OPA8312HP Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs (N Type) Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage Min Typ Unit Condition V IF=10uA V IF=50mA V IR=10uA 16 mW IF=50mA 830 nm IF=50mA VF(1) 1.1 VF(2) 1.6 Reverse Voltage VR 5 Power PO 13 λP Wavelength Max 2 ∆λ 45 nm IF=50mA ※ Note : Power is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 11.6mil x 11.6mil --------------------- 12.6mil x 12.6mil --------------------130um --------------------7mil --------------------5.7mil (b) (d) (e) (a) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr P Epi (c) N Epi 4. Mechanical Data (a) Emission Area N Side Electrode