Yellow LED Chip OPA5816 GaAsP/GaP 1. Material Substrate GaP (N Type) Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage Typ Unit Condition V IF=1mA V IF=20mA V IR=10uA 200 mcd IF=20mA 588 nm IF=20mA VF(1) 1.7 VF(2) 2.15 Reverse Voltage VR 8 Brightness Iv λd 140 Wavelength Max 2.3 ∆λ 40 nm IF=20mA ※ Note : Brightness is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height ----------------------------------------------------------------------------------------------------- (b) 10mil x 10mil 11mil x 11mil 115um 11mil 10.6mil (d) (e) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi (a) P Epi (c) Substrate 4. Mechanical Data (a) Emission Area N Side Electrode