AON7402 30V N-Channel MOSFET General Description The AON7402 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS 30V ID (at VGS=10V) 39A RDS(ON) (at VGS=10V) < 10mΩ RDS(ON) (at VGS = 4.5V) < 15mΩ D Top View S S S 1 8 D 2 7 3 6 D D G 4 5 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C V A 80 13.5 IDSM TA=70°C ±20 24 IDM TA=25°C Continuous Drain Current Units V 39 ID TC=100°C Maximum 30 A 10.8 C IAR 20 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 20 mJ Avalanche Current Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range 1/6 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 10.4 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 26 PD -55 to 150 Typ 30 60 4 °C Max 40 75 4.8 Units °C/W °C/W °C/W www.freescale.net.cn AON7402 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V V 80 TJ=55°C 5 TJ=125°C VGS=4.5V, ID=20A 1.7 2.2 8.6 10 13 16 12.1 15 mΩ 1 V 30 A Forward Transconductance VDS=5V, ID=20A 43 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz V A gFS Output Capacitance µA ±100 VGS=10V, ID=20A Coss Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ S 770 pF 240 pF 77 pF 0.8 1.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14.8 17.8 nC Qg(4.5V) Total Gate Charge 7.1 8.5 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.4 nC 2.2 nC 3.1 nC 5 ns 3 ns 18 ns 3 ns 11 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 23 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7402 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 80 10V 6V 4.5V VDS=5V 50 60 4V ID(A) ID (A) 40 40 3.5V 30 20 20 VGS=3V 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 16 Normalized On-Resistance 1.8 14 VGS=4.5V RDS(ON) (mΩ Ω) 25°C 125°C 10 12 10 8 VGS=10V 6 VGS=10V ID=20A 1.6 1.4 17 5 VGS=4.5V ID=20A 2 10 1.2 1 0.8 4 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+02 ID=20A 1.0E+01 25 40 1.0E+00 125°C 15 10 1.0E-01 1.0E-02 125°C 25°C 1.0E-03 25°C 5 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 IS (A) RDS(ON) (mΩ Ω) 20 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7402 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 8 1000 Capacitance (pF) VGS (Volts) Ciss 6 4 2 600 400 Coss 200 0 Crss 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge Characteristics 0 16 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 10µs 100.0 1.0 DC 100µs 1ms 10ms Power (W) 10.0 0.1 160 TJ(Max)=150°C TC=25°C 120 17 5 2 10 10µs RDS(ON) ID (Amps) 800 80 40 TJ(Max)=150°C TC=25°C 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=4.8°C/W 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7402 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 IAR (A) Peak Avalanche Current TA=25°C 25 Power Dissipation (W) TA=150°C TA=100°C TA=125°C 15 10 5 0 10 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 1000 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 10000 50 TA=25°C 40 1000 Power (W) Current rating ID(A) 20 30 20 17 5 2 10 100 10 10 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 150 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7402 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn