.7Ω,
RGEN=3Ω
3.8
5.7
ns
20.9
30
ns
tf
Turn-Off Fall Time
5
7.5
ns
trr
Body Diode Reverse Recovery Time
IF=5.8A, dI/dt=100A/µs
16.1
Qrr
Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs
7.4
21
10
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 5 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2
US3404
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
30
10V
25
20
6V
5V
4.5V
ID(A)
ID (A)
20
15
3.5V
12
8
10
125°C
4
VGS=3V
5
VDS=5V
16
4V
25°C
0
0
0
1
2
3
4
0
5
0.5
60
Normalized On-Resistance
RDS(ON) (mΩ)
1.5
2
2.5
3
3.5
4
4.5
1.6
50
VGS=4.5V
40
30
20
VGS=10V
10
0
5
10
15
VGS=10V
ID=5A
1.5
1.4
VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
20
0
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
70
60
1.0E+00
ID=5A
50
IS Amps
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
30
25°C
1.0E-04
25°C
20
1.0E-05
10
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
1.0
US3404
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
1000
10
VDS=15V
ID=5.8A
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
Crss
0
0
2
4
6
8
10
12
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
15
30
100µs 10µs
10ms
0.1s
1
25
TJ(Max)=150°C
TA=25°C
30
1ms
10
20
40
Power W
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
5
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
100
1000