NUP2301MW6T1G, SZNUP2301MW6T1G Low Capacitance Diode Array for ESD Protection in Two Data Lines http://onsemi.com NUP2301MW6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features SC−88 CASE 419B STYLE 23 Low Capacitance (2.0 pf Maximum Between I/O Lines) Single Package Integration Design Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device* PIN CONFIGURATION AND SCHEMATIC VN 1 6 N/C I/O 2 5 I/O VP 3 4 N/C MARKING DIAGRAM 6 68 M Applications T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection 1 68 = Specific Device Code M = Date Code ORDERING INFORMATION Package Shipping† NUP2301MW6T1G SC−88 (Pb−Free) 3,000 / Tape & Reel SZNUP2301MW6T1G SC−88 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 5 1 Publication Order Number: NUP2301MW6T1/D NUP2301MW6T1G, SZNUP2301MW6T1G MAXIMUM RATINGS (Each Diode) (TJ = 25C unless otherwise noted) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol Value Unit VR 70 Vdc IF 200 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (Averaged over any 20 ms Period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S IFSM A 2.0 1.0 0.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient Lead Solder Temperature Maximum 10 Seconds Duration Symbol Max Unit RqJA 625 C/W TL C 260 Junction Temperature TJ −55 to +150 C Storage Temperature Tstg −55 to +150 C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Each Diode) Characteristic Symbol Min Typ Max 70 − − − − − − − − 2.5 30 50 − 1.0 2.0 − 1.6 3 − − − − − − − − 715 855 1000 1250 Unit OFF CHARACTERISTICS V(BR) Reverse Breakdown Voltage (I(BR) = 100 mA) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) IR Capacitance (between I/O pins) (VR = 0 V, f = 1.0 MHz) CD Capacitance (between I/O pin and ground) (VR = 0 V, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF 2. FR−5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Include SZ-prefix devices where applicable. http://onsemi.com 2 Vdc mAdc pF pF mVdc NUP2301MW6T1G, SZNUP2301MW6T1G IF, FORWARD CURRENT (mA) 100 TA = 85C 10 TA = -40C 1.0 TA = 25C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (V) 1.2 Figure 1. Forward Voltage 10 IR, REVERSE CURRENT (mA) TA = 150C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.001 0 10 20 30 40 VR, REVERSE VOLTAGE (V) 50 Figure 2. Leakage Current CD, DIODE CAPACITANCE (pF) 1.75 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (V) Figure 3. Capacitance http://onsemi.com 3 8 NUP2301MW6T1G, SZNUP2301MW6T1G PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. 4 HE −E− 1 2 DIM A A1 A3 b C D E e L HE 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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