AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Features VDS ID (at VGS= 10V) 30V 36A RDS(ON) (at VGS= 10V) < 7.5mΩ RDS(ON) (at VGS = 4.5V) < 11mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C C 13.5 A 10.5 Avalanche Current C IAS, IAR 27 A Avalanche energy L=0.1mH C EAS, EAR 36 mJ TC=25°C Power Dissipation B A TC=100°C Junction and Storage Temperature Range 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 25 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 50 PD TA=25°C Power Dissipation 1/6 A 125 IDSM TA=70°C V 28 IDM TA=25°C Continuous Drain Current Units V 36 ID TC=100°C Pulsed Drain Current Maximum 30 ±20 -55 to 175 Typ 16 41 2.5 °C Max 20 50 3 Units °C/W °C/W °C/W www.freescale.net.cn AOD418/AOI418 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 125 ±100 VGS=10V, ID=20A 8.5 11 mΩ VGS=10V, ID=20A TO251A 6.7 8 mΩ VGS=4.5V, ID=20A TO251A 9 11.5 mΩ TJ=125°C VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V A 7.5 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous CurrentG Crss nA 11.5 Forward Transconductance Output Capacitance 2.5 9.5 VSD Coss 1.95 µA 6.2 TO252 VGS=4.5V, ID=20A TO252 gFS IS Units V 1 VGS(th) Static Drain-Source On-Resistance Max 30 IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 63 0.72 mΩ S 1 V 36 A 920 1150 1380 pF 125 180 235 pF 60 105 150 pF 0.55 1.1 1.65 Ω 16 20 24 nC 7.6 9.5 11 Qgs Gate Source Charge 2.7 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time 2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 7 8.7 10.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 11 13.5 16 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 17 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOD418/AOI418 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 10V 120 80 100 4.5V 60 80 ID(A) ID (A) VDS=5V 5V 7V 4V 60 40 40 125°C 3.5V 20 20 VGS=3V 0 0 1 2 3 4 25°C 0 1 5 12 2 2.5 3 3.5 4 4.5 5 5.5 Normalized On-Resistance 2 10 RDS(ON) (mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 8 6 VGS=10V 4 2 VGS=10V ID=20A 1.8 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 25 1.0E+02 ID=20A 1.0E+01 20 40 15 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 10 25°C 25°C 1.0E-02 1.0E-03 5 1.0E-04 0 1.0E-05 0 3/6 125°C 1.0E-01 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD418/AOI418 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=20A 1400 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1200 1000 800 600 400 2 Coss 200 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 RDS(ON) limited 10µs 100µs 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 TJ(Max)=175°C TC=25°C 160 Power (W) 10µs 100.0 10.0 5 200 1000.0 -ID (Amps) Crss 0 17 5 2 10 120 80 40 1 -VDS (Volts) 10 100 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3°C/W 40 PD 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 Ton 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD418/AOI418 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 TA=150°C Power Dissipation (W) -IAR (A) Peak Avalanche Current TA=25°C TA=100°C 50 40 30 20 10 TA=125°C 10 1 0 0 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 100 50 TA=25°C 80 Power (W) 40 Current rating ID(A) 25 30 20 60 17 5 2 10 40 20 10 0 0.00001 0 0 ZθJA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 Pulse Width (s) 18 175 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD418/AOI418 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - + VDC - Qgs Vds Qgd + VDC DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs VDC - DUT Vgs Rg td(off) tr tf 90% Vdd + Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id VDC - Vgs Vgs + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.freescale.net.cn