OPA5723YGO Yellow Green LED Chip Ultra Bright GaAs/AlGaInP 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaInP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Current IR Brightness Iv 20 λd Wavelength Typ Max Unit Condition 2.2 2.4 V IF=20mA 100 uA VR=5V 35 mcd IF=20mA 574 nm IF=20mA ∆λ 20 nm IF=20mA ※ Note : Luminous Intensity is measured on bare chips. 4. Mechanical Data (a) Emission Area -------------------------- 8mil x (b) Bottom Area -------------------------- 9mil x (c) Bonding Pad -------------------------- 100um (d) Chip Thickness -------------------------- 7.0mil (b) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 AlGaInP Epi (a) Substrate (d) (c) www.auk.co.kr 8mil 9mil N Side Electrode