AUTOMOTIVE GRADE PD - 97647 AUIRF9952Q HEXFET® Power MOSFET Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-CH P-CH D1 V(BR)DSS 30V -30V RDS(on) max. 0.10Ω 0.25Ω ID 3.5A -2.3A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. SO-8 AUIRF9952Q Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Max. Parameter N-Channel Units P-Channel ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V 3.5 -2.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.8 -1.8 IDM Pulsed Drain Current 16 PD @TA = 25°C Power Dissipation PD @TA = 70°C VGS Power Dissipation Linear Derating Factor Gate-to-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR dv/dt c -10 2.0 c Repetitive Avalanche Energy c Peak Diode Recovery dv/dt d TJ Operating Junction and TSTG Storage Temperature Range W 1.3 0.016 ± 20 e A W/°C V 44 57 mJ 2.0 -1.3 A -5.0 V/ns 0.25 mJ 5.0 -55 to + 150 °C Thermal Resistance Parameter RθJA g Junction-to-Ambient (PCB Mount, steady state) Typ. ––– Max. Units 62.5 °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 04/25/11 AUIRF9952Q Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter N-Ch V(BR)DSS Drain-to-Source Breakdown Voltage P-Ch N-Ch ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient P-Ch N-Ch RDS(on) Static Drain-to-Source On-Resistance P-Ch VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P Min. 30 -30 ––– ––– ––– ––– ––– ––– 1.0 -1.0 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– 0.015 0.015 0.08 0.12 0.165 0.290 ––– ––– 12 2.4 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V V GS = 0V, ID = 250μA ––– V GS = 0V, ID =-250μA ––– V/°C Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA ––– V GS = 10V, ID = 2.2A 0.10 0.15 Ω V GS = 4.5V, ID = 1.0A V GS = -10V, ID = -1.0A 0.250 0.400 V GS = -4.5V, ID = -0.5A 3.0 V V DS = VGS, ID = 250μA V DS = VGS, ID = -250μA -3.0 ––– S V DS = 15V, ID = 3.5A V DS = -15V, ID = -2.3A ––– V DS = 24V, VGS = 0V 2.0 -2.0 μA V DS = -24V, VGS = 0V V DS = 24V, VGS = 0V, TJ = 125°C 25 V DS = -24V, VGS = 0V, TJ = 125°C -25 -100 V GS = 20V nA V GS = -20V 100 f f f f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. ––– ––– Typ. 6.9 6.1 Max. Units Conditions 14 N-Channel ID = 1.8A, VDS = 10V, VGS = 10V 12 nC 2.0 3.4 P-Channel 3.5 ID =-2.3A, VDS =-10V, VGS =-10V ––– ––– ––– 1.0 1.7 1.8 ––– ––– ––– ––– 1.1 6.2 9.7 8.8 2.2 12 19 18 ––– ––– ––– ––– 14 13 20 3.0 28 26 40 6.0 ––– ––– ––– 6.9 190 190 14 ––– ––– ––– ––– ––– 120 110 61 ––– ––– ––– ––– 54 ––– f N-Channel VDD= 10V, ID = 1.0A RG = 6.0Ω RD = 10Ω ns P-Channel VDD=-10V, ID =-1.0A RG = 6.0Ω RD = 10Ω N-Channel V GS = 0V, VDS = 15V, ƒ = 1.0MHz pF P-Channel V GS = 0V, VDS = -15V, ƒ = 1.0MHz f Diode Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Min. Typ. N-Ch ––– ––– Max. Units 1.7 P-Ch ––– ––– -1.3 N-Ch ––– ––– 16 P-Ch ––– ––– 16 Conditions A e e V TJ = 25°C, IS = 1.25A, VGS = 0V N-Ch ––– 0.82 1.2 TJ = 25°C, IS = -1.25A, VGS = 0V P-Ch ––– -0.82 -1.2 N-Ch ––– 27 53 ns N-Channel TJ = 25°C,IF =1.25A, di/dt = 100A/μs 27 54 P-Ch ––– N-Ch ––– 28 57 nC P-Channel TJ = 25°C,IF =-1.25A, di/dt = 100A/μs 31 62 P-Ch ––– N-P Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f Notes: Repetitive rating; pulse width limited by N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. max. junction temperature. ( See fig. 23 ) (See Figure 12) N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A. TJ ≤ 150°C. Pulse width ≤ 300µs; duty cycle ≤ 2%. P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, Surface mounted on FR-4 board, t ≤ 10sec. TJ ≤ 150°C. www.irf.com 2 AUIRF9952Q Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 ††† ††† Class Q1(N) = M1A (+/- 50V) , Q2(P) = M1A (+/- 50V) AEC-Q101-002 ††† ††† Class Q1(N) = H0 (+/- 150V) , Q2(P) = H0 (+/- 150V) AEC-Q101-001 ††† ††† Class Q1(N) = C4 (+/- 1000V) , Q2(P) = C4 (+/- 1000V) AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 AUIRF9952Q 100 N-Channel 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20μs PULSE WIDTH TJ = 25°C A 1 0.1 1 10 3.0V 20μs PULSE WIDTH TJ = 150°C A 1 10 0.1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 Fig 2. