AON6428 30V N-Channel MOSFET General Description The AON6428 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Features VDS 30V ID (at VGS=10V) 43A RDS(ON) (at VGS=10V) < 10mΩ RDS(ON) (at VGS= 4.5V) < 14.5mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C A 11 A 8 Avalanche Current C IAR 45 A Repetitive avalanche energy L=0.05mH C TC=25°C EAR 51 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 30 PD 2 Steady-State Steady-State RθJA RθJC W 1.3 -55 to 150 TJ, TSTG Symbol t ≤ 10s W 12 PDSM TA=70°C Junction and Storage Temperature Range 1/6 V 80 IDSM TA=70°C ±20 27 IDM TA=25°C Units V 43 ID TC=100°C Maximum 30 Typ 21 50 3.5 °C Max 25 60 4.2 Units °C/W °C/W °C/W www.freescale.net.cn AON6428 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=55°C 5 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A ±100 nA 2.2 V 8.3 10 12.4 15 11.3 14.5 mΩ 1 V 35 A A Forward Transconductance VDS=5V, ID=20A 43 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz µA 1.7 gFS DYNAMIC PARAMETERS Input Capacitance Ciss Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ S 770 pF 240 pF 77 pF 0.8 1.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14.8 17.8 nC Qg(4.5V) Total Gate Charge 7.1 8.5 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 0.4 nC 2.2 nC 3.1 nC 5 ns 3 ns 18 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 23 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON6428 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 80 10V 7V 70 4.5V 60 4V 40 ID(A) 50 ID (A) VDS=5V 50 40 3.5V 30 30 20 20 125°C 0 0 0 1 2 3 4 5 0 Normalized On-Resistance 14 VGS=4.5V 12 RDS(ON) (mΩ Ω) 2 3 4 5 1.8 16 10 8 VGS=10V 6 4 1.6 VGS=10V ID=20A 1.4 17 5 2 10 =4.5V 1.2 VGS ID=20A 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 35 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=20A 30 1.0E+01 40 1.0E+00 20 125°C IS (A) 25 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.0E-02 10 1.0E-03 25°C 125°C 1.0E-01 15 5 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 25°C 10 VGS=3V 10 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON6428 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 8 1000 Capacitance (pF) VGS (Volts) Ciss 6 4 2 600 Coss 400 200 0 Crss 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge Characteristics 0 16 10µs 100.0 RDS(ON) 1ms 1.0 DC 10ms TJ(Max)=150°C TC=25°C Power (W) 100µs 0.1 160 TJ(Max)=150°C TC=25°C 120 17 5 2 10 10µs 10.0 80 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 30 40 0.0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 ID (Amps) 800 40 RθJC=4.2°C/W PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON6428 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 100 Power Dissipation (W) TA=25°C IAR (A) Peak Avalanche Current 80 TA=100°C TA=150°C 60 40 30 20 10 TA=125°C 20 0 0 0.000001 0 0.00001 0.0001tA (s) 0.001 Time in avalanche, Figure12:SinglePulseAvalanche capability(Note C) 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F) 10000 50 TA=25°C 40 1000 Power (W) Current rating ID(A) 25 30 20 17 5 2 10 100 10 10 1 0 0 Zθ JA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 150 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON6428 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn