AO4817 25V Dual P-Channel MOSFET General Description The AO4817 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Features VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 21mΩ (VGS = -10V) ESD Rating: 1.5KV HBM SOIC-8 D1 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D2 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current B VGS ±25 V ID -6.9 IDM -40 Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead C W 1.44 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Junction and Storage Temperature Range 1/4 Units V -8 TA=70°C TA=25°C Power Dissipation A Maximum -30 TA=25°C Continuous Drain A Current S2 RθJA RθJL Typ 50 73 31 °C Max 62.5 110 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4817 25V Dual P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Max -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 Units V VDS=-24V, VGS=0V IDSS TJ=55°C -5 µA ±1 µA -2.8 -3 V 14.1 18 20 25 VGS=-10V, ID=-8A 17.1 21 VGS=-20V, ID=-8A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C A mΩ mΩ VGS=-4.5V, ID=-4A 44 mΩ Forward Transconductance VDS=-5V, ID=-8A 15 S VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current gFS DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1760 VGS=0V, VDS=-15V, f=1MHz Qgs Gate Source Charge Gate Drain Charge V A 2200 pF 360 pF 255 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgd -1 -2.6 VGS=-10V, VDS=-15V, ID=-8A 8 Ω 30 38 nC 7 nC 8 nC 12.5 ns 10.5 ns 40 ns 23 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/µs 24 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 16 VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω pF 6.4 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 3 : Nov. 2010 2/4 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA www.freescale.net.cn AO4817 25V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -10V VDS=-5V -5V -6V 20 20 -ID(A) -ID (A) 15 -4.5V 125°C 10 10 25°C 5 VGS=-4V 0 0 0 1 2 3 4 5 2 2.5 -VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 20 1.6 Normalized On-Resistance VGS=-10V RDS(ON) (mΩ ) 19 18 17 16 VGS=-20V 15 14 VGS=-20V ID=-8A 1.4 VGS=-10V ID=-8A 1.2 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=-8A 1.0E+00 50 RDS(ON) (mΩ ) 1.0E-01 125°C -IS (A) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1.0E-02 MARKET. APPLICATIONS OR USES AS CRITICAL 40 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1.0E-03 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 30 125°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04 25°C 20 1.0E-05 25°C 1.0E-06 10 0 5 10 15 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4817 25V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=-15V ID=-8A 2000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1500 1000 Coss 0 0 0 5 10 15 20 25 30 35 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 RDS(ON) limited 100µs TJ(Max)=150°C TA=25°C 10µs 30 1ms 10.0 Power (W) -ID (Amps) Crss 500 10ms 0.1s 1.0 1s 10 10s TJ(Max)=150°C TA=25°C DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, PD FUNCTIONS 0.1AND RELIABILITY WITHOUT NOTICE. Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/4 www.freescale.net.cn