IRF IRAMS10UP60APBF

PD-94640 RevG
IRAMS10UP60APbF
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1
RevG,.100507
IRAMS10UP60APbF
Internal Electrical Schematic - IRAMS10UP60APbF
V+ (10)
VRU (12)
VRV (13)
VRW (14)
Rg1
Rg3
Rg5
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
23 VS1
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
Rg2
LO1 16
Rg4
24 HO1
R3
LO2 15
25 VB1
1 VCC
HIN1 (15)
HIN2 (16)
HIN3 (17)
2 HIN1
LIN1 (18)
5 LIN1
Rg6
Driver IC
LO3 14
3 HIN2
4 HIN3
LIN2 LIN3 F ITRIP EN RCIN VSS COM
6
7
8
9
10
11
12 13
LIN2 (19)
R1
LIN3 (20)
T/ITRIP (21)
RT
VDD (22)
R2
THERMISTOR
C
VSS (23)
2
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IRAMS10UP60APbF
Inverter Section Electrical Characteristics @ TJ = 25°C
Symbol
Parameter
Min
Typ
Max
Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V
∆V(BR)CES / ∆T
Temperature Coeff. Of
Breakdown Voltage
---
0.57
---
V/°C
VCE(ON)
Collector-to-Emitter Saturation
Voltage
---
1.7
2.0
---
2.0
2.4
ICES
Zero Gate Voltage Collector
Current-to-Emitter
---
5
15
---
10
40
Ilk_module
Zero Gate Phase-to-Phase
Current
--
--
50
VFM
Diode Forward Voltage Drop
---
1.8
2.35
---
1.3
1.7
V
µA
µA
V
VIN=0V, IC=20µA
VIN=0V, IC=1.0mA
(25°C - 150°C)
IC=5A
TJ=25°C, VDD=15V
IC=5A
TJ=150°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150°C
VIN=5V, V+=600V
IC=5A
IC=5A, TJ=150°C
Inverter Section Switching Characteristics
Symbol
Parameter
Min
Typ
Max
Eon
Turn-On Switching Loss
---
200
235
Eoff
Turn-Off Switching Loss
---
75
100
Etot
Total Switching Loss
---
275
335
Eon
Turn-on Swtiching Loss
---
300
360
Eoff
Turn-off Switching Loss
---
135
165
Etot
Total Switching Loss
---
435
525
Erec
Diode Reverse Recovery
energy
---
30
trr
Diode Reverse Recovery time
---
100
RBSOA
Reverse Bias Safe Operating
Area
SCSOA
Short Circuit Safe Operating
Area
Units Conditions
µJ
See CT1
---
TJ=25°C
TJ=150°C
µJ
Energy losses include "tail" and
diode reverse recovery
40
µJ
145
ns
TJ=150°C, V+ =400V VDD=15V,
IF=5A, L=1mH
TJ=150°C, IC=5A, VP=600V
V+=480V, VDD=+15V to 0V
See CT3
FULL SQUARE
10
IC=5A, V+=400V
VDD=15V, L=1mH
---
µs
TJ=150°C, VP=600V,
V+=360V,
VDD=+15V to 0V
See CT2
Thermal Resistance
Symbol
Parameter
Min
Typ
Max
Rth(J-C)
Junction to case thermal
resistance, each IGBT under
inverter operation.
---
4.2
4.7
°C/W
Rth(J-C)
Junction to case thermal
resistance, each Diode under
inverter operation.
---
5.5
6.5
Flat, greased surface.
