DIM200WKS12-A000 IGBT Chopper Module – Upper Arm Control DS5969-3.2 January 2009 (LN26554) FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK) (max) 1200V 2.2 V 200A 400A *(Measured at the power busbars and not the auxiliary terminals) APPLICATIONS High Power Inverters Motor Drives UPS Systems 1(K,E) 2(A) 3(C1) 4(G1) 5(E1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 1200V to 3300V and currents up to 3600A. The DIM200WKS12-A000 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. Fig. 1 Chopper circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM200WKS12-A000 Note: When ordering, please use the whole part number. Outline type code: W (See package details for further information) . Fig. 2 Module outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1 /8 DIM200WKS12-A000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V Max. Units 1200 V ±20 V Continuous collector current Tcase = 80° C 200 A IC(PK) Peak collector current 1ms, Tcase =115° C 400 A Pmax Max. transistor power dissipation Tcase = 25° C, Tj = 150° C 1390 W Diode I t value (IGBT arm) VR = 0, tP = 10ms, Tvj = 125° C 6.25 kA S Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min,50Hz 2500 V 2 2 It Visol 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) Rth(j-c) Al2O3 Copper 24mm 13mm 175 Parameter Thermal resistance – transistor (per arm) Thermal resistance – diode (per arm) Test Conditions Continuous dissipation – Min. Typ. Max. Units - - 90 ° C/kW - - 194 ° C/kW - - 15 ° C/kW junction to case Continuous dissipation – junction to case Rth(c-h) Tj Tstg - Thermal resistance – case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 °C Diode - - 125 °C -40 - 125 °C 3 - 5 Nm 2.5 - 5 Nm Storage temperature range Screw torque Mounting – M6 Electrical connections – M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 2 /8 DIM200WKS12-A000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise. Symbol Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 0.25 mA VGE = 0V, VCE = VCES, Tcase = 125° C - - 6 mA Gate leakage current VGE = ±20V, VCE = 0V - - 1 µA VGE(TH) Gate threshold voltage IC = 10mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 200A - 2.2 2.7 V VGE = 15V, IC = 200A, Tcase = 125° C - 2.6 3.1 V ICES Parameter Collector cut-off current (IGBT and Diode arm) IGES Test Conditions IF Diode forward current DC - - 200 A IFM Diode maximum forward current tp = 1ms - - 400 A VF Diode forward voltage IF = 200A - 2.2 2.5 V IF = 200A, Tcase = 125° C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 33 - nF (IGBT and Diode arm) Cies Input capacitance LM Module inductance per arm - - 20 - nH RINT Internal resistance per arm - - 0.23 - m I1 - 1375 - A I2 - 1125 - A SCData Short circuit. Isc Tj = 125° C, Vcc = 900V, tp 10µs, Vge 15V VCE(max) = VCES - L*.di/dt IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /8 DIM200WKS12-A000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise. Symbol Test Conditions Min. Typ. Max. Units IC = 200A - 600 - ns Fall time VGE = ±15V - 50 - ns EOFF Turn-off energy loss VCE = 600V - 20 - mJ td(on) Turn-on delay time RG(ON) = 4.7 RG(OFF) =4.7 - 240 - ns L 70nH - 95 - ns td(off) tf tr Parameter Turn-off delay time Rise time EON Turn-on energy loss - 25 - mJ Qg Gate charge - 2 - µC Qrr Diode reverse recovery charge IF = 200A, VR = 600V, - 30 - µC Irr Diode reverse current dlF/dt = 2300A/µs - 150 - A - 13 - mJ Test Conditions Min. Typ. Max. Units IC = 200A - 800 - ns Fall time VGE = ±15V - 70 - ns EOFF Turn-off energy loss VCE = 600V - 27 - mJ td(on) Turn-on delay time RG(ON) =4.7 RG(OFF) = 4.7 - 385 - ns L 70nH - 110 - ns - 40 - mJ IF = 200A, VR = 600V, - 50 - µC dlF/dt = 2000A/µs - 160 - A - 20 - mJ EREC Diode reverse recovery energy Tcase = 125° C unless stated otherwise. Symbol td(off) tf tr Parameter Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 4 /8 DIM200WKS12-A000 SEMICONDUCTOR 400 Common emitter Tcase = 125° C 400 350 Vce is measured at power busbars Common emitter Tcase = 25° C and not the auxiliary terminals 350 Vce is measured at power busbars and not the auxiliary terminals 300 Collector current, IC - (A) Collector current, IC - (A) 300 250 200 150 200 150 100 100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 50 0 0 250 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 50 0 0 4.0 Fig.3 Typical output characteristics 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0 Fig.4 Typical output characteristics 45 55 Tc = 125° C, Vcc = 600V, 40 Rg = 4.7 Ohms 50 Tc = 125° C, Vcc = 600V, IC = 200A 45 35 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 40 30 25 20 15 35 30 25 20 15 10 10 Eon Eoff Erec 5 0 0 50 100 150 Collector current, IC - (A) Eon Eoff Erec 5 200 Fig.5 Typical switching energy vs collector current 0 4 10 6 8 Gate resistance, Rg - (Ohms) Fig.6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 12 5 /8 DIM200WKS12-A000 SEMICONDUCTOR 450 400 Module IC Chip IC Tj = 25° C Tj = 125° C VF is measured at power busbars and not the auxiliary terminals 350 400 350 Collector current, IC - (A) Forward current, IF - (A) 300 250 200 150 300 250 200 150 100 100 50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 50 Tcase = 125° C Vge = 15V Rg = 4.7 Ohms 0 0 200 400 600 800 1000 1200 Collector emitter voltage, Vce - (V) 4.0 Forward voltage, VF - (V) Fig.7 Diode typical forward characteristics 1400 Fig.8 Reverse bias safe operating area 1000 300 Transient thermal impedance, Zth (j-c) - (° C/kW ) Tcase =125° C Reverse recovery current, Irr - (A) 250 200 150 100 50 Diode Transistor 100 10 IGBT Diode 0 0 200 400 600 800 1000 1200 Reverse voltage, VR - (V) Fig.9 Diode reverse bias safe operating area 1400 1 0.001 Ri (°C/KW) ti (ms) Ri (°C/KW) ti (ms) 0.01 2 11.62 3.14 25.28 3.21 0.1 Pulse width, tp - (s) 3 43.85 45.60 74.24 38.58 4 29.53 143.02 90.03 113.97 10 1 Fig.10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1 2.10 0.11 4.49 0.10 6 /8 DIM200WKS12-A000 SEMICONDUCTOR PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 1(K,E) 2(A) 3(C1) 4(G1) 5(E1) Nominal weight: 420g Module outline type code: W Fig.11 Package details Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /8 DIM200WKS12-A000 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 8 /8