AON7400A 30V N-Channel MOSFET General Description The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is suitable for use as a high side switch in SMPS and general purpose applications. Features VDS 30V ID (at VGS=10V) 40A RDS(ON) (at VGS=10V) < 7.5mΩ RDS(ON) (at VGS = 4.5V) < 10.5mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C A 15 A 12 Avalanche Current C IAS, IAR 27 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 36 mJ Power Dissipation B Junction and Storage Temperature Range 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 25 PD TC=100°C TA=25°C Power Dissipation A 1/6 V 100 IDSM TA=70°C ±20 28 IDM TA=25°C Units V 40 ID TC=100°C Maximum 30 -55 to 150 Typ 30 60 4.2 °C Max 40 75 5 Units °C/W °C/W °C/W www.freescale.net.cn AON7400A 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=250µA, VGS=0V Typ 30 1 TJ=55°C 5 VDS=0V, VGS= ±20V 100 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 On state drain current VGS=10V, VDS=5V 100 VGS=10V, ID=20A 1.97 9.4 11.3 VGS=4.5V, ID=20A 8.4 10.5 mΩ VDS=5V, ID=20A 55 1 V 30 A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance V 7.5 gFS Output Capacitance nA 6.2 Static Drain-Source On-Resistance Reverse Transfer Capacitance 2.5 µA A RDS(ON) Crss Units V VDS=30V, VGS=0V ID(ON) Coss Max VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ S 920 1150 1380 pF 125 180 235 pF 60 105 150 pF 0.55 1.1 1.65 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 nC Qg(4.5V) Total Gate Charge 7.6 9.5 11.4 nC 2 2.7 3.2 nC 5 7 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime 3 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 7 8.7 10.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 11 13.5 16 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6.5 ns 2 ns 17 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7400A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 10V 5V 100 VDS=5V 4.5V 6V 80 60 4V ID(A) ID (A) 80 60 40 40 3.5V 20 20 VGS=3V 0 0 1 2 3 0 4 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 Normalized On-Resistance 1.8 10 RDS(ON) (mΩ ) 25°C 125°C VGS=4.5V 8 6 VGS=10V 4 2 VGS=10V ID=20A 1.6 1.4 17 VGS=4.5V 5 ID=20A 1.2 2 10 1 0.8 0 5 10 15 20 25 30 0 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 25 50 1.0E+02 ID=20A 1.0E+01 20 40 15 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 125°C 1.0E-01 25°C 1.0E-02 10 1.0E-03 5 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7400A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 10 VDS=15V ID=20A 1400 8 Ciss Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 400 2 Coss 200 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 10µs 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10µs RDS(ON) limited 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 160 Power (W) ID (Amps) 100.0 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 5 200 1000.0 Zθ JC Normalized Transient Thermal Resistance Crss 0 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5°C/W 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7400A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 Power Dissipation (W) IAR (A) Peak Avalanche Current TA=25°C TA=150°C TA=100°C TA=125°C 25 20 15 10 5 0 10 1 0 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 50 10000 40 1000 Power (W) Current rating ID(A) TA=25°C 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 0.001 0.1 10 1000 0 18 150 TCASE (°C) Figure 14: Current De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7400A 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn