Unitpower UT75N80 N-Channel Enhancement Mode MOSFET Features • Pin Description SD 80V/70A, G RDS(ON)=11mΩ (max.) @ VGS=10V • • Reliable and Rugged Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D Applications • • G Synchronous Rectification. Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code UT75N80 T:TO-220 Assembly Material Operating Junction Temperature Range C : -55 to 175 oC Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device Handling Code Temperature Range Package Code UT75N80 UT75N80 XXXXX XXXXX - Date Code Note: Unitpower lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. Unitpower lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. Unitpower defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Unitpower reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright Unitpower Technology Ltd Rev. P.1 - Feb., 2010 1 Unitpower UT75N80 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA =25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current I DP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation 70 TC=25°C 280 TC=25°C 70 TC=100°C 50 TC=25°C 100 TC=100°C 50 Thermal Resistance-Junction to Case 1.5 RθJA Thermal Resistance-Junction to Ambient 62.5 EAS Avalanche Energy, Single Pulsed Symbol °C -55 to 175 RθJC Electrical Characteristics V L=2mH A W °C/W 0.8 J (TA = 25°C Unless Otherwise Noted) Parameter Test Condition UT75N80 Min. Typ. Max. 80 - - - - 1 - - 30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) I GSS RDS(ON) a VGS=0V, IDS=250µA VDS=64V, V GS=0V TJ =85°C V µA Gate Threshold Voltage VDS=VGS, I DS=250µA 2 3 4 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=40A - 8 11 mΩ ISD =20A, V GS=0V - 0.8 1.3 V - 50 - ns - 90 - nC Diode Characteristics VSD a trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Copyright Unitpower Technology Ltd Rev. P.1 - Feb., 2010 ISD =40A, dlSD /dt=100A/µs 2 Unitpower UT75N80 Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Condition UT75N80 Min. Typ. Max. - 1.3 - - 3000 4200 - 350 - - 200 - - 22 40 - 14 25 - 58 104 - 25 45 - 77 108 - 22 - - 23 - Unit Dynamic Characteristics b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, RL=30Ω, IDS=1A, V GEN=10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics pF ns b Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge VDS=40V, V GS=10V, IDS=40A Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. Copyright Unitpower Technology Ltd Rev. P.1 - Feb., 2010 Ω 3 nC Unitpower UT75N80 Package Information TO-220 E A E2 A1 E1 H1 Q E/2 L L1 D1 D D2 P b e c A2 b2 S Y M B O L A MIN. 3.56 MAX. 4.83 A1 0.51 1.40 0.020 0.055 A2 2.03 2.92 0.080 0.115 TO-220 INCHES MILLIMETERS MIN. 0.140 MAX. 0.190 b 0.38 1.02 0.015 0.040 b2 1.14 1.78 0.045 0.070 c D 0.36 0.61 0.014 0.024 14.22 8.38 16.51 0.560 0.650 D1 0.330 0.355 D2 12.19 9.02 12.88 0.480 0.507 E 9.65 10.67 0.380 0.420 E1 6.86 8.89 0.270 0.350 0.030 0.76 E2 e 2.54 BSC 0.100 BSC H1 5.84 6.86 0.230 0.270 L 12.70 14.73 0.500 0.580 0.250 6.35 L1 P 3.53 4.09 0.139 0.161 Q 2.54 3.43 0.100 0.135 Note: Follow JEDEC TO-220 AB. Copyright Unitpower Technology Ltd Rev. P.1 - Feb., 2010 4 Unitpower UT75N80 Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Copyright Unitpower Technology Ltd Rev. P.1 - Feb., 2010 5 Unitpower UT75N80 Classification Reflow Profiles (Cont.) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm <350 Thickness <2.5 mm 235 °C ≥2.5 mm Volume mm ≥350 220 °C 220 °C 3 220 °C Table 2. Pb-free Process – Classification Temperatures (Tc) Package Thickness <1.6 mm 1.6 mm – 2.5 mm ≥2.5 mm Volume mm3 <350 260 °C 260 °C 250 °C Volume mm3 350-2000 260 °C 250 °C 245 °C Volume mm 3 >2000 260 °C 245 °C 245 °C Reliability Test Program Test item SOLDERABILITY HOLT PCT TCT Copyright Unitpower Technology Ltd Rev. P.1 - Feb., 2010 Method JESD-22, B102 JESD-22, A108 JESD-22, A102 JESD-22, A104 6 Description 5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C