PD - 96364B
AUTOMOTIVE MOSFET
AUIRF7319Q
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Planar Technology
Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Automotive [Q101] Qualified*
Lead-Free, RoHS Compliant
S1
N-CHANNEL MOSFET
1
8
N-Ch
P-Ch
-30V
D1
G1
2
7
D1
V(BR)DSS
30V
S2
3
6
D2
RDS(on) typ.
0.023Ω 0.042Ω
G2
4
5
D2
max. 0.029Ω 0.058Ω
P-CHANNEL MOSFET
Top View
ID
6.5A
-4.9A
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
SO-8
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c
Pulsed Drain Current
Continuous Source Current( diode Conduction)
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
g
g
e
d
Max.
Units
N-Channel
P-Channel
30
6.5
5.2
30
2.5
-30
-4.9
-3.9
-30
-2.5
2.0
1.3
82
4.0
A
W
140
-2.8
0.20
± 20
5.0
V
-5.0
-55 to + 150
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
RθJA
Junction-to-Ambient
g
Parameter
Typ.
Max.
Units
–––
62.5
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/24/11
AUIRF7319Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(on)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ. Max. Units
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.022
0.022
0.023
0.032
0.042
0.076
–––
–––
14
7.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.029
0.046
0.058
0.098
3.0
-3.0
–––
–––
1.0
-1.0
25
-25
± 100
V
V/°C
Ω
V
S
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS = 0V, ID = -250μA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.7A
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -3.6A
VDS = VGS, ID = 250μA
VDS = VGS, ID = -250μA
VDS = 15V, ID = 5.8A
VDS = -15V, ID = -4.9A
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
VDS = -24V, VGS = 0V, TJ = 55°C
VGS = ± 20V
f
f
f
f
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
22
23
2.6
3.8
6.4
5.9
8.1
13
8.9
13
26
34
17
32
33
34
3.9
5.7
9.6
8.9
12
19
13
20
39
51
26
48
650
710
–––
–––
320
380
130
–––
–––
–––
180
–––
Conditions
N-Channel
ID = 5.8A VDS = 15V, VGS =10V
nC
f
P-Channel
ID = -4.9A VDS = -15V, VGS =-10V
ns
N-Channel
VDD = 15V, ID=1.0A, RG = 6.0Ω
RD = 15Ω
P-Channel
VDD = -15V, ID=-1.0A, RG = 6.0Ω
RD = 15Ω
f
N-Channel
VGS = 0V, VDS = 25V, f =1.0Mhz
pF
P-Channel
VGS = 0V, VDS = -25V, f =1.0Mhz
Diode Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.78
-0.78
45
44
58
42
2.5
-2.5
30
-30
1.0
-1.0
68
66
87
63
Conditions
A
V
ns
nC
e
e
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IS = -1.7A, VGS = 0V
N-Channel
TJ = 25°C, IF = 1.7A di/dt = 100A/μs
P-Channel
TJ = 25°C, IF = -1.7A di/dt = 100A/μs
f
Notes through
are on page 11
2
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AUIRF7319Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
ESD
RoHS Compliant
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
SO-8
MSL1
Machine Model
Class M2(+/- 200V )
(per AEC-Q101-002)
Human Body Model
Class H1A(+/- 500V )
(per AEC-Q101-001)
Charged Device
Model
Class C5(+/- 2000V )
(per AEC-Q101-005)
†††
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
†††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRF7319Q
100
N-Channel
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
10
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
3.0V
20μs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
V DS , Drain-to-Source Voltage (V)
1
10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
10
VDS = 10V
20μs PULSE WIDTH
1
3.0
3.5
4.0
4.5
A
5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
A
1.6
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
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AUIRF7319Q
N-Channel
ID = 5.8A
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
0.040
0.032
0.028
0.024
0
0.08
0.06
I D = 5.8A
0.04
0.02
0.00
12
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
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15
A
E AS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.10
9
20
30
40
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.12
6
10
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
3
V GS = 10V
0.020
80 100 120 140 160
TJ , Junction Temperature ( °C)
0
V GS = 4.5V
0.036
200
IDID
TOP
BOTTOM
160
1.8A
3.2A
4.0A
120
80
40
0
25
50
75
100
125
A
150
Starting T J , Junction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
5
AUIRF7319Q
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
900
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1200
N-Channel
Ciss
Coss
600
Crss
300
0
1
10
100
VDS = 15V
16
12
8
4
0
A
ID = 5.8A
0
10
20
30
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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AUIRF7319Q
P-Channel
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
TOP
10
-3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20μs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
100
-ISD , Reverse Drain Current (A)
100
-I D , Drain-to-Source Current (A)
10
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
TJ = 25°C
TJ = 150°C
10
V DS = -10V
20μs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
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1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
6.0
A
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
A
1.4
-VSD , Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode
Forward Voltage
7
AUIRF7319Q
RDS(on) , Drain-to-Source On Resistance ( Ω )
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
P-Channel
ID =-4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS =-10V
0
20
40
60
80 100 120 140 160
0.4
0.3
V GS = -4.5V
0.2
0.1
VGS = -10V
0
10
20
300
0.12
I D = -4.9A
0.04
0.00
0
3
6
9
12
-V GS , Gate -to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
15
A
EAS , Single Pulse Avalanche Energy (mJ)
0.16
0.08
30
-I D , Drain Current (A)
A
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 16. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to-Source On Resistance ( Ω )
0.5
0.0
TJ , Junction Temperature ( ° C)
8
0.6
ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
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AUIRF7319Q
P-Channel
VGS = 0V
f = 1 MHz
Ciss = Cgs + Cgd + Cds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
1200
C, Capacitance (pF)
20
-VGS , Gate-to-Source Voltage (V)
1400
1000
Ciss
800
Coss
600
400
Crss
200
0
1
10
100
VDS =-15V
16
12
8
4
0
A
ID = -4.9A
0
10
- V DS , Drain-to-Source Voltage (V)
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
20
30
40
QG , Total Gate Charge (nC)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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9
AUIRF7319Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
0.25 [.010]
A
A1
MILLIMETERS
MAX
A
5
INCHES
MIN
MAX
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
C A B
8X L
8X c
7
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF7319Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 )
N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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11
AUIRF7319Q
Ordering Information
12
Base part
Package Type
AUIRF7319Q
SO-8
Standard Pack
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
4000
AUIRF7319Q
AUIRF7319QTR
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AUIRF7319Q
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
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