〈SMALL-SIGNAL TRANSISTOR〉 ISC3242AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ ISC3242AS1 is a silicon NPN epitaxial type transistor 4.0 designed for small type motor drive, solenoid drive and power 3.0 7.5MAX supply application. 0.1 IC=2A 14.0 ●High collector current. ●Low VCE(sat). 13.0MIN FEATURE 1.0 1.0 Complementary with 2SA1998. 0.45 VCE(sat)=0.17V typ (@IC=1A) 2.5 2.5 ●High hFE hFE=150 to 800 2.5 0.4 ●High collector dissipation. PC=600mW ① ② ③ APPLICATION Small type motor drive, power supply for VCR, deck, player. JEITA： JEDEC： TERMINAL CONNECTER ①：EMITTER MAXIMUM RATINGS（Ta=25℃） Symbol . VCBO VEBO VCEO IC ICM Pc Tj Tstg ②：COLLECTOR Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak collector current Collector dissipation Junction temperature Storage temperature Ratings Unit 20 6 20(16)※1 2 3 600 +150 -55～+150 V V V A A mW ℃ ℃ ③：BASE ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Parameter Limits Test conditions Min Typ Max Unit V(BR)CBO C to B break down voltage IC= 10μA , IE =0mA 20 - - V V(BR)EBO E to B break down voltage IE= 10μA , IC =0mA 6 - - V V(BR)CEO C to E break down voltage IC=2mA , RBE= ∞ 20(16) ※1 - - V ICBO Collector cut off current V CB - - 0.2 μA IEBO Emitter cut off current V EB= 4V , I C= 0mA - - 0.2 μA hFE※2 DC forward current gain V CE 150 - 800 - VCE(sat) fT Cob = 16V , I E= 0mA = 4V , IC=100mA C to E Saturation Voltage I C= 1A , I B=50mA - 0.17 0.3 V Gain band width product V CE=2V , I E= -10mA - 80 - MHz Collector output capacitance V CB - 28 - pF = 10V , I E= 0mA,f=1MHz ※1：( ) shows value of item G . ※2：It shows hFE classification in right table. Item E F G hFE item 150～300 250～500 400～800 ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISC3242AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE TYPICAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 800 600 400 Pc = 0. 6W COLLECTOR DISSIPATION Pc(mW) 1000 200 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(℃) ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISC3242AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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