SEMICONDUCTORS PNP TIP105-106-107 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP100-101-102 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Peak Current IB Base Current @ Tc < 25° PT Power Dissipation @ Ta < 25° TJ Ts Junction Temperature Storage Temperature range 04/10/2012 Value TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 COMSET SEMICONDUCTORS -60 -80 -100 -60 -80 -100 Unit V V -5 V -8 A -15 A -1 A 80 Watts 2 150 °C -65 to +150 1|3 SEMICONDUCTORS PNP TIP105-106-107 THERMAL CHARACTERISTICS Symbol RthJ-case RthJ-amb Ratings Value Unit 1.56 62.5 °C/W °C/W From junction-case From junction-ambient ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current IE= 0,VCB = -VCBOmax ICEO Collector Cutoff Current IE= 0, VCE = -1/2 VCEOmax IEBO Emitter Cutoff Current VEB= -5 V, IC= 0 VCEO Collector-Emitter Breakdown Voltage (*) IC= -30 mA, IB= 0 IC= -3 A, IB= -6 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -8 A, IB= -80 mA VBE(on) Base-Emitter Voltage (*) IC= -8 A, VCE= -4 V VCE= -4 V, IC= -3 A hFE DC Current Gain (*) VCE= -4 V, IC= -8 A COB Output Capacitance IE= 0, VCB = -10 V, f = 1MHz TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 Min Typ Max Unit - - -50 µA - - -50 µA - - -8 mA -60 -80 -100 - - V - - -2 V - - -2.5 - - -2.8 1000 - 20k - 200 - - - - 300 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 04/10/2012 COMSET SEMICONDUCTORS V 2|3 pF SEMICONDUCTORS PNP TIP105-106-107 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U Max. 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Case : 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 04/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3