KODENSHI OPA5816

Yellow LED Chip
OPA5816
GaAsP/GaP
1. Material
Substrate
GaP (N Type)
Epitaxial Layer GaAsP (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical
Characteristics
Parameter
Symbol Min
Forward Voltage
Typ
Unit
Condition
V
IF=1mA
V
IF=20mA
V
IR=10uA
200
mcd
IF=20mA
588
nm
IF=20mA
VF(1)
1.7
VF(2)
2.15
Reverse Voltage
VR
8
Brightness
Iv
λd
140
Wavelength
Max
2.3
∆λ
40
nm
IF=20mA
※ Note : Brightness is measured by Sorter E/T system with bare chip.
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
-----------------------------------------------------------------------------------------------------
(b)
10mil x 10mil
11mil x 11mil
115um
11mil
10.6mil
(d)
(e)
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr
N Epi
(a)
P Epi
(c)
Substrate
4. Mechanical Data (a) Emission Area
N Side Electrode