BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Peak Current IB Base Current 26/09/2012 Value BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C COMSET SEMICONDUCTORS -80 -100 -120 -140 -80 -100 -120 -140 -5.0 Unit V V V -16 A -20 -0.5 A 1/4 BDV66-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings PT Power Dissipation TJ Junction Temperature Tmb = 25° C Storage Temperature TS BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C Value Unit 175 Watts 150 °C -65 to +150 THERMAL CHARACTERISTICS Symbol Rthj-c Ratings Value Unit 0.625 °C / W Thermal Resistance, Junction to Case SWITCHING TIMES Symbol ton toff Ratings turn-on time turn-off time Value Test Condition(s) IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA Unit Min Typ Max - 1 3.5 - µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 % 26/09/2012 COMSET SEMICONDUCTORS 2/4 BDV66-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICEO Collector Cutoff Current VCE= -40 V, IB= 0 VCE= -50 V, IB= 0 VCE= -60 V, IB= 0 VCE= -70 V, IB= 0 IEBO Emitter Cutoff Current VBE= -5 V, IC= 0 ICBO Collector Cutoff Current IE= 0 Tj=25°C IE= 0 Tj=150°C VCB= -80 V VCB= -100 V VCB= -120 V VCB= -140 V VCB= -40 V VCB= -50 V VCB= -60 V VCB= -70 V VCEO Collector-Emitter Breakdown Voltage (*) IC= -100 mA, IB = 0 hFE DC Current Gain (*) VCE= -3 V, IC= -10 A VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -10 A, IB= -40 mA VBE Base-Emitter Voltage(*) VCE= -3 V, IC= -10 A COB Output Capacitance VCB= -10 V, IE= 0 ftest= 1 MHz 26/09/2012 BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C COMSET SEMICONDUCTORS Min Typ Max Unit - - -1 mA - - -5 mA - - -1 mA - - -5 -60 -80 -100 -120 - - 1000 - - - - - -2 V - - -2,5 V - 300 - pF V 3/4 BDV66-A-B-C MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Package Max. 15.20 1.90 4.60 3.10 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 0.35 5.35 20.00 19.60 0.95 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 4.80 Base Collector Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 26/09/2012 [email protected] COMSET SEMICONDUCTORS 4/4