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) TJ = 25°C 10 TJ = 150°C V DS = 10V 20μs PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 6.0 10 TJ = 150°C TJ = 25°C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 A 1.4 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 4 AUIRF9952Q RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS (on) , Drain-to-Source On Resistance (Ω) N-Channel ID = 2.2A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.12 0.10 0.08 0 TJ , Junction Temperature ( °C) E AS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance (Ω) 0.14 0.12 0.10 I D = 3.5A 0.06 0.04 0.02 0.00 6 9 12 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage www.irf.com 4 6 8 10 12 A Fig 6. Typical On-Resistance Vs. Drain Current 0.16 3 2 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 0 VGS = 10V 0.06 0.04 80 100 120 140 160 0.08 VGS = 4.5V 15 A 100 TOP BOTTOM 80 ID 0.89A 1.6A 2.0A 60 40 20 A 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 5 AUIRF9952Q 350 20 250 Ciss 200 Coss VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 300 C, Capacitance (pF) N-Channel 150 Crss 100 50 0 1 10 100 A ID = 1.8A VDS = 10V 16 12 8 4 0 0 2 4 6 8 10 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 6 AUIRF9952Q P-Channel 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 1 -3.0V 20μs PULSE WIDTH TJ = 25°C A 0.1 0.1 1 10 1 -3.0V 20μs PULSE WIDTH TJ = 150°C A 0.1 10 0.1 -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics 10 Fig 13. Typical Output Characteristics 100 100 -ISD , Reverse Drain Current (A) -ID , Drain-to-Source Current (A) 1 -VDS , Drain-to-Source Voltage (V) 10 TJ = 25°C T J = 150°C 1 VDS = -10V 20μs PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 7.0 8.0 -VGS , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics www.irf.com A 10 TJ = 150°C TJ = 25°C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 -VSD , Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage A 1.4 7 AUIRF9952Q RDS(on) , Drain-to-Source On Resistance ( Ω ) R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 P-Channel ID = -1.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 2.5 2.0 1.5 VGS = -4.5V 1.0 0.5 VGS = -10V 0.0 80 100 120 140 160 0.0 TJ , Junction Temperature ( °C) 2.0 3.0 150 I D = -2.3A 0.20 0.00 3 6 9 12 -V GS , Gate-to-Source Voltage (V) Fig 18. Typical On-Resistance Vs. Gate Voltage www.irf.com 15 A EAS , Single Pulse Avalanche Energy (mJ) 0.60 0 5.0 A Fig 17. Typical On-Resistance Vs. Drain Current 0.80 0.40 4.0 -I D , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature RDS(on) , Drain-to-Source On Resistance ( Ω ) 1.0 ID -0.58A -1.0A BOTTOM -1.3A TOP 120 90 60 30 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 19. Maximum Avalanche Energy Vs. Drain Current 8 AUIRF9952Q P-Channel 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 400 300 Ciss Coss 200 Crss 100 0 1 10 100 A ID = -2.3A VDS =-10V 16 12 8 4 0 0 2 4 6 8 10 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 9 AUIRF9952Q SO-8 Package Outline Dimensions are shown in millimeters (inches) ' ',0 % $ $ + >@ ( ;E >@ $ $ 0,//,0(7(56 0,1 0$; $ E F ' ( H %$6,& %$6,& H + %$6,& %$6,& . / \ $ ; H H ,1&+(6 0,1 0$; .[ & \ >@ & $ % 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;/ ;F )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 10 AUIRF9952Q SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. www.irf.com 11 AUIRF9952Q Ordering Information Base part number AUIRF9952Q www.irf.com Package Type Standard Pack SO-8 Form Tube Tape and Reel Complete Part Number Quantity 95 4000 AUIRF9952Q AUIRF9952QTR 12 AUIRF9952Q IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IRs Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13