Heatsink compound thermal
°C/W conductivity - 1W/mK
Rth(C-S)
Thermal Resistance case to
sink
---
0.1
---
°C/W
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Units Conditions
3
IRAMS10UP60APbF
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate substaines limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS (Note 1)
Symbol
VS1,2,3
Definition
High Side offset voltage
Min
-0.3
Max
600
Units
V
VB1,2,3
High Side floating supply voltage
-0.3
20
V
VDD
Low Side and logic fixed supply voltage
-0.3
20
V
VIN
Input voltage LIN, HIN, T/ITRIP
-0.3
7
V
TJ
Juction Temperature
-40
150
°C
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies biased
at 15V differential (Note 1). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor to
VDD
Sym bol
Definition
Min
Max
VB1,2,3
VS1,2,3
Units
High side floating supply voltage
VS+12
VS+20
High side floating supply offset voltage
Note 2
450
VDD
Low side and logic fixed supply voltage
12
20
VITRIP
T/ITRIP input voltage
VSS
VSS+5
VIN
Logic input voltage LIN, HIN
VSS
VSS+5
V
V
V
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. (Note 1)
Symbol
VIN,th+
Definition
Positive going input threshold
Min
3.0
Typ
---
Max
---
Units
V
VIN,th-
Negative going input threshold
---
---
0.8
V
VCCUV+
VBSUV+
VCC and VBS supply undervoltage
Positive going threshold
10.6
11.1
11.6
V
VCCUVVBSUV-
VCC and VBS supply undervoltage
Negative going threshold
10.4
10.9
11.4
V
VCCUVH
VBSUVH
VCC and VBS supply undervoltage
Ilockout hysteresis
---
0.2
---
V
IQBS
Quiescent VBS supply current
---
70
120
µA
IQCC
Quiscent VCC supply current
---
1.6
2.3
mA
ILK
Offset Supply Leakage Current
---
---
50
IIN+
Input bias current (OUT=LO)
---
100
220
IIN+
Input bias current (OUT=HI)
---
200
300
µA
µA
µA
V(ITRIP)
ITRIP threshold Voltage (OUT=HI or OUT=LO)
3.85
4.3
4.75
V
4
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IRAMS10UP60APbF
Dynamic Electrical Characteristics
VDD=VBS=VBIAS=15V, Io=1A, VD=9V, PWMIN=2kHz, VIN_ON=VIN_th+, VIN_OFF=VIN_thTA=25°C, unless otherwise specified
Symbol
Definition
Min
Typ
Max
Units
TON
Input to output propagation turn-on delay time (see fig.11)
-
470
-
ns
TOFF
Input to output propagation turn-off delay time (see fig. 11)
-
615
-
ns
DT
Dead Time
-
300
-
ns
I/TTrip
T/ITrip to six switch to turn-off propagation delay (see fig. 2)
-
750
-
ns
TFCLTRL
Post ITrip to six switch to turn-off clear time (see fig. 2)
-
9
-
ms
Internal NTC - Thermistor Characteristics
Parameter
Typ
Units
Resistance
100 +/- 5%
kΩ
TC = 25°C
R125
Resistance
2.522 + 17.3 % /- 14.9%
kΩ
TC = 125°C
B
B-Constant (25-50°C)
4250 +/- 3%
k
-40 / 125
°C
1
mW/°C
R25
Temperature Range
Typ. Dissipation constant
Conditions
R2 = R1e [B(1/T2 - 1/T1)]
TC = 25°C
Note 1: For more details, see IR21365 data sheet
Note 2: Logic operational for Vs from V--5V to V-+600V. Logic stata held for VS from V--5V to V--VBS. (Please refer to
DT97-3 for more details)
Thermistor Built-in IRAMS10UP60APbF
VCC (22)
NTC
T/ITRIP (21)
4.3k
12K
IR21365
VSS (23)
Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating conditions is 3.3V.
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IRAMS10UP60APbF
Figure1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
Itrip
U,V,W
Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
V+
Ho
Hin1,2,3
(15,16,17)
(18,19,20)
6
HIN1,2,3
LIN1,2,3
U,V,W
0
0
0
1
0
1
1
X
1
0
1
X
Vbus
0
X
X
U,V,W
IC
Driver
Lin1,2,3
Itrip
(8,5,2)
Lo
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IRAMS10UP60APbF
Figure 2. T/ITrip Timing Waveform
HIN1,2,3
LIN1,2,3
50%
T/Itrip
U,V,W
50%
tfltclr
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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IRAMS10UP60APbF
Module Pin-Out Description
8
Pin
Name
1
VB3
2
W,VS3
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
3
na
none
4
VB2
High Side Floating Supply voltage 2
5
V,VS2
Output 2 - High Side Floating Supply Offset Voltage
6
na
none
7
VB1
High Side Floating Supply voltage 1
8
U,VS1
9
na
none
10
V+
Positive Bus Input Voltage
11
na
none
12
LE1
Low Side Emitter Connection - Phase 1
13
LE2
Low Side Emitter Connection - Phase 2
Output 1 - High Side Floating Supply Offset Voltage
14
LE3
15
HIN1
Logic Input High Side Gate Driver - Phase 1
Low Side Emitter Connection - Phase 3
16
HIN2
Logic Input High Side Gate Driver - Phase 2
17
HIN3
Logic Input High Side Gate Driver - Phase 3
18
LIN1
Logic Input Low Side Gate Driver - Phase 1
19
LIN2
Logic Input Low Side Gate Driver - Phase 2
20
LIN3
Logic Input Low Side Gate Driver - Phase 3
21
T/Itrip
22
VCC
+15V Main Supply
23
VSS
Negative Main Supply
Temperature Monitor and Shut-down Pin
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IRAMS10UP60APbF
Typical Application Connection IRAMS10UP60APbF
VB W
VSW
U
BOOT-STRAP
CAPACITORS
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
V BV
V
3-ph AC
MOTOR
VSV
VB U
W
VSU
V+
DC BUS
CAPACITORS
LeU
PHASE LEG
CURRENT
SENSE
LeV
LeW
HINU
HINV
Driver IC
HINW
CONTROLLER
LINU
LINV
LINW
TEMP
SENSE
T/ITRIP
5k
3.3 V
1m
VDD(15 V)
6.8K
10.2k
10m
0.1
m
VSS
NTC
12k
O/C
SENSE
(ACTIVE LOW)
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance.
