COMSET TIP106

SEMICONDUCTORS
PNP TIP105-106-107
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are designed for general purpose amplifier and low-speed switching
applications.
NPN complements are TIP100-101-102
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
@ Tc < 25°
PT
Power Dissipation
@ Ta < 25°
TJ
Ts
Junction Temperature
Storage Temperature range
04/10/2012
Value
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
COMSET SEMICONDUCTORS
-60
-80
-100
-60
-80
-100
Unit
V
V
-5
V
-8
A
-15
A
-1
A
80
Watts
2
150
°C
-65 to +150
1|3
SEMICONDUCTORS
PNP TIP105-106-107
THERMAL CHARACTERISTICS
Symbol
RthJ-case
RthJ-amb
Ratings
Value
Unit
1.56
62.5
°C/W
°C/W
From junction-case
From junction-ambient
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
Collector Cutoff Current
IE= 0,VCB = -VCBOmax
ICEO
Collector Cutoff Current
IE= 0,
VCE = -1/2 VCEOmax
IEBO
Emitter Cutoff Current
VEB= -5 V, IC= 0
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= -30 mA, IB= 0
IC= -3 A, IB= -6 mA
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= -8 A, IB= -80 mA
VBE(on)
Base-Emitter Voltage
(*)
IC= -8 A, VCE= -4 V
VCE= -4 V, IC= -3 A
hFE
DC Current Gain (*)
VCE= -4 V, IC= -8 A
COB
Output Capacitance
IE= 0, VCB = -10 V,
f = 1MHz
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
Min
Typ
Max
Unit
-
-
-50
µA
-
-
-50
µA
-
-
-8
mA
-60
-80
-100
-
-
V
-
-
-2
V
-
-
-2.5
-
-
-2.8
1000
-
20k
-
200
-
-
-
-
300
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
04/10/2012
COMSET SEMICONDUCTORS
V
2|3
pF
SEMICONDUCTORS
PNP TIP105-106-107
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Max.
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Case :
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
04/10/2012
[email protected]
COMSET SEMICONDUCTORS
3|3