2N5679 – 2N5680 PNP SWITCHING TRANSISTORS C The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case. They are intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. The complementary NPN types are the 2N5681 and 2N5682 . Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings VCEO VCBO VEBO IC IB Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current IB =0 IE =0 IC =0 PD Total Power Dissipation TJ TStg Junction Temperature Storage Temperature range Tamb = 25°C Tcase = 25°C 25679 2N5680 -100 -100 -120 -120 Unit V V V A mA -4 -1 -500 1 10 200 -65 to +150 W °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient 175 °C/W RthJ-c Thermal Resistance, Junction to case 17.5 °C/W COMSET SEMICONDUCTORS 1/3 2N5679 – 2N5680 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICBO ICEO ICEV IEBO VCEO(sus) VCE(SAT) VBE hFE Ratings Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Min Test Condition(s) VCB = -100 V, IE = 0 VCB = -120 V, IE = 0 VCE = -70 V, IB = 0 VCE = -80 V, IB = 0 VCE = -100 V, VBE = 1.5 V VCE = -120 V, VBE = 1.5 V VCE = -100 V, VBE = 1.5 V TC = 150°C VCE = -120 V, VBE = 1.5 V TC = 150°C 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 fT Transition frequency COB Output Capacitance hfe Small Signal Current Gain Mx Unit - - -1 µA - - -10 µA - - -1 µA - - -1 mA - - -1 µA -100 -120 - - V - - -0.6 - - -1 - - -2 - - -1 40 - 150 5 - - 30 - - MHz - - 50 pF 40 - - - 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 2N5679 IC = -250 mA, VCE = -2 V 2N5680 2N5679 IC = -1 A, VCE = -2 V 2N5680 IC = -100 mA, VCE = -10 V 2N5679 f = 10 MHz 2N5680 2N5679 IE = 0, VCB = -20 V f = 1MHz 2N5680 IC = -200 mA, VCE = -1.5 V 2N5679 f = 1 kHz 2N5680 Emitter Cutoff VBE = -4.0 V, IC = 0 Current Collector Emitter I = -10 mA, IB = 0 Sustaining voltage (*) C IC = -250 mA IB = -25 mA IC = -500 mA Collector-Emitter saturation Voltage (*) IB = -50 mA IC = -1 A IB = -200 mA Base-Emitter Voltage IC = -250 mA, VCE = -2 V (*) DC Current Gain (*) Typ V V (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 24/09/2012 COMSET SEMICONDUCTORS 2/3 2N5679 – 2N5680 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 24/09/2012 [email protected] COMSET SEMICONDUCTORS 3/3