Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 000 mJ PD 100 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Power dissipation Ta = 25°C 0.7±0.1 5.45±0.3 1 2 Note) *: L = 0.8 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C 3 1: Gate 2: Drain 3: Source TOP-3E-A1 Package D G S ■ Electrical Characteristics TC = 25°C ± 3°C Symbol 5.5±0.3 5˚ Internal Connection 3 Parameter 5˚ 1.1±0.1 (2.0) Avalanche energy capability * (4.0) 2.0±0.2 5˚ 10.9±0.5 3.3±0.3 Gate-source surrender voltage 5˚ 18.6±0.5 (2.0) Solder Dip ■ Absolute Maximum Ratings TC = 25°C 3.0±0.3 5˚ (23.4) (2.0) • Low on-resistance, low Qg • High avalanche resistance (1.2) 26.5±0.5 ■ Features (4.5) (10.0) 5˚ 22.0±0.5 15.5±0.5 Conditions Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 Diode forward voltage VDSF IDR = 50 A, VGS = 0 Gate threshold voltage Vth VDS = 25 V, ID = 10 mA Drain-source cutoff current IDSS VDS = 160 V, VGS = 0 Gate-source cutoff currentt IGSS VGS = ±30 V, VDS = 0 Drain-source on resistance RDS(on) VGS = 10 V, ID = 25 A Forward transfer admittance Yfs VDS = 25 V, ID = 25 A Min Typ Max 200 V −1.5 2 29 V 4 V 100 µA ±1 µA 40 mΩ 30 S 4 550 pF Coss 750 pF Reverse transfer capacitance (Common-source) Crss 75 pF Turn-on delay time td(on) VDD = 100 V, ID = 25 A 50 ns RL = 4 Ω, VGS = 10 V 125 ns 390 ns Short-circuit forward transfer capacitance (Common-source) Ciss Short-circuit output capacitance (Common-source) Rise time Turn-off delay time tr VDS = 25 V, VGS = 0, f = 1 MHz td(off) 15 Unit Fall time tf 140 ns Reverse recovery time trr L = 230 µH, VDD = 100 V 210 ns Reverse recovery charge Qrr IDR = 25 A, di /dt = 100 A/ µs 820 nC Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2004 SJG00035AED 1 2SK3637 ■ Electrical Characteristics (Continued) TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Qg VDD = 100 V, ID = 25 A 85 nC Gate-source charge Qgs VGS = 10 V 30 nC Gate-drain charge Qgd 12 nC Total gate charge Channel-case heat resistance Rth(ch-c) 1.25 °C/W Channel-atmosphere heat resistance Rth(ch-a) 41.6 °C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area 103 Non repetitive pulse TC = 25°C IDP t = 100 µs Drain current ID (A) 102 ID DC 10 1 ms 10 ms 1 10−1 100 ms 1 10 102 103 Drain-source voltage VDS (V) 2 SJG00035AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. 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