SEMICONDUCTORS NPN TIP120-121-122 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in power linear and switching applications. PNP complements are TIP125-126-127 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Peak Current IB Base Current @ Tc < 25° PT Power Dissipation @ Ta < 25° TJ Ts Junction Temperature Storage Temperature range 05/10/2012 Value TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 COMSET SEMICONDUCTORS 60 80 100 60 80 100 Unit V V 5 V 5 A 8 A 120 mA 65 Watts 2 150 °C -65 to +150 1|3 SEMICONDUCTORS NPN TIP120-121-122 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-case From junction-case 1.92 °C/W RthJ-amb From junction-ambient 62.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current IE= 0,VCB = VCBOmax ICEO Collector Cutoff Current IE= 0 VCE = 1/2 VCEOmax IEBO Emitter Cutoff Current VEB= 5 V, IC= 0 VCEO Collector-Emitter Breakdown Voltage (*) IC= 30 mA, IB= 0 VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 3 A, IB= 12 mA IC= 5 A, IB= 20 mA VBE(on) Base-Emitter Voltage (*) IC= 3 A, VCE= 3 V VCE= 3.0 V, IC= 0.5 A hFE DC Current Gain (*) VCE= 3.0 V, IC= 3 A COB Output Capacitance IE= 0, VCB = 10 V, ftest= 1MHz TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 Min Typ Max Unit - - 0.2 mA - - 0.5 mA - - 2 mA 60 80 100 - - V - - 2 V - - 4 - - 2.5 1000 - - V 1000 - - - - 200 pF (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 05/10/2012 COMSET SEMICONDUCTORS 2|3 SEMICONDUCTORS NPN TIP120-121-122 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) A B C D E F G H L M N P R S T U Min. Max. 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Pin 1 : Pin 2 : Pin 3 : Case : Base Collector Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 05/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3