AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features VDS (V) = 30V ID = 65A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 1/6 A 11 IAR 42 A EAR 88 mJ 42 2 W 1.2 -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 17 PDSM TA=70°C A 14 PD TC=100°C V 130 IDSM TA=70°C ±20 43 IDM TA=25°C Continuous Drain Current Avalanche Current C Units V 65 ID TC=100°C Maximum 30 RθJA RθJC Typ 24 53 2.6 °C Max 30 64 3 Units °C/W °C/W °C/W www.freescale.net.cn AON6426 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36.7 VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 130 TJ=55°C 5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A 100 nA 2.5 V 4.5 5.5 6.8 8.2 6 7.5 mΩ 1 V 40 A 2300 pF A Forward Transconductance VDS=5V, ID=20A 53 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1930 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ S 290 pF 230 pF Ω 1.4 2.1 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 37 45 Qg(4.5V) Total Gate Charge 18 nC 4.8 nC 11 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, ID=20A 0.7 µA 1.8 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 IDSS ID(ON) Max nC 8.1 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 8.6 ns 29 ns 8 ns IF=20A, dI/dt=500A/µs 14 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17 40 ns nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 2 : Nov-10 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON6426 30V N-Channel MOSFET 130 120 110 100 90 80 70 60 50 40 30 20 10 0 80 10V VDS=5V 70 4.5 60 5V 4V 50 ID(A) ID (A) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 20 125°C VGS=3.5V 25°C 10 0 0 1 2 3 4 0 5 1 8 Normalized On-Resistance RDS(ON) (mΩ ) 4 5 2 7 VGS=4.5V 6 5 4 VGS=10V 3 1.8 VGS=10V ID=20A 1.6 17 5 VGS=4.5V 2 ID=20A 10 1.4 1.2 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 16 1.0E+02 ID=20A 14 1.0E+01 40 12 1.0E+00 10 IS (A) RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 8 1.0E-01 1.0E-02 6 125°C 1.0E-03 4 25°C 25°C 1.0E-04 2 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON6426 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=15V ID=20A 2400 Capacitance (pF) VGS (Volts) 8 2700 6 4 Ciss 2100 1800 1500 1200 Coss 900 600 2 300 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 0 40 RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 160 10µs Power (W) 10µs 100.0 ID (Amps) 5 30 200 1000.0 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 10 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance Crss 0 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 40 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON6426 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 120 80 TA=100°C 60 TA=150°C 40 TA=125°C 20 40 30 20 10 0 0 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 80 10000 60 1000 Power (W) Current rating ID(A) TA=25°C 40 10 20 1 1E05 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 10 Zθ JA Normalized Transient Thermal Resistance 17 5 2 10 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 1E- 0.001 0.01 04 0.1 1 10 100 1000 0 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=64°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AON6426 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn