ISAHAYA ISC3242AS1

〈SMALL-SIGNAL TRANSISTOR〉
ISC3242AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
ISC3242AS1 is a silicon NPN epitaxial type transistor
4.0
designed for small type motor drive, solenoid drive and power
3.0
7.5MAX
supply application.
0.1
IC=2A
14.0
●High collector current.
●Low VCE(sat).
13.0MIN
FEATURE
1.0
1.0
Complementary with 2SA1998.
0.45
VCE(sat)=0.17V typ (@IC=1A)
2.5
2.5
●High hFE hFE=150 to 800
2.5
0.4
●High collector dissipation. PC=600mW
①
②
③
APPLICATION
Small type motor drive, power supply for VCR, deck, player.
JEITA:
JEDEC:
TERMINAL CONNECTER
①:EMITTER
MAXIMUM RATINGS(Ta=25℃)
Symbol
.
VCBO
VEBO
VCEO
IC
ICM
Pc
Tj
Tstg
②:COLLECTOR
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
20
6
20(16)※1
2
3
600
+150
-55~+150
V
V
V
A
A
mW
℃
℃
③:BASE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Parameter
Limits
Test conditions
Min
Typ
Max
Unit
V(BR)CBO
C to B break down voltage
IC= 10μA , IE =0mA
20
-
-
V
V(BR)EBO
E to B break down voltage
IE= 10μA , IC =0mA
6
-
-
V
V(BR)CEO
C to E break down voltage
IC=2mA , RBE= ∞
20(16) ※1
-
-
V
ICBO
Collector cut off current
V
CB
-
-
0.2
μA
IEBO
Emitter cut off current
V
EB= 4V , I C= 0mA
-
-
0.2
μA
hFE※2
DC forward current gain
V
CE
150
-
800
-
VCE(sat)
fT
Cob
= 16V , I E= 0mA
= 4V , IC=100mA
C to E Saturation Voltage
I C= 1A , I B=50mA
-
0.17
0.3
V
Gain band width product
V
CE=2V , I E= -10mA
-
80
-
MHz
Collector output capacitance
V
CB
-
28
-
pF
= 10V , I E= 0mA,f=1MHz
※1:( ) shows value of item G .
※2:It shows hFE classification in right table.
Item
E
F
G
hFE item
150~300
250~500
400~800
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
ISC3242AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
800
600
400
Pc
=
0.
6W
COLLECTOR DISSIPATION Pc(mW)
1000
200
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(℃)
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
ISC3242AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2012