2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically
0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9.
4. Low inductance shunt resistors shuld be used for phase leg current sensing. Similarly, the length of the traces between pins 12, 13 and 14 to the corrisponding shunt resistors should be kept as small as possible.
5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in inverter.
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Maximum RMS Output Current/Phase (A).
IRAMS10UP60APbF
10
9
Tc=100°C
8
Tc=110°C
7
Tc=120°C
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
PWM Switching Frequency (kHz)
Figure 3. Maximum sinusoidal phase current as function of switching frequency
VBUS=400V, Tj=150°C, Modulation Depth=0.8, PF=0.6
7
Maximum RMS Phase Current (A).
Switching Frequency:
6
12 kHz
16 kHz
20 kHz
5
4
3
2
1
0
1
10
100
Motor Current Modulation Frequency (Hz)
Figure 4. Maximum sinusoidal phase current as function of modulation frequency
VBUS=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6
10
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IRAMS10UP60APbF
9
450
Current
Voltage
Current (A)
7
400
350
6
300
5
250
4
200
3
150
2
100
1
50
0
0
-1
0.0
Voltage (V)
8
-50
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Time (µs)
Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, VBUS=400V
9
450
8
400
7
350
Current
Voltage
5
300
250
4
200
3
150
2
100
1
50
0
0
-1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Voltage (V)
Current (A)
6
-50
1.0
Time (µs)
Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, VBUS=400V
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IRAMS10UP60APbF
Thermistor Resistance (k_Ω )
1000
Minimum
Nominal
100
Maximum
10
1
0
20
40
60
80
100
120
140
120
140
Temperature (°C)
Figure 7. Variation of thermistor resistance with temperature
4
V sense (V) .
3
Maximum
Nominal
Minimum
2
1
0
0
20
40
60
80
Thermistor Temperature (°C)
100
Figure 8. Variation of temperature sense voltage with thermistor temperature using external bias resistance of 4.3KΩ, VCC=15V
12
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IRAMS10UP60APbF
IGBT Junction Temperature (°C).
180
160
140
120
100
80
60
80
90
100
110
120
Thermistor Temperature (°C)
130
140
150
Figure 9. Estimated maximum IGBT junction temperature with thermistor
temperature
20
17.5
Capacitance (µF)
15
15
12.5
10
6.8
7.5
4.7
5
3.3
2.2
2.5
0
0
1.5
3
4.55
6
7.5
9 10 10.5
12
13.5 1515
16.5
18
19.5
20
Switching Frequency (kHz)
Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching
Frequency
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IRAMS10UP60APbF
Figure 11. Switching Parameter Definitions
VCE
IC
IC
VCE
90% IC
50%
HIN/LIN
90% IC
HIN/LIN
HIN/LIN
50%
HIN/LIN
10%
VCE
10% IC
10% IC
TON
TOFF
tr
Figure 11a. Input to Output propagation turn-on delay time
tf
Figure 11b. Input to Output
propagation turn-off delay timet
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery
14
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IRAMS10UP60APbF
Vbus
5V
Ho
Hin1,2,3
IC
Driver
U,V,W
Lo
Lin1,2,3
Figure CT1. Switching Loss Circuit
Vbus
1k
10k
VCC
Lin1,2,3
IN
Ho
Hin1,2,3
IC
Driver
5VZD
U,V,W
Io
VP=Peak Voltage on the IGBT die
Lo
IN
PWM=4µs
Io
Figure CT2. S.C.SOA Circuit
Vbus
Ho
Hin1,2,3
1k
IN
10k
VCC
IC
Driver
5VZD
Lin1,2,3
IN
U,V,W
Lo
Io
VP=Peak Voltage on the IGBT die
Io
Figure CT3. R.B.SOA Circuit
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IRAMS10UP60APbF
Package Outline
note 2
note 3
027-E2D24
note 1
Standard pin leadforming option
Notes:
Dimensions in mm
1 - Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
For mounting instruction see AN-1049
16
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IRAMS10UP60APbF
Package Outline
note 2
note 3
027-E2D24
note 1
Pin leadforming option -2
Notes:
Dimensions in mm
1 - Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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Rev G, 10/07
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