US3401 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The US3401 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US3401 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) -30V ID 120mΩ -4.2A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge D z Excellent Cdv/dt effect decline G z Green Device Available D S G S Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B VGS A Units V ±12 V -4.2 -30 1.4 PD TA=70°C Junction and Storage Temperature Range A -3.5 ID IDM TA=25°C Power Dissipation Maximum -30 W 1 TJ, TSTG °C -55 to 150 Thermal Data Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W US3401 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.2A ID(ON) RDS(ON) gFS VSD IS Static Drain-Source On-Resistance -0.7 -1 -1 -5 µA ±100 nA -1.3 V A 42 50 75 mΩ 53 65 mΩ 80 11 -0.75 120 mΩ -1 -2.2 S V A TJ=125°C VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz Crss Rg VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4A VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω IF=-4A, dI/dt=100A/µs IF=-4A, dI/dt=100A/µs Units -25 VDS=-5V, ID=-5A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max V TJ=55°C Forward Transconductance Reverse Transfer Capacitance Gate resistance Typ 7 954 115 77 6 pF pF pF Ω 9.4 2 3 6.3 3.2 38.2 12 20.2 11.2 nC nC nC ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. UNITPOWER DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. UNITPOWER RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 US3401 P-Ch 30V Fast Switching MOSFETs Typical Characteristics 10 25.00 -10V VDS=-5V -4.5V 20.00 8 -2.5V 10.00 VGS=-2V 5.00 0.00 0.00 -ID(A) -ID (A) -3V 15.00 6 125°C 4 25°C 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 1 1.5 120 Normalized On-Resistance RDS(ON) (mΩ) 3 1.8 100 80 VGS=-2.5V VGS=-4.5V 60 40 VGS=-10V ID=-3.5A, VGS=-4.5V 1.6 ID=-3.5A, VGS=-10V 1.4 VGS=-2.5V 1.2 ID=-1A 1 0.8 2.00 4.00 6.00 8.00 10.00 0 25 50 -ID (A) 75 100 125 150 175 Temperature (°C) Fig.3 On-Resistance vs. Drain Current and Gate Voltage Fig.4 On-Resistance vs.Junction Temperature 190 1.0E+01 170 1.0E+00 150 ID=-2A 130 1.0E-01 -IS (A) RDS(ON) (mΩ) 2.5 Fig.2 Transfer Characteristics Fig.1 Typical Output Characteristics 20 0.00 2 -VGS(Volts) -VDS (Volts) 110 90 125°C 70 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) -VGS (Volts) Fig.5 On-Resistance vs.Gate-Source Voltage Fig.6 Body-Diode Characteristics 3 1.2 US3401 P-Ch 30V Fast Switching MOSFETs 5 1200 1000 Capacitance (pF) 4 3 2 Ciss 800 600 400 1 Coss 200 0 0 2 4 6 8 10 Crss 0 12 0 5 10 15 -Qg (nC) TJ(Max)=150°C TA=25°C 40 RDS(ON) 10.0 limited 30 100µs 1ms 1.0 10ms 20 10 1s 10s DC 0.1 0.1 1 10 0 0.001 100 0.01 0.1 ZθJA Normalized Transient Thermal Resistance 10 100 1000 Fig 1O: Single Pulse Power Rating Junction -to- Ambient(Note E) Fig 9 : Maximum Forward Biased Safe Operating Area(Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 1 Pulse Width (s) -VDS (Volts) 10 30 TJ(Max)=150°C TA=25°C 10µs 0.1s 25 Fig 8: Capacitance Characteristics Power (W) 100.0 20 -VDS (Volts) Fig 7: Gate-Charge Characteristics -ID (Amps) -VGS (Volts) 1400 VDS=-15V ID=-4A In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Fig.11 Normalized Maximum Transient Thermal Impedance 4 100 1000